FQAF44N08

Fairchild/ON Semiconductor FQAF44N08

Part Number:
FQAF44N08
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3586702-FQAF44N08
Description:
MOSFET N-CH 80V 35.6A TO-3PF
ECAD Model:
Datasheet:
FQAF44N08

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Specifications
Fairchild/ON Semiconductor FQAF44N08 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQAF44N08.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3 Full Pack
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    QFET®
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    NOT SPECIFIED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    83W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    34m Ω @ 17.8A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.43pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    35.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 10V
  • Drain to Source Voltage (Vdss)
    80V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Drain Current-Max (Abs) (ID)
    35.6A
  • Drain-source On Resistance-Max
    0.034Ohm
  • Pulsed Drain Current-Max (IDM)
    142.4A
  • DS Breakdown Voltage-Min
    80V
  • Avalanche Energy Rating (Eas)
    450 mJ
  • RoHS Status
    ROHS3 Compliant
Description
FQAF44N08 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 450 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.43pF @ 25V.35.6A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 142.4A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 80V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80V.Using drive voltage (10V) reduces this device's overall power consumption.

FQAF44N08 Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 142.4A.
a 80V drain to source voltage (Vdss)


FQAF44N08 Applications
There are a lot of Rochester Electronics, LLC
FQAF44N08 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
FQAF44N08 More Descriptions
Trans MOSFET N-CH 80V 35.6A 3-Pin(3 Tab) TO-3PF
N-CHANNEL POWER MOSFET
MOSFETs 80V N-Channel QFET
MISCELLANEOUS MOSFETS;
Product Comparison
The three parts on the right have similar specifications to FQAF44N08.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    JESD-609 Code
    View Compare
  • FQAF44N08
    FQAF44N08
    Through Hole
    TO-3P-3 Full Pack
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    QFET®
    yes
    Obsolete
    1 (Unlimited)
    3
    NOT SPECIFIED
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    83W Tc
    ENHANCEMENT MODE
    ISOLATED
    N-Channel
    SWITCHING
    34m Ω @ 17.8A, 10V
    4V @ 250μA
    1.43pF @ 25V
    35.6A Tc
    50nC @ 10V
    80V
    10V
    ±25V
    35.6A
    0.034Ohm
    142.4A
    80V
    450 mJ
    ROHS3 Compliant
    -
    -
  • FQAF8N80
    Through Hole
    TO-3P-3 Full Pack
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    MOSFET (Metal Oxide)
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    3
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    107W Tc
    ENHANCEMENT MODE
    ISOLATED
    N-Channel
    SWITCHING
    1.2 Ω @ 2.95A, 10V
    5V @ 250μA
    2.35pF @ 25V
    5.9A Tc
    57nC @ 10V
    800V
    10V
    ±30V
    5.9A
    -
    23.6A
    800V
    850 mJ
    ROHS3 Compliant
    e3
  • FQAF90N08
    Through Hole
    TO-3P-3 Full Pack
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    QFET®
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    MOSFET (Metal Oxide)
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    3
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    100W Tc
    ENHANCEMENT MODE
    ISOLATED
    N-Channel
    SWITCHING
    16m Ω @ 28A, 10V
    4V @ 250μA
    3.25pF @ 25V
    56A Tc
    110nC @ 10V
    80V
    10V
    ±25V
    56A
    0.016Ohm
    224A
    80V
    1360 mJ
    ROHS3 Compliant
    e3
  • FQAF7N90
    Through Hole
    TO-3P-3 Full Pack
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    MOSFET (Metal Oxide)
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    3
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    107W Tc
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    1.55 Ω @ 2.6A, 10V
    5V @ 250μA
    2.28pF @ 25V
    5.2A Tc
    59nC @ 10V
    900V
    10V
    ±30V
    5.2A
    -
    20.8A
    900V
    830 mJ
    ROHS3 Compliant
    e3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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