Fairchild/ON Semiconductor FQAF44N08
- Part Number:
- FQAF44N08
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586702-FQAF44N08
- Description:
- MOSFET N-CH 80V 35.6A TO-3PF
- Datasheet:
- FQAF44N08
Fairchild/ON Semiconductor FQAF44N08 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQAF44N08.
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3 Full Pack
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesQFET®
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishNOT SPECIFIED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max83W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs34m Ω @ 17.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.43pF @ 25V
- Current - Continuous Drain (Id) @ 25°C35.6A Tc
- Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
- Drain to Source Voltage (Vdss)80V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Drain Current-Max (Abs) (ID)35.6A
- Drain-source On Resistance-Max0.034Ohm
- Pulsed Drain Current-Max (IDM)142.4A
- DS Breakdown Voltage-Min80V
- Avalanche Energy Rating (Eas)450 mJ
- RoHS StatusROHS3 Compliant
FQAF44N08 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 450 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.43pF @ 25V.35.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 142.4A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 80V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80V.Using drive voltage (10V) reduces this device's overall power consumption.
FQAF44N08 Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 142.4A.
a 80V drain to source voltage (Vdss)
FQAF44N08 Applications
There are a lot of Rochester Electronics, LLC
FQAF44N08 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 450 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.43pF @ 25V.35.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 142.4A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 80V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80V.Using drive voltage (10V) reduces this device's overall power consumption.
FQAF44N08 Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 142.4A.
a 80V drain to source voltage (Vdss)
FQAF44N08 Applications
There are a lot of Rochester Electronics, LLC
FQAF44N08 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
FQAF44N08 More Descriptions
Trans MOSFET N-CH 80V 35.6A 3-Pin(3 Tab) TO-3PF
N-CHANNEL POWER MOSFET
MOSFETs 80V N-Channel QFET
MISCELLANEOUS MOSFETS;
N-CHANNEL POWER MOSFET
MOSFETs 80V N-Channel QFET
MISCELLANEOUS MOSFETS;
The three parts on the right have similar specifications to FQAF44N08.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusJESD-609 CodeView Compare
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FQAF44N08Through HoleTO-3P-3 Full PackNOSILICON-55°C~175°C TJTubeQFET®yesObsolete1 (Unlimited)3NOT SPECIFIEDMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE83W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING34m Ω @ 17.8A, 10V4V @ 250μA1.43pF @ 25V35.6A Tc50nC @ 10V80V10V±25V35.6A0.034Ohm142.4A80V450 mJROHS3 Compliant--
-
Through HoleTO-3P-3 Full PackNOSILICON-55°C~150°C TJTubeQFET®yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE107W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING1.2 Ω @ 2.95A, 10V5V @ 250μA2.35pF @ 25V5.9A Tc57nC @ 10V800V10V±30V5.9A-23.6A800V850 mJROHS3 Compliante3
-
Through HoleTO-3P-3 Full PackNOSILICON-55°C~175°C TJTubeQFET®yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE100W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING16m Ω @ 28A, 10V4V @ 250μA3.25pF @ 25V56A Tc110nC @ 10V80V10V±25V56A0.016Ohm224A80V1360 mJROHS3 Compliante3
-
Through HoleTO-3P-3 Full PackNOSILICON-55°C~150°C TJTubeQFET®yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE107W TcENHANCEMENT MODE-N-ChannelSWITCHING1.55 Ω @ 2.6A, 10V5V @ 250μA2.28pF @ 25V5.2A Tc59nC @ 10V900V10V±30V5.2A-20.8A900V830 mJROHS3 Compliante3
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