Fairchild/ON Semiconductor FGY75N60SMD
- Part Number:
- FGY75N60SMD
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2494607-FGY75N60SMD
- Description:
- IGBT 600V 150A 750W POWER-247
- Datasheet:
- FGY75N60SMD
Fairchild/ON Semiconductor FGY75N60SMD technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGY75N60SMD.
- Lifecycle StatusACTIVE (Last Updated: 8 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3 Variant
- Number of Pins3
- Weight7.629g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW CONDUCTION LOSS
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation750W
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max750W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current150A
- Reverse Recovery Time55 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.9V
- Turn On Time76 ns
- Test Condition400V, 75A, 3 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 75A
- Turn Off Time-Nom (toff)161 ns
- IGBT TypeField Stop
- Gate Charge248nC
- Current - Collector Pulsed (Icm)225A
- Td (on/off) @ 25°C24ns/136ns
- Switching Energy2.3mJ (on), 770μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Fall Time-Max (tf)29ns
- Height20.32mm
- Length15.87mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FGY75N60SMD Description
The FGY75N60SMD is a 1000V Field Stop IGBT with high current capability. This new IGBT is suitable for soft switching applications such as induction cookers and inventoried microwave ovens. FS IGBT provides lower VCE (sat) during on-state and lowers switching losses during the turn-off instant. However, since it doesn't include an intrinsic body diode in common with all other IGBT types of IGBTs, it is generally packaged with an additional Fast Recovery Diode (FRD) for most switching applications. This product is general usage and suitable for many different applications.
FGY75N60SMD Features Low saturation voltage High input impedance High-speed switching Built-in fast recovery diode
FGY75N60SMD Applications Power Management, Alternative Energy
FGY75N60SMD Features Low saturation voltage High input impedance High-speed switching Built-in fast recovery diode
FGY75N60SMD Applications Power Management, Alternative Energy
FGY75N60SMD More Descriptions
Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube / IGBT 600V 150A 750W POWER-247
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
IGBT, FIELD STOP, 600V,75A,POWER-247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:Power 247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
IGBT, FIELD STOP, 600V,75A,POWER-247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:Power 247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
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