FGY75N60SMD

Fairchild/ON Semiconductor FGY75N60SMD

Part Number:
FGY75N60SMD
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2494607-FGY75N60SMD
Description:
IGBT 600V 150A 750W POWER-247
ECAD Model:
Datasheet:
FGY75N60SMD

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Specifications
Fairchild/ON Semiconductor FGY75N60SMD technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGY75N60SMD.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 hours ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3 Variant
  • Number of Pins
    3
  • Weight
    7.629g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOW CONDUCTION LOSS
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    750W
  • Number of Elements
    1
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    750W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    150A
  • Reverse Recovery Time
    55 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.9V
  • Turn On Time
    76 ns
  • Test Condition
    400V, 75A, 3 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 75A
  • Turn Off Time-Nom (toff)
    161 ns
  • IGBT Type
    Field Stop
  • Gate Charge
    248nC
  • Current - Collector Pulsed (Icm)
    225A
  • Td (on/off) @ 25°C
    24ns/136ns
  • Switching Energy
    2.3mJ (on), 770μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    29ns
  • Height
    20.32mm
  • Length
    15.87mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FGY75N60SMD Description The FGY75N60SMD is a 1000V Field Stop IGBT with high current capability. This new IGBT is suitable for soft switching applications such as induction cookers and inventoried microwave ovens. FS IGBT provides lower VCE (sat) during on-state and lowers switching losses during the turn-off instant. However, since it doesn't include an intrinsic body diode in common with all other IGBT types of IGBTs, it is generally packaged with an additional Fast Recovery Diode (FRD) for most switching applications. This product is general usage and suitable for many different applications.

FGY75N60SMD Features Low saturation voltage High input impedance High-speed switching Built-in fast recovery diode

FGY75N60SMD Applications Power Management, Alternative Energy

FGY75N60SMD More Descriptions
Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube / IGBT 600V 150A 750W POWER-247
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
IGBT, FIELD STOP, 600V,75A,POWER-247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:Power 247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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