Fairchild/ON Semiconductor FMMT549
- Part Number:
- FMMT549
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2464635-FMMT549
- Description:
- TRANS PNP 30V 1A SUPERSOT-3
- Datasheet:
- FMMT549
Fairchild/ON Semiconductor FMMT549 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FMMT549.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-1A
- Frequency100MHz
- Base Part NumberFMMT549
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic750mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-750mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)-35V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Height970μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT549 Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -750mV.A VCE saturation (Max) of 750mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1A volts is possible.
FMMT549 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT549 Applications
There are a lot of ON Semiconductor
FMMT549 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -750mV.A VCE saturation (Max) of 750mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1A volts is possible.
FMMT549 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT549 Applications
There are a lot of ON Semiconductor
FMMT549 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT549 More Descriptions
Bipolar Transistors - BJT PNP Transistor Low Saturation
FMMT549 Series 30 V CE Breakdown 2 A PNP Low Saturation Transistor - SSOT-23
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 30V 1A 500mW 3-Pin SOT-23 T/R
RF TRANSISTOR, PNP, -30V 100MHZ SUPERSOT
RF Bipolar Transistor; Transistor Polarity:Dual P Channel; Package/Case:SuperSOT; DC Current Gain Min (hfe):40; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:30V; DC Collector Current:2A ;RoHS Compliant: Yes
FMMT549 Series 30 V CE Breakdown 2 A PNP Low Saturation Transistor - SSOT-23
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 30V 1A 500mW 3-Pin SOT-23 T/R
RF TRANSISTOR, PNP, -30V 100MHZ SUPERSOT
RF Bipolar Transistor; Transistor Polarity:Dual P Channel; Package/Case:SuperSOT; DC Current Gain Min (hfe):40; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; C-E Breakdown Voltage:30V; DC Collector Current:2A ;RoHS Compliant: Yes
The three parts on the right have similar specifications to FMMT549.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusPolarityFrequency - TransitionContinuous Collector CurrentReference StandardTransistor ApplicationCurrent - Collector (Ic) (Max)View Compare
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FMMT549ACTIVE (Last Updated: 6 days ago)23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-30V500mWDUALGULL WING-1A100MHzFMMT5491Single500mW100MHzPNPPNP30V1A100 @ 500mA 2V100nA ICBO750mV @ 200mA, 2A30V100MHz-750mV30V-35V-5V100970μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free--------------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-100V625mWDUALGULL WING900mA-FMMT6341Single---NPN - Darlington960mV900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A100V---120V12V-1mm3.05mm1.4mm--RoHS CompliantLead Free8541.21.00.95260unknown403R-PDSO-G3Not QualifiedNPN140MHz900mA---
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN-30V330mWDUALGULL WING300mA-FMMTA131Single330mW--NPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V100MHz--40V10V----No SVHC-RoHS CompliantLead Free8541.21.00.95260unknown403-Not QualifiedNPN-300mACECCSWITCHING-
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Matte Tin (Sn) - annealedOther Transistors-12V625mW---2.5A-FMMT717-Single-110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V-1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead Free----3-----2.5A--2.5A
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