Fairchild/ON Semiconductor FQA90N15

Name: FQA90N15
Brand: Fairchild/ON Semiconductor
SKU: 2486726-FQA90N15
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQA90N15

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2486726-FQA90N15

Description:: MOSFET N-CH 150V 90A TO-3P

ECAD Model:

Datasheet:: FQA90N15

Specifications

Fairchild/ON Semiconductor FQA90N15 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQA90N15.

Lifecycle Status
ACTIVE (Last Updated: 10 hours ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
90A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
375W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
375W
Turn On Delay Time
105 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
18m Ω @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
8700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
90A Tc
Gate Charge (Qg) (Max) @ Vgs
285nC @ 10V
Rise Time
760ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
410 ns
Turn-Off Delay Time
470 ns
Continuous Drain Current (ID)
90A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
150V
Height
18.9mm
Length
15.8mm
Width
5mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQA90N15 Description
FQA90N15 is an N-channel power MOSFET. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The FQA90N15 is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQA90N15 Features
90A, 150V, RDS(on) = 0.018Ω(Max.) @VGS = 10 V, ID = 45A
Low gate charge ( Typ. 220nC)
Low Crss ( Typ. 200pF)
100% avalanche tested
175°C maximum junction temperature rating

FQA90N15 Applications
AC-DC Merchant Power Supply - Servers & Workstations
Workstation
Server & Mainframe
Desktop PC
AC-DC Merchant Power Supply - Desktop PC

FQA90N15 More Descriptions

N-Channel Power MOSFET, QFET®, 150V, 90A, 18mΩ, TO-3P
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:90A; Resistance, Rds On:0.018ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3P; Termination ;RoHS Compliant: Yes
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:150V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to FQA90N15.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Published

Terminal Position

Reach Compliance Code

JESD-30 Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Resistance

Terminal Finish

Number of Channels

Radiation Hardening

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FQA90N15

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 10 hours ago)

10 Weeks

Tin

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~175°C TJ

Tube

QFET®

e3

yes

Active

1 (Unlimited)

3

EAR99

FET General Purpose Power

150V

MOSFET (Metal Oxide)

NOT SPECIFIED

90A

NOT SPECIFIED

Not Qualified

1

375W Tc

Single

ENHANCEMENT MODE

375W

105 ns

N-Channel

SWITCHING

18m Ω @ 45A, 10V

4V @ 250μA

8700pF @ 25V

90A Tc

285nC @ 10V

760ns

10V

±25V

410 ns

470 ns

90A

4V

25V

150V

18.9mm

15.8mm

5mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQA9N90C

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

yes

Obsolete

1 (Unlimited)

3

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

Not Qualified

1

280W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

1.4 Ω @ 4.5A, 10V

5V @ 250μA

2730pF @ 25V

9A Tc

58nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

NO

2007

SINGLE

compliant

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

900V

9A

36A

900V

900 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FQA90N15 vs FQA9N90C
FQA9P25

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

4 Weeks

-

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~150°C TJ

Tube

QFET®

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-250V

MOSFET (Metal Oxide)

-

-10.5A

-

-

1

150W Tc

Single

ENHANCEMENT MODE

150W

20 ns

P-Channel

SWITCHING

620m Ω @ 5.25A, 10V

5V @ 250μA

1180pF @ 25V

10.5A Tc

38nC @ 10V

150ns

10V

±30V

65 ns

45 ns

10.5A

-

30V

-250V

20.1mm

15.8mm

5mm

-

ROHS3 Compliant

Lead Free

-

2000

-

-

-

-

250V

-

42A

-

650 mJ

620MOhm

Tin (Sn)

1

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FQA90N15 vs FQA9P25
FQA9N90C_F109

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

5V @ 250µA

±30V

MOSFET (Metal Oxide)

TO-3PN

QFET®

1.4 Ohm @ 4.5A, 10V

280W (Tc)

Tube

TO-3P-3, SC-65-3

-55°C ~ 150°C (TJ)

Through Hole

2730pF @ 25V

58nC @ 10V

N-Channel

-

10V

900V

9A (Tc)

FQA90N15 vs FQA9N90C_F109