Fairchild/ON Semiconductor FQD6N50CTM

Name: FQD6N50CTM
Brand: Fairchild/ON Semiconductor
SKU: 3586390-FQD6N50CTM
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQD6N50CTM

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3586390-FQD6N50CTM

Description:: MOSFET N-CH 500V 4.5A DPAK

ECAD Model:

Datasheet:: FQD6N50CTM

Specifications

Fairchild/ON Semiconductor FQD6N50CTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD6N50CTM.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
4.5A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
2.5W Ta 61W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.2 Ω @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.5A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
35ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
4.5A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQD6N50CTM Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.

FQD6N50CTM Features
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 55 ns

FQD6N50CTM Applications
There are a lot of ON Semiconductor
FQD6N50CTM applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

FQD6N50CTM More Descriptions

N-Channel Power MOSFET, QFET®, 500 V, 4.5 A, 1.2 Ω, DPAK
Transistor,mosfet,n-Channel,500V V(Br)Dss,4.5A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FQD6N50CTM
N-Channel 500 V 1.2 Ohm Surface Mount SuperMESH MosFet - TO-252-3
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..

Product Comparison

The three parts on the right have similar specifications to FQD6N50CTM.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Resistance

Threshold Voltage

JEDEC-95 Code

Height

Length

Width

REACH SVHC

View Compare
FQD6N50CTM

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

GULL WING

4.5A

R-PSSO-G2

1

2.5W Ta 61W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

10 ns

N-Channel

SWITCHING

1.2 Ω @ 2.25A, 10V

4V @ 250μA

700pF @ 25V

4.5A Tc

25nC @ 10V

35ns

10V

±30V

45 ns

55 ns

4.5A

30V

500V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQD6N60CTM

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

e3

yes

Obsolete

1 (Unlimited)

2

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

80W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

2 Ω @ 2A, 10V

4V @ 250μA

810pF @ 25V

4A Tc

20nC @ 10V

-

10V

±30V

-

-

-

-

-

-

ROHS3 Compliant

-

YES

FAST SWITCHING

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

600V

4A

2Ohm

16A

600V

300 mJ

-

-

-

-

-

-

-

FQD6N50CTM vs FQD6N60CTM
FQD6N50CTF

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

e3

yes

Obsolete

1 (Unlimited)

2

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

2.5W Ta 61W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

1.2 Ω @ 2.25A, 10V

4V @ 250μA

700pF @ 25V

4.5A Tc

25nC @ 10V

-

10V

±30V

-

-

-

-

-

-

ROHS3 Compliant

-

YES

-

SINGLE

260

unknown

NOT SPECIFIED

3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

500V

4.5A

-

18A

500V

300 mJ

-

-

-

-

-

-

-

FQD6N50CTM vs FQD6N50CTF
FQD6N40CTM

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

4 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

FET General Purpose Power

400V

MOSFET (Metal Oxide)

GULL WING

4.5A

R-PSSO-G2

1

2.5W Ta 48W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

13 ns

N-Channel

SWITCHING

1 Ω @ 2.25A, 10V

4V @ 250μA

625pF @ 25V

4.5A Tc

20nC @ 10V

65ns

10V

±30V

38 ns

21 ns

4.5A

30V

400V

No

ROHS3 Compliant

Lead Free

-

FAST SWITCHING

-

-

-

-

-

-

-

-

-

-

-

-

270 mJ

1Ohm

2V

TO-252AA

2.3mm

6.6mm

6.1mm

No SVHC

FQD6N50CTM vs FQD6N40CTM

Certification

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FQD6N50CTM Specification

Part Number	Manufacturers	Description	Stock	Price
FQD6N50CTM DISTI #V72:2272_06301264	ON Semiconductor	Trans MOSFET N-CH 500V 4.5A 3-Pin(2 Tab) DPAK T/R	2375	1 $1.0357 10 $0.8794 25 $0.7196 100 $0.6165 250 $0.5548 500 $0.5387 1000 $0.4217
FQD6N50CTM DISTI #V36:1790_06301264	ON Semiconductor	Trans MOSFET N-CH 500V 4.5A 3-Pin(2 Tab) DPAK T/R	0	2500 $0.4226 25000 $0.4171 250000 $0.3836 1250000 $0.364 2500000 $0.3638
FQD6N50CTM DISTI #FQD6N50CTMCT-ND	ON Semiconductor	MOSFET N-CH 500V 4.5A DPAK RoHS: Compliant	1768	1 $1.03 10 $0.917 100 $0.7152 500 $0.59078 1000 $0.4664
FQD6N50CTM DISTI #FQD6N50CTMDKR-ND	ON Semiconductor	MOSFET N-CH 500V 4.5A DPAK RoHS: Compliant	1768	1 $1.03 10 $0.917 100 $0.7152 500 $0.59078 1000 $0.4664
FQD6N50CTM_F080 DISTI #FQD6N50CTM_F080-ND	ON Semiconductor	MOSFET N-CH 500V 4.5A DPAK RoHS: Compliant	0
FQD6N50CTM DISTI #FQD6N50CTMTR-ND	ON Semiconductor	MOSFET N-CH 500V 4.5A DPAK RoHS: Compliant	0	2500 $0.42262 5000 $0.40149 12500 $0.3864 25000 $0.38238
FQD6N50CTM DISTI #25743583	ON Semiconductor	Trans MOSFET N-CH 500V 4.5A 3-Pin(2 Tab) DPAK T/R	2375	17 $1.0357
FQD6N50CTM DISTI #FQD6N50CTM	ON Semiconductor	Trans MOSFET N-CH 500V 4.5A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	2500 $0.6209 5000 $0.4829 10000 $0.4009 15000 $0.3379 25000 $0.3129
FQD6N50CTM DISTI #FQD6N50CTM	ON Semiconductor	Trans MOSFET N-CH 500V 4.5A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	625 $0.5219 1250 $0.5189 1875 $0.5119 3125 $0.5059 6250 $0.4929
FQD6N50CTM DISTI #FQD6N50CTM	ON Semiconductor	Trans MOSFET N-CH 500V 4.5A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	2500 $0.3366 5000 $0.33442 10000 $0.33013 15000 $0.32595 25000 $0.3179
FQD6N50CTM DISTI #60J0817	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D	0	1 $0.406 2500 $0.403 10000 $0.389 25000 $0.377
FQD6N50CTM DISTI #512-FQD6N50CTM	ON Semiconductor	MOSFET 500V N-Channel Adv Q-FET C-Series RoHS: Compliant	1887	1 $0.95 10 $0.805 100 $0.619 500 $0.547 1000 $0.432 2500 $0.383 10000 $0.369
FQD6N50CTM DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 4.5A I(D), 500V, 1. RoHS: Compliant	123182	1 $0.57 25 $0.53 100 $0.51 500 $0.49 1000 $0.46
FQD6N50CTM DISTI #XSKDRABV0030455		RoHS: Compliant	30000	2500 $0.4714 30000 $0.44

FQD6N50~~(5)~~
FQD6N5~~(5)~~
FQD6N~~(27)~~
FQD6~~(33)~~
FQD~~(60)~~

Fairchild/ON Semiconductor FQD6N50CTM

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