Fairchild/ON Semiconductor FGB40N60SM
- Part Number:
- FGB40N60SM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2854527-FGB40N60SM
- Description:
- IGBT 600V 80A 349W D2PAK
- ECAD Model:
-
- Datasheet:
- FGB40N60SM
Fairchild/ON Semiconductor FGB40N60SM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGB40N60SM.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight1.31247g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation349W
- Terminal FormGULL WING
- Base Part NumberFGB40N60
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Rise Time-Max28ns
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max349W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current80A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.3V
- Max Breakdown Voltage600V
- Turn On Time37 ns
- Test Condition400V, 40A, 6 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 40A
- Turn Off Time-Nom (toff)132 ns
- IGBT TypeField Stop
- Gate Charge119nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C12ns/92ns
- Switching Energy870μJ (on), 260μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Fall Time-Max (tf)17ns
- Height4.83mm
- Length10.67mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FGB40N60SM Description
ON Semiconductor's new field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for welder and PFC applications that require low conduction and switching losses. FGB40N60SM has a maximum power dissipation of 349W and an operating temperature of -55°C175°C TJ. The FGB40N60SM has three pins and is packaged in a Tape & Reel (TR) format.
FGB40N60SM Features
Maximum junction temperature: TJ =175 °C
Positive temperaure co-efficient for an easy parallel operating
High current capability
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC =40A
Fast switching: EOFF =6.5uJ/A
Tightened parameter distribution
RoHS compliant
IR reflow only
FGB40N60SM Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
ON Semiconductor's new field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for welder and PFC applications that require low conduction and switching losses. FGB40N60SM has a maximum power dissipation of 349W and an operating temperature of -55°C175°C TJ. The FGB40N60SM has three pins and is packaged in a Tape & Reel (TR) format.
FGB40N60SM Features
Maximum junction temperature: TJ =175 °C
Positive temperaure co-efficient for an easy parallel operating
High current capability
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC =40A
Fast switching: EOFF =6.5uJ/A
Tightened parameter distribution
RoHS compliant
IR reflow only
FGB40N60SM Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FGB40N60SM More Descriptions
Trans IGBT Chip N-CH 600V 80A 3-Pin(2 Tab) D2PAK T/R
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-263AB
FGB40N60SM Series 600 V 80 A 349 W Field Stop Surface Mount IGBT - TO-263-3
Fs2Pigbt To263 40A 600V/Reel |Onsemi FGB40N60SM
INSULATED GATE BIPOLAR TRANSISTO
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential.
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-263AB
FGB40N60SM Series 600 V 80 A 349 W Field Stop Surface Mount IGBT - TO-263-3
Fs2Pigbt To263 40A 600V/Reel |Onsemi FGB40N60SM
INSULATED GATE BIPOLAR TRANSISTO
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder and PFC applications where low conduction and switching losses are essential.
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