Fairchild/ON Semiconductor FGA120N30DTU

Name: FGA120N30DTU
Brand: Fairchild/ON Semiconductor
SKU: 3554885-FGA120N30DTU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FGA120N30DTU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3554885-FGA120N30DTU

Description:: IGBT 300V 120A 290W TO3P

ECAD Model:

Datasheet:: FGA120N30D

Specifications

Fairchild/ON Semiconductor FGA120N30DTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGA120N30DTU.

Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
290W
Reverse Recovery Time
21ns
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
120A
Vce(on) (Max) @ Vge, Ic
1.4V @ 15V, 25A
Gate Charge
120nC
Current - Collector Pulsed (Icm)
300A

Description

FGA120N30DTU Description
FGA120N30DTU belongs to the family of 300V PDP IGBTs provided by ON Semiconductor. Low conduction and switching loss can be ensured based on the Unified IGBT Technology. It is characterized by high current capability, low saturation voltage, and high input impedance. As a result, the FGA120N30DTU IGBT is well suited for PDP applications requiring low conduction loss.

FGA120N30DTU Features
High current capability Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A High input impedance Package: TO-3P

FGA120N30DTU Applications
PDP applications requiring low conduction loss

FGA120N30DTU More Descriptions

Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 1.4V @ 15V 25A 120A 290W 21ns
IGBT, PDP, 300V, TO-3P; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 300V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Op
IGBT, PDP, 300V, TO-3P; Transistor type:IGBT; Voltage, Vces:300V; Current, Ic continuous a max:120A; Voltage, Vce sat max:1.4V; Power dissipation:290W; Package/Case:TO-3P; Current, Ic @ Vce sat:25A; Current, Icm pulsed:300A; Pin RoHS Compliant: Yes
IGBT, PDP, 300V, TO-3P; DC Collector Current:120A; Collector Emitter Voltage Vces:1.4V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:300V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic @ Vce Sat:25A; Current Ic Continuous a Max:120A; Current Temperature:25°C; Fall Time tf:130ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.43°C/W; No. of Transistors:1; Package / Case:TO-3P; Pin Configuration:With flywheel diode; Power Dissipation Max:290W; Power Dissipation Pd:290W; Pulsed Current Icm:300A; Rise Time:270ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:300V

Product Comparison

The three parts on the right have similar specifications to FGA120N30DTU.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Input Type

Power - Max

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Vce(on) (Max) @ Vge, Ic

Gate Charge

Current - Collector Pulsed (Icm)

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Max Power Dissipation

Number of Elements

Element Configuration

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Turn On Time

Turn Off Time-Nom (toff)

IGBT Type

Radiation Hardening

RoHS Status

Test Condition

Td (on/off) @ 25°C

Switching Energy

Subcategory

Voltage - Rated DC

Current Rating

Power Dissipation

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Collector Emitter Saturation Voltage

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

REACH SVHC

Lead Free

View Compare
FGA120N30DTU

Fairchild/ON Semiconductor

Through Hole

TO-3P-3, SC-65-3

TO-3P

-55°C~150°C TJ

Tube

2006

Obsolete

1 (Unlimited)

Standard

290W

21ns

300V

120A

1.4V @ 15V, 25A

120nC

300A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FGA180N33ATTU

Fairchild/ON Semiconductor

Through Hole

TO-3P-3, SC-65-3

-

-55°C~150°C TJ

Tube

-

Not For New Designs

1 (Unlimited)

Standard

390W

27 ns

-

-

1.4V @ 15V, 40A

169nC

450A

ACTIVE, NOT REC (Last Updated: 3 days ago)

44 Weeks

Through Hole

3

6.401g

SILICON

e3

yes

3

EAR99

MATTE TIN

LOW CONDUCTION LOSS

8541.29.00.95

390W

1

Single

POWER CONTROL

N-CHANNEL

330V

180A

330V

101 ns

362 ns

Trench

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FGA120N30DTU vs FGA180N33ATTU
FGA15N120ANDTU

Fairchild/ON Semiconductor

Through Hole

TO-3P-3, SC-65-3

TO-3PN

-55°C~150°C TJ

Tube

2003

Obsolete

1 (Unlimited)

Standard

200W

330ns

1200V

24A

3.2V @ 15V, 15A

120nC

45A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NPT

-

-

600V, 15A, 20Ohm, 15V

90ns/310ns

3.27mJ (on), 600μJ (off)

-

-

-

-

-

-

-

-

-

-

-

-

FGA120N30DTU vs FGA15N120ANDTU
FGA15N120ANTDTU

Fairchild/ON Semiconductor

Through Hole

TO-3P-3, SC-65-3

-

-55°C~150°C TJ

Tube

2006

Obsolete

1 (Unlimited)

Standard

-

330ns

1200V

-

2.4V @ 15V, 15A

120nC

45A

-

-

Through Hole

3

-

-

-

yes

-

EAR99

-

-

-

186W

-

Single

-

N-CHANNEL

1.2kV

30A

1.2kV

-

-

NPT and Trench

-

RoHS Compliant

600V, 15A, 10 Ω, 15V

15ns/160ns

3mJ (on), 600μJ (off)

Insulated Gate BIP Transistors

1.2kV

15A

186W

15A

1.2kV

2.4V

20V

8.5V

180ns

No SVHC

Lead Free

FGA120N30DTU vs FGA15N120ANTDTU