Diodes Incorporated FMMTA14TA
- Part Number:
- FMMTA14TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464665-FMMTA14TA
- Description:
- TRANS NPN DARL 40V 0.3A SOT23-3
- ECAD Model:
-
- Datasheet:
- FMMTA14TA
Diodes Incorporated FMMTA14TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMTA14TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation330mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating300mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMTA14
- Pin Count3
- Reference StandardCECC
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation330mW
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic900mV @ 100μA, 100mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage900mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)10V
- hFE Min10000
- Continuous Collector Current300mA
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMTA14TA Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 900mV.A VCE saturation (Max) of 900mV @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 300mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 300mA volts is possible.
FMMTA14TA Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 100MHz
FMMTA14TA Applications
There are a lot of Diodes Incorporated
FMMTA14TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 900mV.A VCE saturation (Max) of 900mV @ 100μA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 300mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 300mA volts is possible.
FMMTA14TA Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 100MHz
FMMTA14TA Applications
There are a lot of Diodes Incorporated
FMMTA14TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMTA14TA More Descriptions
FMMTA14 Series NPN 0.3 A 30 V SMT Silicon Darlington Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
DARLINGTON Transistor, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation
DARLINGTON TRANSISTOR, NPN, 40V, SOT-23; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:40V RoHS Compliant: Yes
DARLINGTON TRANSISTOR, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 330mW; DC Collector Current: 300mA; DC Current Gain hFE: 20000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Av Current Ic: 300mA; Collector Emitter Saturation Voltage Vce(on): 900mV; Continuous Collector Current Ic Max: 300mA; Current Ic @ Vce Sat: 100mA; Current Ic Continuous a Max: 300mA; Current Ic hFE: 10mA; Full Power Rating Temperature: 25°C; Hfe Min: 10000; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 330mW; Termination Type: Surface Mount Device; Transistor Type: Darlington; Voltage Vcbo: 40V
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
DARLINGTON Transistor, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:-; Power Dissipation
DARLINGTON TRANSISTOR, NPN, 40V, SOT-23; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:40V RoHS Compliant: Yes
DARLINGTON TRANSISTOR, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: -; Power Dissipation Pd: 330mW; DC Collector Current: 300mA; DC Current Gain hFE: 20000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Av Current Ic: 300mA; Collector Emitter Saturation Voltage Vce(on): 900mV; Continuous Collector Current Ic Max: 300mA; Current Ic @ Vce Sat: 100mA; Current Ic Continuous a Max: 300mA; Current Ic hFE: 10mA; Full Power Rating Temperature: 25°C; Hfe Min: 10000; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 330mW; Termination Type: Surface Mount Device; Transistor Type: Darlington; Voltage Vcbo: 40V
The three parts on the right have similar specifications to FMMTA14TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountReference StandardNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeFrequency - TransitionVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxMax Junction Temperature (Tj)FrequencyGain Bandwidth ProductView Compare
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FMMTA14TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3SMD/SMTEAR99Matte Tin (Sn) - annealedOther Transistors30V330mWDUALGULL WING260300mA40FMMTA143CECC1NPNSingle330mWSWITCHINGNPN - Darlington40V300mA20000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V100MHz900mV40V40V10V10000300mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free------------- -
13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3-EAR99Matte Tin (Sn)--625mWDUALGULL WING-----AEC-Q1011---SWITCHINGPNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V200MHz-----------ROHS3 Compliant-R-PDSO-G3SINGLE625mWPNP200MHz0.33 V760ns50ns20pF---
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3-EAR99Matte Tin (Sn) - annealedOther Transistors100V625mWDUALGULL WING260900mA40FMMT6343-1NPNSingle625mW-NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV100V120V12V-900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free----140MHz----150°C--
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3-EAR99Matte Tin (Sn) - annealed-100V330mWDUALGULL WING260500mA40FMMT415--1NPNSingle330mWSWITCHINGNPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV100V320V6V-500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------40MHz40MHz
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