Fairchild/ON Semiconductor FQD12N20LTM
- Part Number:
- FQD12N20LTM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481638-FQD12N20LTM
- Description:
- MOSFET N-CH 200V 9A DPAK
- Datasheet:
- FQD12N20LTM
Fairchild/ON Semiconductor FQD12N20LTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQD12N20LTM.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time7 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight260.37mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesQFET®
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance280mOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Current Rating9A
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max2.5W Ta 55W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs280m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs21nC @ 5V
- Rise Time190ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)120 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)9A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)9A
- Drain to Source Breakdown Voltage200V
- Nominal Vgs2 V
- Height2.3mm
- Length6.6mm
- Width6.1mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FQD12N20LTM Description
FQD12N20LTM is a 200V N-Channel Power MOSFET. This N-Channel enhancement mode power MOSFET FQD12N20LTM is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology FQD12N20LTM has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQD12N20LTM Features
9A, 200V, RDS(on) = 280mΩ(Max.) @VGS = 10 V, ID = 4.5A
Low gate charge ( Typ. 16nC)
Low Crss ( Typ. 17pF)
100% avalanche tested
Low-level gate drive requirement allowing direct operation from logic drivers
FQD12N20LTM Applications
LED TV
CRT/RPTV
AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
FQD12N20LTM is a 200V N-Channel Power MOSFET. This N-Channel enhancement mode power MOSFET FQD12N20LTM is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology FQD12N20LTM has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQD12N20LTM Features
9A, 200V, RDS(on) = 280mΩ(Max.) @VGS = 10 V, ID = 4.5A
Low gate charge ( Typ. 16nC)
Low Crss ( Typ. 17pF)
100% avalanche tested
Low-level gate drive requirement allowing direct operation from logic drivers
FQD12N20LTM Applications
LED TV
CRT/RPTV
AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
FQD12N20LTM More Descriptions
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3
MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Source Voltage Vds:200V; On Resistance
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.22ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V; Package/Case:3-D-PAK ;RoHS Compliant: Yes
MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3
MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Source Voltage Vds:200V; On Resistance
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.22ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V; Package/Case:3-D-PAK ;RoHS Compliant: Yes
MOSFET, N-CH, 200V, 9A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
The three parts on the right have similar specifications to FQD12N20LTM.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormCurrent RatingJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageView Compare
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FQD12N20LTMACTIVE (Last Updated: 1 day ago)7 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON-55°C~150°C TJTape & Reel (TR)QFET®2001e3yesActive1 (Unlimited)2EAR99280mOhmTin (Sn)FET General Purpose Power200VMOSFET (Metal Oxide)GULL WING9AR-PSSO-G212.5W Ta 55W TcSingleENHANCEMENT MODE2.5WDRAIN15 nsN-ChannelSWITCHING280m Ω @ 4.5A, 10V2V @ 250μA1080pF @ 25V9A Tc21nC @ 5V190ns5V 10V±20V120 ns60 ns9A2V20V9A200V2 V2.3mm6.6mm6.1mmNo SVHCNoROHS3 CompliantLead Free--------------
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--SILICON-55°C~150°C TJTape & Reel (TR)QFET®-e3yesObsolete1 (Unlimited)2--MATTE TIN--MOSFET (Metal Oxide)GULL WING-R-PSSO-G212.5W Ta 50W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING100m Ω @ 7.8A, 10V2V @ 250μA870pF @ 25V15.6A Tc18nC @ 5V-5V 10V±20V-----15.6A-------ROHS3 Compliant-YESSINGLENOT SPECIFIEDNOT SPECIFIED3COMMERCIALSINGLE WITH BUILT-IN DIODE100V0.11Ohm62.4A100V220 mJ-
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)QFET®2016--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----50W Tc-----N-Channel-360mOhm @ 3.9A, 10V4V @ 250μA510pF @ 25V7.8A Tc26nC @ 10V-10V±30V----------------------200V----D-Pak
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)QFET®2004--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----2.5W Ta 38W Tc-----P-Channel-10.5Ohm @ 600mA, 10V5V @ 250μA350pF @ 25V1.2A Tc14nC @ 10V-10V±30V----------------------500V----D-Pak
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