Fairchild/ON Semiconductor FQB33N10TM

Name: FQB33N10TM
Brand: Fairchild/ON Semiconductor
SKU: 2484970-FQB33N10TM
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQB33N10TM

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484970-FQB33N10TM

Description:: MOSFET N-CH 100V 33A D2PAK

ECAD Model:

Datasheet:: FQB33N10TM

Specifications

Fairchild/ON Semiconductor FQB33N10TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQB33N10TM.

Lifecycle Status
ACTIVE (Last Updated: 20 hours ago)
Factory Lead Time
11 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
QFET®
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
52MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
33A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
3.75W Ta 127W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.75W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
52m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
51nC @ 10V
Rise Time
195ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
110 ns
Turn-Off Delay Time
80 ns
Continuous Drain Current (ID)
33A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
100V
Height
4.83mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQB33N10TM Description
A 100V N-channel QFET? MOSFET made with planar stripe and DMOS technology is called the FQB33N10TM. The on-state resistance of these advanced MOSFETs has been specifically reduced, and they also offer enhanced switching performance and great avalanche energy strength. It is appropriate for applications requiring variable switching power, DC motor control, audio amplifiers, and switched mode power supplies.

FQB33N10TM Features
Low gate charge (typical 38nC)
Low Crss (typical 62pF)
100% avalanche tested
±25V gate source voltage
40°C/W thermal resistance, junction to ambient
1.18°C/W thermal resistance, junction to case

FQB33N10TM Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FQB33N10TM More Descriptions

Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2 Tab D2pak Tape And Reel
N-Channel Power MOSFET, QFET®, 100 V, 33 A, 52 mΩ, D2PAK
N-Channel 100 V 52 mOhm Surface Mount Mosfet - D2PAK-3
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.052ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
MOSFET, N TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Package / Case:D2-PAK; Power Dissipation Pd:127W; Power Dissipation Pd:127W; Pulse Current Idm:132A; Rate of Voltage Change dv / dt:6V/ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Product Comparison

The three parts on the right have similar specifications to FQB33N10TM.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Termination

Terminal Finish

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Feedback Cap-Max (Crss)

Radiation Hardening

View Compare
FQB33N10TM

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 20 hours ago)

11 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

QFET®

2000

e3

yes

Active

1 (Unlimited)

2

EAR99

52MOhm

FET General Purpose Power

100V

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

not_compliant

33A

NOT SPECIFIED

R-PSSO-G2

Not Qualified

1

3.75W Ta 127W Tc

Single

ENHANCEMENT MODE

3.75W

DRAIN

15 ns

N-Channel

SWITCHING

52m Ω @ 16.5A, 10V

4V @ 250μA

1500pF @ 25V

33A Tc

51nC @ 10V

195ns

10V

±25V

110 ns

80 ns

33A

4V

25V

100V

4.83mm

10.67mm

9.65mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
FQB3P50TM

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

2000

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.13W Ta 85W Tc

-

-

-

-

-

P-Channel

-

4.9Ohm @ 1.35A, 10V

5V @ 250μA

660pF @ 25V

2.7A Tc

23nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK (TO-263AB)

500V

-

-

-

-

-

-

-

FQB33N10TM vs FQB3P50TM
FQB3N80TM

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

QFET®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

5Ohm @ 1.5A, 10V

5V @ 250μA

690pF @ 25V

3A Tc

19nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK (TO-263AB)

800V

-

-

-

-

-

-

-

FQB33N10TM vs FQB3N80TM
FQB34N20LTM

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 21 hours ago)

4 Weeks

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

2

1.31247g

SILICON

-55°C~150°C TJ

Cut Tape (CT)

QFET®

2000

e3

yes

Active

1 (Unlimited)

2

EAR99

75mOhm

-

200V

MOSFET (Metal Oxide)

GULL WING

-

-

31A

-

-

-

1

3.13W Ta 180W Tc

Single

ENHANCEMENT MODE

3.13W

DRAIN

45 ns

N-Channel

SWITCHING

75m Ω @ 15.5A, 10V

2V @ 250μA

3900pF @ 25V

31A Tc

72nC @ 5V

520ns

5V 10V

±20V

370 ns

170 ns

31A

2V

20V

200V

4.83mm

10.67mm

9.65mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

SMD/SMT

Tin (Sn)

200V

640 mJ

2 V

67 pF

No

FQB33N10TM vs FQB34N20LTM

Certification

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FQB33N10TM Specification

Part Number	Manufacturers	Description	Stock	Price
FQB33N10TM DISTI #V79:2366_22402978	ON Semiconductor	100V N-CHANNEL QFET	18300	1 $1.5264 10 $1.1847 100 $0.912 500 $0.8072 800 $0.6391 2400 $0.5669 9600 $0.5463
FQB33N10TM DISTI #V72:2272_06301127	ON Semiconductor	100V N-CHANNEL QFET	1397	1 $1.5333 10 $1.1893 25 $1.0704 100 $0.9148 250 $0.8233 500 $0.8094 1000 $0.6404
FQB33N10TM DISTI #V36:1790_06301127	ON Semiconductor	100V N-CHANNEL QFET	0	800 $0.66 8000 $0.6455 80000 $0.5609 400000 $0.5171 800000 $0.5167
FQB33N10TM DISTI #FQB33N10TMCT-ND	ON Semiconductor	MOSFET N-CH 100V 33A D2PAK RoHS: Compliant	365	1 $1.53 10 $1.364 100 $1.0636
FQB33N10TM DISTI #FQB33N10TMDKR-ND	ON Semiconductor	MOSFET N-CH 100V 33A D2PAK RoHS: Compliant	365	1 $1.53 10 $1.364 100 $1.0636
FQB33N10TM DISTI #FQB33N10TMTR-ND	ON Semiconductor	MOSFET N-CH 100V 33A D2PAK RoHS: Compliant	0	800 $0.85306 1600 $0.67347 2400 $0.62857 5600 $0.59714
FQB33N10TM DISTI #30304371	ON Semiconductor	100V N-CHANNEL QFET	18300	15 $1.5264
FQB33N10TM DISTI #33728927	ON Semiconductor	100V N-CHANNEL QFET	14400	800 $0.4185
FQB33N10TM DISTI #32723459	ON Semiconductor	100V N-CHANNEL QFET	1397	13 $1.5333
FQB33N10TM DISTI #FQB33N10TM	ON Semiconductor	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $0.48601 1600 $0.48286 3200 $0.47667 4800 $0.47063 8000 $0.45901
FQB33N10TM DISTI #FQB33N10TM	ON Semiconductor	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $0.7179 1600 $0.5869 3200 $0.5379 4800 $0.4969 8000 $0.4609
FQB33N10TM DISTI #FQB33N10TM	ON Semiconductor	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	439 $0.7449 878 $0.7399 1317 $0.7299 2195 $0.7209 4390 $0.7029
FQB33N10TM DISTI #FQB33N10TM	ON Semiconductor	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	1600 $0.7436 3200 $0.715 4800 $0.68852 8000 $0.66393 16000 $0.64103 40000 $0.61967 80000 $0.60951
FQB33N10TM DISTI #67P3508	ON Semiconductor	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0
FQB33N10TM DISTI #67P3508	ON Semiconductor	N CHANNEL MOSFET, 100V, 33A, D2-PAK, Transistor P	0	1 $1.46 10 $1.25 25 $1.16 50 $1.06 100 $0.968 250 $0.915 500 $0.861
FQB33N10TM DISTI #38C7245	ON Semiconductor	N CHANNEL MOSFET, 100V, 33A, D2-PAK, FULL REEL, T	0	1 $0.66 800 $0.656 2400 $0.6 9600 $0.583
FQB33N10TM DISTI #512-FQB33N10TM	ON Semiconductor	MOSFET 100V N-Channel QFET RoHS: Compliant	1613	1 $1.41 10 $1.2 100 $0.92 500 $0.813 800 $0.642
FQB33N10TM DISTI #	ON Semiconductor	Power Field-Effect Transistor, 33A I(D), 100V, 0.0 RoHS: Compliant	800	1 $0.79 25 $0.74 100 $0.71 500 $0.68 1000 $0.65
FQB33N10TM DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 33A I(D), 100V, 0.0 RoHS: Compliant	800	1 $0.79 25 $0.74 100 $0.71 500 $0.68 1000 $0.65
FQB33N10TM DISTI #6710889P	ON Semiconductor	MOSFET N-CHANNEL 100V 33A D2PAK, RL	615	50 $0.402
FQB33N10TM DISTI #	Fairchild Semiconductor Corporation		175
FQB33N10TM DISTI #FQB33N10TM	ON Semiconductor	Transistor: N-MOSFET, unipolar, 100V, 23A, 127	317	1 $0.87 5 $0.74 25 $0.6 100 $0.54 500 $0.51
FQB33N10TM DISTI #1555165	ON Semiconductor	MOSFET, N TO-263 RoHS: Compliant	97	1 $2.17 10 $1.85 100 $1.42 500 $1.26 800 $0.987
FQB33N10TM DISTI #1555165RL	ON Semiconductor	MOSFET, N TO-263 RoHS: Compliant	0	1 $2.17 10 $1.85 100 $1.42 500 $1.26 800 $0.987
FQB33N10TM DISTI #1555165	ON Semiconductor	MOSFET, N TO-263	319	1 $1.23 10 $0.98 100 $0.709 250 $0.602 500 $0.495

FQB33N1~~(5)~~
FQB33N~~(6)~~
FQB33~~(6)~~
FQB3~~(51)~~
FQB~~(58)~~

Fairchild/ON Semiconductor FQB33N10TM

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