Fairchild/ON Semiconductor FGPF10N60UNDF
- Part Number:
- FGPF10N60UNDF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2854546-FGPF10N60UNDF
- Description:
- IGBT 600V 20A 42W TO-220F
- ECAD Model:
-
- Datasheet:
- FGPF10N60UNDF
Fairchild/ON Semiconductor FGPF10N60UNDF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGPF10N60UNDF.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time5 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation42W
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionISOLATED
- Input TypeStandard
- Power - Max42W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current20A
- Reverse Recovery Time37.7 ns
- JEDEC-95 CodeTO-220AB
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2V
- Turn On Time15.4 ns
- Test Condition400V, 10A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 10A
- Turn Off Time-Nom (toff)89.3 ns
- IGBT TypeNPT
- Gate Charge37nC
- Current - Collector Pulsed (Icm)30A
- Td (on/off) @ 25°C8ns/52.2ns
- Switching Energy150μJ (on), 50μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max8.5V
- Fall Time-Max (tf)24.8ns
- Height16.07mm
- Length10.36mm
- Width4.9mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FGPF10N60UNDF Description
ON Semiconductor's FGPF10N60UNDF is an IGBT Transistor with a voltage of 600V from the manufacturer. ON Semiconductor's NPT IGBTs, which use superior NPT IGBT technology, provide the best performance for low-power inverter-driven applications that require low-losses and short-circuit ruggedness, such as sewing machines, CNC, motor control, and home appliances.
FGPF10N60UNDF Features
Short circuit rated 10μs
High current capability
High input impedance
Fast switching
RoHS compliant
FGPF10N60UNDF Applications
Motion Control
Home Appliance
ON Semiconductor's FGPF10N60UNDF is an IGBT Transistor with a voltage of 600V from the manufacturer. ON Semiconductor's NPT IGBTs, which use superior NPT IGBT technology, provide the best performance for low-power inverter-driven applications that require low-losses and short-circuit ruggedness, such as sewing machines, CNC, motor control, and home appliances.
FGPF10N60UNDF Features
Short circuit rated 10μs
High current capability
High input impedance
Fast switching
RoHS compliant
FGPF10N60UNDF Applications
Motion Control
Home Appliance
FGPF10N60UNDF More Descriptions
Trans IGBT Chip N-CH 600V 20A 42000mW 3-Pin(3 Tab) TO-220F Rail
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
The three parts on the right have similar specifications to FGPF10N60UNDF.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryMax Power DissipationNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthRadiation HardeningRoHS StatusVoltage - Rated DCCurrent RatingRise TimeLead FreeBase Part NumberPower DissipationView Compare
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FGPF10N60UNDFACTIVE (Last Updated: 1 week ago)5 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTube2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)8541.29.00.95Insulated Gate BIP Transistors42W1SingleISOLATEDStandard42WMOTOR CONTROLN-CHANNEL600V20A37.7 nsTO-220AB600V2V15.4 ns400V, 10A, 10 Ω, 15V2.45V @ 15V, 10A89.3 nsNPT37nC30A8ns/52.2ns150μJ (on), 50μJ (off)20V8.5V24.8ns16.07mm10.36mm4.9mmNoROHS3 Compliant------- -
--Through HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTube---Obsolete1 (Unlimited)-----49.2W-Single-Standard---300V---300V---1.5V @ 15V, 20A-Trench125nC160A---------RoHS Compliant------
-
--Through HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTube---Obsolete1 (Unlimited)-----52W-Single-Standard---300V---300V---1.5V @ 15V, 20A--71nC160A---------RoHS Compliant300V70A83nsLead Free--
-
--Through HoleThrough HoleTO-220-3 Full Pack3---55°C~150°C TJTube---Obsolete1 (Unlimited)-----46W-Single-Standard---300V---300V1.5V--1.5V @ 15V, 10A--39nC80A---------RoHS Compliant---Lead FreeFGPF30N3046W
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