Fairchild/ON Semiconductor FGH50N6S2D

Name: FGH50N6S2D
Brand: Fairchild/ON Semiconductor
SKU: 2496706-FGH50N6S2D
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FGH50N6S2D

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2496706-FGH50N6S2D

Description:: IGBT 600V 75A 463W TO247

ECAD Model:

Datasheet:: FGH50N6S2D

Specifications

Fairchild/ON Semiconductor FGH50N6S2D technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGH50N6S2D.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 5 days ago)
Factory Lead Time
4 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
463W
Current Rating
75A
Number of Elements
1
Element Configuration
Single
Power Dissipation
463W
Input Type
Standard
Transistor Application
POWER CONTROL
Rise Time
15ns
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
75A
Reverse Recovery Time
55ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Turn On Time
28 ns
Test Condition
390V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 30A
Turn Off Time-Nom (toff)
180 ns
Gate Charge
70nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
13ns/55ns
Switching Energy
260μJ (on), 250μJ (off)
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FGH50N6S2D Description
A 600V N-channel IGBT with an anti-parallel stealth diode is the FGH50N6S2D. The SMPS II series combines the SMPS IGBTs' high switching speed with lower gate charge, plateau voltage, and avalanche capabilities (UIS). This LGC gadget reduces gate drive power consumption by reducing delay times. This device is appropriate for high-voltage switched-mode power supply applications that require minimal conduction loss, quick switching times, and UIS functionality. Power factor correction (PFC) circuits, full-bridge topologies, half-bridge topologies, push-pull circuits, uninterruptible power supply, and zero voltage and zero current switching circuits all benefit from SMPS II LGC devices. This product is intended for general use and can be used in a variety of situations.

FGH50N6S2D Features
100kHz Operation at 390V, 40A
200kHZ Operation at 390V, 25A
600V Switching SOA capability
90ns Fall time
UIS Rated

FGH50N6S2D Applications
Power Management
Industrial
DC-DC Conversion
Switch application

FGH50N6S2D More Descriptions

FGH50N6S2D Series 600 V 75 A SMT 600V SMPS II Series N-Channel IGBT - TO-247
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Fall Time Typ:50ns; Fall Time tf:50ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Pulsed Current Icm:240A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392 Product Highlights: 100kHz Operation at 390V, 40A 200kHZ Operation at 390V, 25A 600V Switching SOA Capability Typical Fall Time. . . . . . 90ns at TJ = 125C Low Gate Charge. . . . . . 70nC at VGE = 15V Low Plateau Voltage. . . . . . 6.5V Typical UIS Rated. . . . . . 480mJ Low Conduction Loss

Certification