Fairchild/ON Semiconductor FQA38N30

Name: FQA38N30
Brand: Fairchild/ON Semiconductor
SKU: 2490006-FQA38N30
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FQA38N30

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2490006-FQA38N30

Description:: MOSFET N-CH 300V 38.4A TO-3P

ECAD Model:

Datasheet:: FQA38N30

Specifications

Fairchild/ON Semiconductor FQA38N30 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQA38N30.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 week ago)
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
QFET®
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated DC
300V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
38.4A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
290W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
290W
Turn On Delay Time
80 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
85m Ω @ 19.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
38.4A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
430ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
190 ns
Turn-Off Delay Time
170 ns
Continuous Drain Current (ID)
38.4A
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.085Ohm
Drain to Source Breakdown Voltage
300V
Height
18.9mm
Length
15.8mm
Width
5mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

FQA38N30 Description
These N-Channel enhancement mode power field effect transistors are made utilizing a proprietary planar stripe DMOS process developed by ON Semiconductor. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half bridges, and high efficiency switch mode power supplies.

FQA38N30 Features
38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
Low Gate Charge (Typ. 90 nC)
Low Crss (Typ. 70 pF)
100% Avalanche Tested
RoHS compliant

FQA38N30 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FQA38N30 More Descriptions

N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ
Trans MOSFET N-CH 300V 38.4A 3-Pin(3 Tab) TO-3P(N) Rail - Rail/Tube
Small Signal Field-Effect Transistor, 38.4A I(D), 300V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RAIL / N-CH/300V/38.4A/0.085OHM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Product Comparison

The three parts on the right have similar specifications to FQA38N30.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

RoHS Status

Lead Free

Surface Mount

Terminal Position

Reach Compliance Code

Pin Count

JESD-30 Code

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Subcategory

Threshold Voltage

REACH SVHC

Radiation Hardening

Resistance

Additional Feature

View Compare
FQA38N30

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 1 week ago)

4 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~150°C TJ

Tube

QFET®

2000

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

300V

MOSFET (Metal Oxide)

NOT SPECIFIED

38.4A

NOT SPECIFIED

Not Qualified

1

290W Tc

Single

ENHANCEMENT MODE

290W

80 ns

N-Channel

SWITCHING

85m Ω @ 19.2A, 10V

5V @ 250μA

4400pF @ 25V

38.4A Tc

120nC @ 10V

430ns

10V

±30V

190 ns

170 ns

38.4A

30V

0.085Ohm

300V

18.9mm

15.8mm

5mm

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FQA34N25

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-3P-3, SC-65-3

-

-

SILICON

-55°C~150°C TJ

Tube

-

-

e3

yes

Obsolete

1 (Unlimited)

3

-

MATTE TIN

-

MOSFET (Metal Oxide)

NOT APPLICABLE

-

NOT APPLICABLE

COMMERCIAL

1

245W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

85m Ω @ 17A, 10V

5V @ 250μA

2.75pF @ 25V

34A Tc

80nC @ 10V

-

10V

±30V

-

-

-

-

0.085Ohm

-

-

-

-

ROHS3 Compliant

-

NO

SINGLE

unknown

3

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

250V

34A

136A

250V

700 mJ

-

-

-

-

-

-

FQA38N30 vs FQA34N25
FQA32N20C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

12 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~150°C TJ

Tube

QFET®

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

200V

MOSFET (Metal Oxide)

-

32A

-

-

1

204W Tc

Single

ENHANCEMENT MODE

204W

25 ns

N-Channel

SWITCHING

82m Ω @ 16A, 10V

4V @ 250μA

2220pF @ 25V

32A Tc

110nC @ 10V

270ns

10V

±30V

210 ns

245 ns

32A

30V

0.082Ohm

200V

18.9mm

15.8mm

5mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

955 mJ

FET General Purpose Power

4V

No SVHC

No

-

-

FQA38N30 vs FQA32N20C
FQA36P15

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

4 Weeks

Through Hole

Through Hole

TO-3P-3, SC-65-3

3

6.401g

SILICON

-55°C~175°C TJ

Tube

QFET®

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

-150V

MOSFET (Metal Oxide)

NOT SPECIFIED

-36A

NOT SPECIFIED

Not Qualified

1

294W Tc

Single

ENHANCEMENT MODE

294W

50 ns

P-Channel

SWITCHING

90m Ω @ 18A, 10V

4V @ 250μA

3320pF @ 25V

36A Tc

105nC @ 10V

350ns

10V

±30V

150 ns

155 ns

-36A

30V

-

-150V

18.9mm

15.8mm

5mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

150V

-

-

-

-

Other Transistors

-4V

No SVHC

-

90mOhm

FAST SWITCHING

FQA38N30 vs FQA36P15