Fairchild/ON Semiconductor FQA17N40

FQA17N40 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.3pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 17.2A.Pulsed drain current is maximum rated peak drain current 68.8A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQA17N40 Features
the avalanche energy rating (Eas) is 1000 mJ
based on its rated peak drain current 68.8A.
a 400V drain to source voltage (Vdss)


FQA17N40 Applications
There are a lot of Rochester Electronics, LLC
FQA17N40 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching