Fairchild/ON Semiconductor FQA70N10

Name: FQA70N10
Brand: Fairchild/ON Semiconductor
SKU: 2479357-FQA70N10
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQA70N10

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479357-FQA70N10

Description:: MOSFET N-CH 100V 70A TO-3P

ECAD Model:

Datasheet:: FQA70N10

Specifications

Fairchild/ON Semiconductor FQA70N10 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQA70N10.

Lifecycle Status
ACTIVE (Last Updated: 7 hours ago)
Factory Lead Time
11 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
QFET®
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
23mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
70A
Number of Elements
1
Power Dissipation-Max
214W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
214W
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
70A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
470ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
160 ns
Turn-Off Delay Time
130 ns
Continuous Drain Current (ID)
70A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
280A
Dual Supply Voltage
100V
Nominal Vgs
4 V
Height
18.9mm
Length
15.8mm
Width
5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQA70N10 Description This N-Channel cnhancement mode power MOSFET isproduced usingFairchldScmiconductors proprietary planar stripeand DMOS technology. This advanced MOSFET technoliogy has been cspecialiy tailored to reduce on-state resistance,and toprovide supenior switchingperformance and high awalanche energy sirength. These devices are suitable for switched mode power supples,cudio ampiifier, DC motor control, and variable switching power applications.

FQA70N10 Features 70A, 100 V, RDsjanj) = 23 m (Max) @Ves = 10v,l= 35A Low Gate Charge (Typ.85 nC) Low Crss ( Typ.150 pF) 100% Awalanche Tested 175C Maximum Junction Temperature Rating

FQA70N10 More Descriptions

N-Channel Power MOSFET, QFET®, 100 V, 70 A, 23 mΩ, TO-3P
N-Channel 100 V 0.023 Ohm Through Hole Mosfet - TO-3PN
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to FQA70N10.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Drain-source On Resistance-Max

View Compare
FQA70N10

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 7 hours ago)

11 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~175°C TJ

Tube

QFET®

2000

e3

yes

Active

1 (Unlimited)

3

EAR99

23mOhm

Tin (Sn)

FET General Purpose Power

100V

MOSFET (Metal Oxide)

70A

1

214W Tc

Single

ENHANCEMENT MODE

214W

30 ns

N-Channel

SWITCHING

23m Ω @ 35A, 10V

4V @ 250μA

3300pF @ 25V

70A Tc

110nC @ 10V

470ns

10V

±25V

160 ns

130 ns

70A

4V

25V

100V

280A

100V

4 V

18.9mm

15.8mm

5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQA7N90M_F109

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

-

-55°C~150°C TJ

Tube

QFET®

2007

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

210W Tc

-

-

-

-

N-Channel

-

1.8Ohm @ 3.5A, 10V

5V @ 250μA

1880pF @ 25V

7A Tc

52nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-3P

900V

-

-

-

-

-

-

-

-

-

-

-

-

-

FQA70N10 vs FQA7N90M_F109
FQA7N90

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

-

1

198W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

1.55 Ω @ 3.7A, 10V

5V @ 250μA

2.28pF @ 25V

7.4A Tc

59nC @ 10V

-

10V

±30V

-

-

-

-

-

-

29.6A

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

900V

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

7.4A

900V

830 mJ

-

FQA70N10 vs FQA7N90
FQA70N15

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

8 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~175°C TJ

Tube

QFET®

2000

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Tin (Sn)

FET General Purpose Power

150V

MOSFET (Metal Oxide)

70A

1

330W Tc

Single

ENHANCEMENT MODE

330W

60 ns

N-Channel

SWITCHING

28m Ω @ 35A, 10V

4V @ 250μA

5400pF @ 25V

70A Tc

175nC @ 10V

420ns

10V

±25V

290 ns

340 ns

70A

4V

25V

150V

280A

-

-

18.9mm

15.8mm

5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

0.028Ohm

FQA70N10 vs FQA70N15

Certification

Related parts for FQA70N10

FQA7N90_F109

Fairchild/ON Semiconductor

MOSFET N-CH 900V 7.4A TO-3P
FQA7N90M_F109

Fairchild/ON Semiconductor

MOSFET N-CH 900V 7A TO-3P
FQA7N90M

Fairchild/ON Semiconductor

MOSFET N-CH 900V 7A TO-3P
FQA7N80C

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MOSFET N-CH 800V 7A TO-3P
FQA7N90

Fairchild/ON Semiconductor

MOSFET N-CH 900V 7.4A TO-3P
FQA70N15

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MOSFET N-CH 150V 70A TO-3P
FQA70N10

Fairchild/ON Semiconductor

MOSFET N-CH 100V 70A TO-3P

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Part Number	Manufacturers	Description	Stock	Price
FQA70N10 DISTI #V99:2348_06359050	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3 Tab) TO-3PN Rai	795	1 $2.9887 10 $2.315 25 $2.084 450 $1.902 900 $1.714 2700 $1.378
FQA70N10 DISTI #V36:1790_06359050	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3 Tab) TO-3PN Rai	98	1 $2.9887 10 $2.315 25 $2.084 450 $1.902 900 $1.714 2700 $1.378
FQA70N10 DISTI #FQA70N10-ND	ON Semiconductor	MOSFET N-CH 100V 70A TO-3P RoHS: Compliant	658	1 $2.97 10 $2.664 25 $2.5132 450 $2.01053 900 $1.75922 2700 $1.35711 5400 $1.30685
FQA70N10 DISTI #25976945	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3 Tab) TO-3PN Rai	795	6 $2.9887
FQA70N10 DISTI #27612069	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3 Tab) TO-3PN Rai	98	6 $2.9887
FQA70N10 DISTI #FQA70N10	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3 Tab) TO-3P(N) R RoHS: Compliant	2700	1 $1.4759 10 $1.3419 25 $1.2299 50 $1.1809 100 $1.1359 500 $1.0929 1000 $1.0539
FQA70N10 DISTI #FQA70N10	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3 Tab) TO-3P(N) R RoHS: Compliant	4550	30 $1.20854 60 $1.20069 90 $1.18529 150 $1.17029 300 $1.1414
FQA70N10 DISTI #FQA70N10	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3 Tab) TO-3P(N) R RoHS: Compliant	0	450 $1.665 900 $1.60096 1350 $1.54167 2250 $1.48661 4500 $1.43534 11250 $1.3875 22500 $1.36475
FQA70N10 DISTI #FQA70N10	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3 Tab) TO-3P(N) R RoHS: Compliant	0	211 $1.49 422 $1.49 633 $1.49 1055 $1.49 2110 $1.39
FQA70N10 DISTI #97K0152	ON Semiconductor	MOSFET, N, TO-3P, Transistor Polarity:N Channel,	363	1 $3.31 10 $2.86 100 $2.34 500 $2.08 1000 $1.77 2500 $1.67 5000 $1.62
FQA70N10. DISTI #27AC5821	Fairchild Semiconductor Corporation	QF 100V 25MOHM TO3PN ROHS COMPLIANT: YES	4550	1 $1.21 60 $1.2 90 $1.19 150 $1.17 300 $1.15
FQA70N10 DISTI #512-FQA70N10	ON Semiconductor	MOSFET 100V N-Channel QFET RoHS: Compliant	493	1 $2.81 10 $2.39 100 $1.91 500 $1.67 1000 $1.38 2500 $1.37
FQA70N10 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 70A I(D), 100V, 0.0 RoHS: Compliant	18899	1 $1.67 25 $1.55 100 $1.49 500 $1.43 1000 $1.36
FQA70N10 DISTI #6714963P	ON Semiconductor	MOSFET N-CHANNEL 100V 70A TO-3P(N), TU	269	10 $1.53 20 $1.4
FQA70N10 DISTI #6714963	ON Semiconductor	MOSFET N-CHANNEL 100V 70A TO-3P(N), EA	87	1 $2 10 $1.53 20 $1.4
FQA70N10 DISTI #FQA70N10	ON Semiconductor	Transistor: N-MOSFET, unipolar, 100V, 49.5A, 2	421	1 $2.07 3 $1.78 10 $1.43 30 $1.28
FQA70N10 DISTI #XSKDRABV0019377		RoHS: Compliant	2250	450 $1.67 2250 $1.55
FQA70N10 DISTI #9846085	ON Semiconductor	MOSFET, N, TO-3P RoHS: Compliant	367	1 $4.22 10 $3.59 100 $3.11 250 $2.94 500 $2.65
FQA70N10 DISTI #9846085	ON Semiconductor	MOSFET, N, TO-3P	423	1 $2.38 10 $1.79 100 $1.56 250 $1.47 500 $1.32

FQA70N1~~(4)~~
FQA70N~~(5)~~
FQA70~~(5)~~
FQA7~~(25)~~
FQA~~(103)~~

Fairchild/ON Semiconductor FQA70N10

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