Fairchild/ON Semiconductor FQA55N10
- Part Number:
- FQA55N10
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2853608-FQA55N10
- Description:
- MOSFET N-CH 100V 61A TO-3P
- ECAD Model:
-
- Datasheet:
- FQA55N10
Fairchild/ON Semiconductor FQA55N10 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQA55N10.
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Supplier Device PackageTO-3P
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesQFET®
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max190W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs26mOhm @ 30.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2730pF @ 25V
- Current - Continuous Drain (Id) @ 25°C61A Tc
- Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
FQA55N10 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2730pF @ 25V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQA55N10 Features
a 100V drain to source voltage (Vdss)
FQA55N10 Applications
There are a lot of ON Semiconductor
FQA55N10 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2730pF @ 25V.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQA55N10 Features
a 100V drain to source voltage (Vdss)
FQA55N10 Applications
There are a lot of ON Semiconductor
FQA55N10 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FQA55N10 More Descriptions
Trans MOSFET N-CH 100V 61A 3-Pin (3 Tab) TO-3P Rail
IC SUPERVISOR 1 CHANNEL 5SSOP
MOSFETs 100V N-Channel QFET
OEMs, CMs ONLY (NO BROKERS)
Contact for details
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:61A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3P; Termination Type:Through Hole; Current, Idm Pulse:244A; Pins, No. of:3; Power Dissipation:190W; Power, Pd:190W; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds Max:100V
IC SUPERVISOR 1 CHANNEL 5SSOP
MOSFETs 100V N-Channel QFET
OEMs, CMs ONLY (NO BROKERS)
Contact for details
MOSFET, N, TO-3P; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:61A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-3P; Termination Type:Through Hole; Current, Idm Pulse:244A; Pins, No. of:3; Power Dissipation:190W; Power, Pd:190W; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds Max:100V
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