Diodes Incorporated FMMT451TA
- Part Number:
- FMMT451TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068745-FMMT451TA
- Description:
- TRANS NPN 60V 1A SOT23-3
- Datasheet:
- FMMT451TA
Diodes Incorporated FMMT451TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT451TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Voltage - Rated DC60V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT451
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 150mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic350mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage350mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current1A
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT451TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 15mA, 150mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
FMMT451TA Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FMMT451TA Applications
There are a lot of Diodes Incorporated
FMMT451TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 15mA, 150mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
FMMT451TA Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FMMT451TA Applications
There are a lot of Diodes Incorporated
FMMT451TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT451TA More Descriptions
In a Pack of 25, Diodes Inc FMMT451TA NPN Transistor, 1 A, 60 V, 3-Pin SOT-23
FMMT451 Series NPN 1 A 60 V SMT Silicon High Performance Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 60V 1A 500mW 3-Pin SOT-23 T/R
Trans, Npn, 60V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT451TA
Transistor NPN FMMT451/FMMT451TA ZETEX Ampere=1 V=60 SOt23
FMMT451 Series NPN 1 A 60 V SMT Silicon High Performance Transistor - SOT-23
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 60V 1A 500mW 3-Pin SOT-23 T/R
Trans, Npn, 60V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT451TA
Transistor NPN FMMT451/FMMT451TA ZETEX Ampere=1 V=60 SOt23
The three parts on the right have similar specifications to FMMT451TA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodePin CountReference StandardQualification StatusPolaritySubcategoryCurrent - Collector (Ic) (Max)Frequency - TransitionMax Junction Temperature (Tj)View Compare
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FMMT451TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed60V500mWDUALGULL WING2601A150MHz40FMMT4511Single500mWSWITCHING150MHzNPNNPN60V1A50 @ 150mA 10V100nA ICBO350mV @ 15mA, 150mA60V150MHz350mV60V80V5V1A1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN30V330mWDUALGULL WING260300mA-40FMMTA131Single330mWSWITCHING--NPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V100MHz--40V10V300mA---No SVHC-RoHS CompliantLead Free8541.21.00.95unknown3CECCNot QualifiedNPN----
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Matte Tin (Sn) - annealed-12V625mW----2.5A--FMMT717-Single--110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V-2.5A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead Free--3---Other Transistors2.5A--
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed100V625mWDUALGULL WING260900mA-40FMMT6341Single625mW---NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV100V120V12V900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free--3--NPNOther Transistors-140MHz150°C
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