Diodes Incorporated FMMT718TA
- Part Number:
- FMMT718TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585009-FMMT718TA
- Description:
- TRANS PNP 20V 1.5A SOT23-3
- Datasheet:
- FMMT718TA
Diodes Incorporated FMMT718TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT718TA.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- Max Power Dissipation625mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1.5A
- Frequency180MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT718
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Turn On Delay Time40 ns
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product180MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Turn-Off Delay Time670 ns
- Collector Emitter Voltage (VCEO)-20V
- Max Collector Current-1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 100mA 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic220mV @ 50mA, 1.5A
- Collector Emitter Breakdown Voltage-55V
- Current - Collector (Ic) (Max)1.5A
- Transition Frequency180MHz
- Collector Emitter Saturation Voltage-145mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)-20V
- Emitter Base Voltage (VEBO)-7V
- hFE Min30
- Max Junction Temperature (Tj)150°C
- Continuous Collector Current-1.5A
- Height1.1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT718TA Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -145mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 220mV @ 50mA, 1.5A.Maintaining the continuous collector voltage at -1.5A is essential for high efficiency.Keeping the emitter base voltage at -7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).180MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below -1.5A volts.
FMMT718TA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -145mV
the vce saturation(Max) is 220mV @ 50mA, 1.5A
the emitter base voltage is kept at -7V
the current rating of this device is -1.5A
a transition frequency of 180MHz
FMMT718TA Applications
There are a lot of Diodes Incorporated
FMMT718TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -145mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 220mV @ 50mA, 1.5A.Maintaining the continuous collector voltage at -1.5A is essential for high efficiency.Keeping the emitter base voltage at -7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).180MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below -1.5A volts.
FMMT718TA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -145mV
the vce saturation(Max) is 220mV @ 50mA, 1.5A
the emitter base voltage is kept at -7V
the current rating of this device is -1.5A
a transition frequency of 180MHz
FMMT718TA Applications
There are a lot of Diodes Incorporated
FMMT718TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT718TA More Descriptions
Trans GP BJT PNP 20V 1.5A 625mW 3-Pin SOT-23 T/R / TRANS PNP 20V 1.5A SOT23-3
FMMT718 Series PNP 1.5 A 20 V SMT Silicon Power Transistor - SOT-23-3
Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
PNP transistor SOT23, FMMT718TA | Diodes Inc FMMT718TA
Transistors - Bipolar (BJT) - Single TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Tape & Reel (TR) Surface Mount PNP 300 @ 100mA 2V 220mV @ 50mA, 1.5A -55°C~150°C TJ 100nA TRANS PNP 20V 1.5A SOT23-3
TRANSISTOR, PNP, REEL 3K; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:20V; Current Ic Continuous a Max:1.5A; Voltage, Vce Sat Max:220mV; Power Dissipation:625mW; Min Hfe:300; ft, ;RoHS Compliant: Yes
TRANSISTOR, PNP, REEL 3K; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 180MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1.5A; DC Current Gain hFE: 475hFE; Transistor Cas
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -1.5 / Collector-Emitter Voltage (Vceo) V = -20 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = -20 / Emitter-Base Voltage (Vebo) V = -7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 180 / Power Dissipation (Pd) mW = 625 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -40 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = -1 / Reflow Temperature Max. °C = 260
FMMT718 Series PNP 1.5 A 20 V SMT Silicon Power Transistor - SOT-23-3
Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon
PNP transistor SOT23, FMMT718TA | Diodes Inc FMMT718TA
Transistors - Bipolar (BJT) - Single TO-236-3, SC-59, SOT-23-3 1 (Unlimited) Tape & Reel (TR) Surface Mount PNP 300 @ 100mA 2V 220mV @ 50mA, 1.5A -55°C~150°C TJ 100nA TRANS PNP 20V 1.5A SOT23-3
TRANSISTOR, PNP, REEL 3K; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:20V; Current Ic Continuous a Max:1.5A; Voltage, Vce Sat Max:220mV; Power Dissipation:625mW; Min Hfe:300; ft, ;RoHS Compliant: Yes
TRANSISTOR, PNP, REEL 3K; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 180MHz; Power Dissipation Pd: 625mW; DC Collector Current: 1.5A; DC Current Gain hFE: 475hFE; Transistor Cas
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -1.5 / Collector-Emitter Voltage (Vceo) V = -20 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = -20 / Emitter-Base Voltage (Vebo) V = -7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 180 / Power Dissipation (Pd) mW = 625 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -40 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = -1 / Reflow Temperature Max. °C = 260
The three parts on the right have similar specifications to FMMT718TA.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusPolarityFrequency - TransitionView Compare
-
FMMT718TA15 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)3SMD/SMTEAR99Other Transistors-20V625mWDUALGULL WING260-1.5A180MHz40FMMT71831Single625mW40 nsSWITCHING180MHzPNPPNP670 ns-20V-1.5A300 @ 100mA 2V100nA220mV @ 50mA, 1.5A-55V1.5A180MHz-145mV20V-20V-7V30150°C-1.5A1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free--------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3-EAR99-100V625mWDUALGULL WING260900mA-40FMMT63431Single-----NPN - Darlington-960mV900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A100V----120V12V--900mA1mm3.05mm1.4mm--RoHS CompliantLead FreeMATTE TIN8541.21.00.95unknownR-PDSO-G3Not QualifiedNPN140MHz
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3-EAR99-150V625mWDUALGULL WING2601A-40FMMT625-1Single--SWITCHING135MHzNPNNPN-300mV1A300 @ 200mA 10V100nA300mV @ 50mA, 1A150V-135MHz--150V5V--1A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeMatte Tin (Sn) - annealed--R-PDSO-G3Not Qualified--
-
15 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3-EAR99-100V330mWDUALGULL WING260500mA40MHz40FMMT415-1Single330mW-SWITCHING40MHz-NPN - Avalanche Mode-100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V-40MHz500mV100V320V6V--500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn) - annealed----NPN-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
06 September 2023
A4988 Characteristics, Application and Basic Principle
A4988 is an efficient and commonly used stepper motor driver chip, widely used in 3D printing and CNC machine tools and other fields. We will discuss in depth... -
07 September 2023
What Is The Difference Between NE5532 And RC4558D?
Ⅰ. Overview of NE5532NE5532 is a dual operational amplifier chip with excellent performance and low noise characteristics. Its circuit design is similar to that of a common operational... -
07 September 2023
TPC8129 Internal Circuit, Specifications, Application and Marking
Ⅰ. Overview of TPC8129TPC8129 is a product of Toshiba, a Japanese comprehensive electronic and electrical company. It is a chip for LED driver circuits and is mainly used... -
12 September 2023
The Difference Between L293D and L298N
In this article we will explore the main differences between the L293D and L298N motor drivers. Both motor drives have their own unique features and applications. Understanding the...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.