Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQA140N10
FQA140N10

Fairchild/ON Semiconductor FQA140N10

Part Number:
FQA140N10
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482628-FQA140N10
Description:
MOSFET N-CH 100V 140A TO-3P
ECAD Model:
Datasheet:
FQA140N10

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FQA140N10 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FQA140N10.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    9 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Weight
    6.401g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    QFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    10mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    140A
  • Number of Elements
    1
  • Power Dissipation-Max
    375W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    375W
  • Turn On Delay Time
    75 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10m Ω @ 70A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    140A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    285nC @ 10V
  • Rise Time
    940ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    360 ns
  • Turn-Off Delay Time
    350 ns
  • Continuous Drain Current (ID)
    140A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    560A
  • Height
    18.9mm
  • Length
    15.8mm
  • Width
    5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FQA140N10 Description   This N-channel enhanced downlink MOSFET  FQA140N10 is produced using Fairchild's proprietary planar stripes and DMOS technology. This advanced MOSFET technology is tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.   FQA140N10  Applications
switching mode power supplies audio amplifiers DC motor control variable switching power     FQA140N10 Features 140A,100 V,Rps(on)=10mΩ(Max.) @VGs=10 V, ID=70A Low Gate Charge(Typ.220nC) Low Crss(Typ.470pF) 100%Avalanche Tested 175℃ Maximum Junction Temperature Rating  
FQA140N10 More Descriptions
N-Channel Power MOSFET, QFET®, 100V, 140A, 10mΩ, TO-3P
MOSFET, N-CH, 100V, 140A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 140A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Product Comparison
The three parts on the right have similar specifications to FQA140N10.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Pin Count
    Qualification Status
    View Compare
  • FQA140N10
    FQA140N10
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    3
    6.401g
    SILICON
    -55°C~175°C TJ
    Tube
    QFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    10mOhm
    Tin (Sn)
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    140A
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    75 ns
    N-Channel
    SWITCHING
    10m Ω @ 70A, 10V
    4V @ 250μA
    7900pF @ 25V
    140A Tc
    285nC @ 10V
    940ns
    10V
    ±25V
    360 ns
    350 ns
    140A
    4V
    25V
    100V
    560A
    18.9mm
    15.8mm
    5mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FQA13N50
    FQA13N50
    Fairchild/ON Semiconductor
    -
    -
    -
    Through Hole
    TO-3P-3, SC-65-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    2000
    -
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    1
    190W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    430m Ω @ 6.7A, 10V
    5V @ 250μA
    2300pF @ 25V
    13.4A Tc
    60nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    54A
    -
    -
    -
    -
    -
    -
    -
    NO
    SINGLE
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    500V
    13.5A
    0.48Ohm
    500V
    860 mJ
    -
    -
    FQA140N10 vs FQA13N50
  • FQA17N40
    FQA17N40
    Fairchild/ON Semiconductor
    -
    -
    -
    Through Hole
    TO-3P-3, SC-65-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    190W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    270m Ω @ 8.6A, 10V
    5V @ 250μA
    2.3pF @ 25V
    17.2A Tc
    60nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    68.8A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    400V
    17.2A
    0.27Ohm
    400V
    1000 mJ
    3
    COMMERCIAL
    FQA140N10 vs FQA17N40
  • FQA10N80
    FQA10N80
    Fairchild/ON Semiconductor
    -
    -
    -
    Through Hole
    TO-3P-3, SC-65-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    QFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    240W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    1.05 Ω @ 4.9A, 10V
    5V @ 250μA
    2.7pF @ 25V
    9.8A Tc
    71nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    39.2A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    SINGLE
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    800V
    9.8A
    -
    800V
    920 mJ
    3
    COMMERCIAL
    FQA140N10 vs FQA10N80
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for FQA140N10
Popular Search Part Number Related Keywords Search Tags

Latest News

  • 19 January 2024

    The Best Tutorial for ISO3082DWR

    Ⅰ. Overview of ISO3082DWRⅡ. Technical parameters of ISO3082DWRⅢ. What are the characteristics of ISO3082DWR?Ⅳ. How does ISO3082DWR work?Ⅴ. ISO3082DWR symbol, footprint and pin configurationⅥ. Layout principles of ISO3082DWRⅦ....
  • 22 January 2024

    What You Need to Know About the MMBT3904 Transistor

    Ⅰ. MMBT3904 descriptionⅡ. What is the pin configuration of MMBT3904?Ⅲ. Specifications of MMBT3904Ⅳ. Typical circuit schematic of MMBT3904Ⅴ. Where is MMBT3904 used?Ⅵ. Absolute maximum ratings of MMBT3904Ⅶ. What...
  • 22 January 2024

    LM317T Voltage Regulator: Functions, Usage, Applications and LM317T vs LM317

    Ⅰ. Overview of LM317TⅡ. What functions does LM317T have?Ⅲ. Technical parameters of LM317T voltage regulatorⅣ. Circuit of LM317T voltage regulatorⅤ. What is the difference between LM317T and LM317?Ⅵ....
  • 23 January 2024

    IRF3205 MOSFET Specifications, Package, Working Principle and Applications

    Ⅰ. Overview of IRF3205 MOSFETⅡ. Symbol, footprint and pin configuration of IRF3205 MOSFETⅢ. Specifications of IRF3205 MOSFETⅣ. Package of IRF3205 MOSFETⅤ. Working principle and structure of IRF3205 MOSFETⅥ....
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.