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FQD2N100TM

Fairchild/ON Semiconductor FQD2N100TM

Part Number:
FQD2N100TM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478346-FQD2N100TM
Description:
MOSFET N-CH 1000V 1.6A DPAK
ECAD Model:
Datasheet:
FQD2N100TM

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  • FQD2N100TM Detail Images
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  • FQD2N100TM Detail Images
Specifications
Fairchild/ON Semiconductor FQD2N100TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD2N100TM.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    QFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    9Ohm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    900V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    1.6A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 50W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9 Ω @ 800mA, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    520pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    15.5nC @ 10V
  • Rise Time
    30ns
  • Drain to Source Voltage (Vdss)
    1000V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    1.6A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    1kV
  • Pulsed Drain Current-Max (IDM)
    6.4A
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    5 V
  • Height
    2.517mm
  • Length
    6.6mm
  • Width
    6.1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQD2N100TM Description
The FQD2N100TM is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. The advanced MOSFET FQD2N100TM has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This FQD2N100TM is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQD2N100TM Features
1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A
Low gate charge ( Typ. 12nC)
Low Crss ( Typ. 5pF)
100% avalanche tested
RoHS Compliant

FQD2N100TM Applications
Switched mode power supplies
Active power factor correction (PFC)
Electronic lamp ballasts
Lighting
FQD2N100TM More Descriptions
N-Channel Power MOSFET, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK
MOSFET N-CH 1000V 1.6A DPAK / Trans MOSFET N-CH 1KV 1.6A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FQD2N100TM.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Terminal Finish
    Voltage
    Current
    View Compare
  • FQD2N100TM
    FQD2N100TM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    9Ohm
    FET General Purpose Power
    900V
    MOSFET (Metal Oxide)
    GULL WING
    1.6A
    R-PSSO-G2
    1
    1
    2.5W Ta 50W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    9 Ω @ 800mA, 10V
    5V @ 250μA
    520pF @ 25V
    1.6A Tc
    15.5nC @ 10V
    30ns
    1000V
    10V
    ±30V
    35 ns
    25 ns
    1.6A
    5V
    30V
    1kV
    6.4A
    150°C
    5 V
    2.517mm
    6.6mm
    6.1mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • FQD2N80TF
    FQD2N80TF
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    2.5W Ta 50W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    6.3Ohm @ 900mA, 10V
    5V @ 250μA
    550pF @ 25V
    1.8A Tc
    15nC @ 10V
    -
    800V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    -
    -
    -
    FQD2N100TM vs FQD2N80TF
  • FQD2P40TM
    FQD2P40TM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    9 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    Other Transistors
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    -
    2.5W Ta 38W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    9 ns
    P-Channel
    SWITCHING
    6.5 Ω @ 780mA, 10V
    5V @ 250μA
    350pF @ 25V
    1.56A Tc
    13nC @ 10V
    33ns
    -
    10V
    ±30V
    25 ns
    22 ns
    1.56A
    -
    30V
    -400V
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    Tin (Sn)
    400V
    18A
    FQD2N100TM vs FQD2P40TM
  • FQD2N80TM_WS
    FQD2N80TM_WS
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    2.5W Ta 50W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    6.3Ohm @ 900mA, 10V
    5V @ 250μA
    550pF @ 25V
    1.8A Tc
    15nC @ 10V
    -
    800V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D-Pak
    -
    -
    -
    FQD2N100TM vs FQD2N80TM_WS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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