Fairchild/ON Semiconductor FDZ375P
- Part Number:
- FDZ375P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2480589-FDZ375P
- Description:
- MOSFET P-CH 20V WLCSP 1X1
- Datasheet:
- FDZ375P
Fairchild/ON Semiconductor FDZ375P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDZ375P.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case4-XFBGA, WLCSP
- Number of Pins4
- Weight68.4mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormBALL
- Number of Elements1
- Power Dissipation-Max1.7W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.7W
- Turn On Delay Time5.3 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs78m Ω @ 2A, 4.5V
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds865pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.7A Ta
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Rise Time8.2ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)84 ns
- Turn-Off Delay Time138 ns
- Continuous Drain Current (ID)3.7A
- Threshold Voltage-500mV
- Gate to Source Voltage (Vgs)8V
- Drain-source On Resistance-Max0.078Ohm
- Drain to Source Breakdown Voltage-20V
- Nominal Vgs-500 mV
- Height400μm
- Length1mm
- Width1mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDZ375P Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 865pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 138 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.In this case, the threshold voltage of the transistor is -500mV, which means that it will not activate any of its functions when its threshold voltage reaches -500mV.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (1.5V 4.5V), this device contributes to a reduction in overall power consumption.
FDZ375P Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 138 ns
a threshold voltage of -500mV
a 20V drain to source voltage (Vdss)
FDZ375P Applications
There are a lot of ON Semiconductor
FDZ375P applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 865pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 138 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.In this case, the threshold voltage of the transistor is -500mV, which means that it will not activate any of its functions when its threshold voltage reaches -500mV.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (1.5V 4.5V), this device contributes to a reduction in overall power consumption.
FDZ375P Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 138 ns
a threshold voltage of -500mV
a 20V drain to source voltage (Vdss)
FDZ375P Applications
There are a lot of ON Semiconductor
FDZ375P applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
FDZ375P More Descriptions
P-Channel PowerTrench® Thin WL-CSP MOSFET, 1.5V Specified, -20V, -3.7A, 78mΩ
MOSFET, P CH, 20V, 3.7A, WL-CSP 1X1; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:WL-CSP; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ375P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
MOSFET, P CH, 20V, 3.7A, WL-CSP 1X1; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:WL-CSP; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ375P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
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