FQD12N20LTM

Fairchild/ON Semiconductor FQD12N20LTM

Part Number:
FQD12N20LTM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481638-FQD12N20LTM
Description:
MOSFET N-CH 200V 9A DPAK
ECAD Model:
Datasheet:
FQD12N20LTM

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Specifications
Fairchild/ON Semiconductor FQD12N20LTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD12N20LTM.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    7 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    QFET®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    280mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    9A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 55W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    280m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1080pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 5V
  • Rise Time
    190ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    120 ns
  • Turn-Off Delay Time
    60 ns
  • Continuous Drain Current (ID)
    9A
  • Threshold Voltage
    2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain to Source Breakdown Voltage
    200V
  • Nominal Vgs
    2 V
  • Height
    2.3mm
  • Length
    6.6mm
  • Width
    6.1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQD12N20LTM Description
FQD12N20LTM is a 200V N-Channel Power MOSFET. This N-Channel enhancement mode power MOSFET FQD12N20LTM is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology FQD12N20LTM has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQD12N20LTM Features
9A, 200V, RDS(on) = 280mΩ(Max.) @VGS = 10 V, ID = 4.5A
Low gate charge ( Typ. 16nC)
Low Crss ( Typ. 17pF)
100% avalanche tested
Low-level gate drive requirement allowing direct operation from logic drivers

FQD12N20LTM Applications
LED TV
CRT/RPTV
AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
FQD12N20LTM More Descriptions
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3
MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Source Voltage Vds:200V; On Resistance
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.22ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V; Package/Case:3-D-PAK ;RoHS Compliant: Yes
MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FQD12N20LTM.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    View Compare
  • FQD12N20LTM
    FQD12N20LTM
    ACTIVE (Last Updated: 1 day ago)
    7 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    260.37mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    280mOhm
    Tin (Sn)
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    GULL WING
    9A
    R-PSSO-G2
    1
    2.5W Ta 55W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    280m Ω @ 4.5A, 10V
    2V @ 250μA
    1080pF @ 25V
    9A Tc
    21nC @ 5V
    190ns
    5V 10V
    ±20V
    120 ns
    60 ns
    9A
    2V
    20V
    9A
    200V
    2 V
    2.3mm
    6.6mm
    6.1mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQD19N10LTF
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    2.5W Ta 50W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    100m Ω @ 7.8A, 10V
    2V @ 250μA
    870pF @ 25V
    15.6A Tc
    18nC @ 5V
    -
    5V 10V
    ±20V
    -
    -
    -
    -
    -
    15.6A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    100V
    0.11Ohm
    62.4A
    100V
    220 mJ
    -
  • FQD10N20CTF
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    50W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    360mOhm @ 3.9A, 10V
    4V @ 250μA
    510pF @ 25V
    7.8A Tc
    26nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    200V
    -
    -
    -
    -
    D-Pak
  • FQD1P50TF
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    QFET®
    2004
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Ta 38W Tc
    -
    -
    -
    -
    -
    P-Channel
    -
    10.5Ohm @ 600mA, 10V
    5V @ 250μA
    350pF @ 25V
    1.2A Tc
    14nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    500V
    -
    -
    -
    -
    D-Pak
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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