Fairchild/ON Semiconductor FQA65N20

Name: FQA65N20
Brand: Fairchild/ON Semiconductor
SKU: 2482633-FQA65N20
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQA65N20

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2482633-FQA65N20

Description:: MOSFET N-CH 200V 65A TO-3P

ECAD Model:

Datasheet:: FQA65N20

Specifications

Fairchild/ON Semiconductor FQA65N20 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQA65N20.

Lifecycle Status
ACTIVE (Last Updated: 5 hours ago)
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
QFET®
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Current Rating
65A
Number of Elements
1
Power Dissipation-Max
310W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
310W
Turn On Delay Time
120 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
32m Ω @ 32.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
65A Tc
Gate Charge (Qg) (Max) @ Vgs
200nC @ 10V
Rise Time
640ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
275 ns
Turn-Off Delay Time
340 ns
Continuous Drain Current (ID)
65A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
260A
Height
18.9mm
Length
15.8mm
Width
5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FQA65N20 Description
FQA65N20 is a type of N-channel QFET? MOSFET that is manufactured by ON Semiconductor based on the proprietary planar stripe and DMOS technology. On the basis of this technology, low on-state resistance, advanced switching performance, and high avalanche energy strength can be ensured. FQA65N20 is well suited for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FQA65N20 Features
Low on-state resistance
Advanced switching performance
High avalanche energy strength
Available in the TO-3PN package
Proprietary planar stripe and DMOS technology

FQA65N20 Applications
Electronic lamp ballasts
Switched-mode power supplies
Active power factor correction (PFC)

FQA65N20 More Descriptions

N-Channel Power MOSFET, QFET®, 200 V, 65 A, 32 mΩ, TO-3P
MOSFET N-CH 200V 65A TO-3P / Trans MOSFET N-CH 200V 65A 3-Pin(3 Tab) TO-3P Tube
N-Channel 200 V 32 mO 200 nC Flange Mount QFET Mosfet - TO-3PN
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:65A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3P; Termination ;RoHS Compliant: Yes
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:65A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:260A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to FQA65N20.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Resistance

View Compare
FQA65N20

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 5 hours ago)

4 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~150°C TJ

Tube

QFET®

2001

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

200V

MOSFET (Metal Oxide)

65A

1

310W Tc

Single

ENHANCEMENT MODE

310W

120 ns

N-Channel

SWITCHING

32m Ω @ 32.5A, 10V

5V @ 250μA

7900pF @ 25V

65A Tc

200nC @ 10V

640ns

10V

±30V

275 ns

340 ns

65A

5V

30V

200V

260A

18.9mm

15.8mm

5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQA6N80

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

e3

yes

Obsolete

1 (Unlimited)

3

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

-

1

185W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

1.95 Ω @ 3.15A, 10V

5V @ 250μA

1.5pF @ 25V

6.3A Tc

31nC @ 10V

-

10V

±30V

-

-

-

-

-

-

25.2A

-

-

-

-

-

ROHS3 Compliant

-

NO

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

800V

6.3A

800V

680 mJ

-

FQA65N20 vs FQA6N80
FQA6N90

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

SILICON

-55°C~150°C TJ

Tube

QFET®

-

-

yes

Obsolete

1 (Unlimited)

3

-

NOT SPECIFIED

-

-

MOSFET (Metal Oxide)

-

1

198W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

1.9 Ω @ 3.2A, 10V

5V @ 250μA

1.88pF @ 25V

6.4A Tc

52nC @ 10V

-

10V

±30V

-

-

-

-

-

-

25.6A

-

-

-

-

-

ROHS3 Compliant

-

NO

SINGLE

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

900V

6.4A

900V

715 mJ

-

FQA65N20 vs FQA6N90
FQA62N25C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

4 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~150°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

FET General Purpose Power

250V

MOSFET (Metal Oxide)

62A

1

298W Tc

Single

ENHANCEMENT MODE

298W

75 ns

N-Channel

SWITCHING

35m Ω @ 31A, 10V

4V @ 250μA

6280pF @ 25V

62A Tc

130nC @ 10V

395ns

10V

±30V

335 ns

245 ns

62A

4V

30V

250V

248A

18.9mm

15.8mm

5mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

Not Qualified

-

-

-

-

-

35MOhm

FQA65N20 vs FQA62N25C

Certification

Related parts for FQA65N20

FQA6N90_F109

Fairchild/ON Semiconductor

MOSFET N-CH 900V 6.4A TO-3P
FQA6N80

Fairchild/ON Semiconductor

MOSFET N-CH 800V 6.3A TO-3P
FQA6N80_F109

Fairchild/ON Semiconductor

MOSFET N-CH 800V 6.3A TO-3P
FQA6N90

Fairchild/ON Semiconductor

MOSFET N-CH 900V 6.4A TO-3P
FQA65N20

Fairchild/ON Semiconductor

MOSFET N-CH 200V 65A TO-3P
FQA62N25C

Fairchild/ON Semiconductor

MOSFET N-CH 250V 62A TO-3P

Popular Search Part Number Related Keywords Search Tags

FQA65N20 Price
FQA65N20 Picture
FQA65N20 Buy
FQA65N20 Distributor
FQA65N20 Image
FQA65N20 Inquiry
FQA65N20 Manufacturer
FQA65N20 Part
FQA65N20 Description
FQA65N20 Technical Data
FQA65N20 Stock
FQA65N20 Wholesales
FQA65N20 PDF
FQA65N20 Inventory
FQA65N20 Supplier
FQA65N20 Datasheet
FQA65N20 Rfq
FQA65N20 Specification

FQA65N2~~(2)~~
FQA65N~~(3)~~
FQA65~~(3)~~
FQA6~~(18)~~
FQA~~(103)~~

Part Number	Manufacturers	Description	Stock	Price
FQA65N20 DISTI #26946556	ON Semiconductor	200V N-CHANNEL QFET	210	5 $2.2938
FQA65N20 DISTI #FQA65N20OS-ND	ON Semiconductor	MOSFET N-CH 200V 65A TO-3P RoHS: Compliant	388	1 $5.54 10 $4.979 25 $4.7072 450 $3.87024 900 $3.47276 2700 $2.78239
FQA65N20 DISTI #V36:1790_06359602	ON Semiconductor	200V N-CHANNEL QFET	0	450 $4.37 4500 $4.146 45000 $2.867 225000 $2.238 450000 $2.233
FQA65N20 DISTI #FQA65N20	ON Semiconductor	Trans MOSFET N-CH 200V 65A 3-Pin(3 Tab) TO-3P(N) R RoHS: Compliant	870	1 $2.69 10 $2.49 25 $2.39 50 $2.29 100 $2.19 500 $2.09 1000 $1.99
FQA65N20 DISTI #FQA65N20	ON Semiconductor	Trans MOSFET N-CH 200V 65A 3-Pin(3 Tab) TO-3P(N) R RoHS: Compliant	0	102 $3.19 204 $3.09 306 $3.09 510 $3.09 1020 $2.99
FQA65N20 DISTI #FQA65N20	ON Semiconductor	Trans MOSFET N-CH 200V 65A 3-Pin(3 Tab) TO-3P(N) R RoHS: Compliant	0	450 $2.49 900 $2.39 1800 $2.39 2700 $2.39 4500 $2.29
FQA65N20 DISTI #97K0151	ON Semiconductor	MOSFET, N, TO-3P, Transistor Polarity:N Channel,	58	1 $5.81 10 $5.02 25 $4.81 50 $4.61 100 $4.41 250 $4.21 500 $3.83
FQA65N20 DISTI #512-FQA65N20	ON Semiconductor	MOSFET 200V N-Channel QFET RoHS: Compliant	426	1 $5.28 10 $4.49 100 $3.89 250 $3.69 500 $3.31 1000 $2.79 2500 $2.65
FQA65N20 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 65A I(D), 200V, 0.0 RoHS: Compliant	1560	1 $3.45 25 $3.2 100 $3.07 500 $2.95 1000 $2.8
FQA65N20 DISTI #6714950P	ON Semiconductor	MOSFET N-CHANNEL 200V 65A TO-3P(N), TU	371	10 $3.37
FQA65N20 DISTI #XSKDRABV0042273		RoHS: Compliant	360	145 $3.46 360 $3.23
FQA65N20 DISTI #XSKDRABS0005766		RoHS: Compliant	510	450 $3.38 510 $3.15
FQA65N20 DISTI #9846077	ON Semiconductor	MOSFET, N, TO-3P RoHS: Compliant	58	1 $8.12 10 $6.91 100 $5.98 250 $5.68 500 $5.09 1000 $4.29 2500 $4.07
FQA65N20 DISTI #9846077	ON Semiconductor	MOSFET, N, TO-3P	258	1 $4.27 10 $3.1 100 $2.69 250 $2.56 500 $2.28

Fairchild/ON Semiconductor FQA65N20

Quick Request Quote

TQP3M9028 RF Amplifier Alternatives, Market Trend, Applications and Other Details

AD7606BSTZ Converter Technical Parameters, Characteristics, Working Principle and Package

LSM6DS3TR Alternatives, Features, Specifications, LSM6DS3TR vs LSM6DS3 and Applications

ISO1050DUBR Characteristics, Application Fields, Layout Guidelines and More