Diodes Incorporated FMMT6517TA
- Part Number:
- FMMT6517TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068715-FMMT6517TA
- Description:
- TRANS NPN 350V 0.5A SOT23-3
- Datasheet:
- FMMT6517TA
Diodes Incorporated FMMT6517TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT6517TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Voltage - Rated DC350V
- Max Power Dissipation330mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT6517
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation330mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)350V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA 10V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
- Collector Emitter Breakdown Voltage350V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage350V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current500mA
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT6517TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
FMMT6517TA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
FMMT6517TA Applications
There are a lot of Diodes Incorporated
FMMT6517TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
FMMT6517TA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
FMMT6517TA Applications
There are a lot of Diodes Incorporated
FMMT6517TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT6517TA More Descriptions
FMMT6517 Series NPN 350 V 500 mA 350 mW High Voltage Transistor - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon
Trans Gp Bjt Npn 350V 0.5A 3-Pin Sot-23 T/r Rohs Compliant: Yes
NPN High Voltage Transistor SOT-23 | Diodes Inc FMMT6517TA
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon
Trans Gp Bjt Npn 350V 0.5A 3-Pin Sot-23 T/r Rohs Compliant: Yes
NPN High Voltage Transistor SOT-23 | Diodes Inc FMMT6517TA
The three parts on the right have similar specifications to FMMT6517TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodePin CountJESD-30 CodeQualification StatusPolarityFrequency - TransitionReference StandardView Compare
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FMMT6517TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed350V330mWDUALGULL WING260500mA50MHz40FMMT65171Single330mWSWITCHING50MHzNPNNPN350V500mA20 @ 50mA 10V50nA ICBO1V @ 5mA, 50mA350V50MHz1V350V350V5V500mA1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN100V625mWDUALGULL WING260900mA-40FMMT6341Single----NPN - Darlington960mV900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A100V---120V12V900mA1mm3.05mm1.4mm--RoHS CompliantLead Free8541.21.00.95unknown3R-PDSO-G3Not QualifiedNPN140MHz-
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - annealed150V625mWDUALGULL WING2601A-40FMMT6251Single-SWITCHING135MHzNPNNPN300mV1A300 @ 200mA 10V100nA300mV @ 50mA, 1A150V135MHz--150V5V1A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead Free---R-PDSO-G3Not Qualified---
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN30V330mWDUALGULL WING260300mA-40FMMTA131Single330mWSWITCHING--NPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V100MHz--40V10V300mA---No SVHC-RoHS CompliantLead Free8541.21.00.95unknown3-Not QualifiedNPN-CECC
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