Diodes Incorporated FMMT593TC
- Part Number:
- FMMT593TC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2467035-FMMT593TC
- Description:
- TRANS PNP 100V 1A SOT23-3
- Datasheet:
- FMMT593TC
Diodes Incorporated FMMT593TC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT593TC.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT593
- Number of Elements1
- Voltage100V
- Element ConfigurationSingle
- Current1A
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage100V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-300mV
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)-5V
- Continuous Collector Current-1A
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT593TC Overview
In this device, the DC current gain is 100 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 500mA.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).50MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
FMMT593TC Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 50MHz
FMMT593TC Applications
There are a lot of Diodes Incorporated
FMMT593TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 500mA.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).50MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
FMMT593TC Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 50MHz
FMMT593TC Applications
There are a lot of Diodes Incorporated
FMMT593TC applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT593TC More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
FMMT593 Series 100 V 1 A 500 mW Surface Mount PNP High Voltage Transistor SOT-23
Trans GP BJT PNP 100V 1A 500mW 3-Pin SOT-23 T/R
Trans, Pnp, 100V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT593TC
FMMT593 Series 100 V 1 A 500 mW Surface Mount PNP High Voltage Transistor SOT-23
Trans GP BJT PNP 100V 1A 500mW 3-Pin SOT-23 T/R
Trans, Pnp, 100V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT593TC
The three parts on the right have similar specifications to FMMT593TC.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodePin CountReference StandardJESD-30 CodeQualification StatusPolarityMax Breakdown VoltageView Compare
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FMMT593TC15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealedOther Transistors-100V500mWDUALGULL WING260-1A50MHz40FMMT5931100VSingle1A500mWSWITCHING50MHzPNPPNP100V1A100 @ 500mA 5V100nA300mV @ 50mA, 500mA100V50MHz-300mV120V-5V-1A1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----60V500mW---1A--FMMT451--Single---150MHz-NPN350mV1A50 @ 150mA 10V100nA ICBO350mV @ 15mA, 150mA60V-350mV80V5V1A1.1mm3mm1.4mmNo SVHC-RoHS CompliantLead Free--------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-80V330mWDUALGULL WING260500mA-40FMMTA061-Single---100MHzNPNNPN250mV500mA50 @ 10mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV80V4V500mA1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead Free8541.21.00.95unknown3CECC50002-240R-PDSO-G3Not Qualified--
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-100V330mWDUALGULL WING260500mA40MHz40FMMT4151-Single-330mWSWITCHING40MHz-NPN - Avalanche Mode100V500mA25 @ 10mA 10V100nA ICBO500mV @ 1mA, 10mA100V40MHz500mV320V6V500mA1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free------NPN100V
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