FDS8840NZ

Fairchild/ON Semiconductor FDS8840NZ

Part Number:
FDS8840NZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2484281-FDS8840NZ
Description:
MOSFET N-CH 40V 18.6A 8-SOIC
ECAD Model:
Datasheet:
FDS8840NZ

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Specifications
Fairchild/ON Semiconductor FDS8840NZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8840NZ.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2009
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.5m Ω @ 18.6A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7535pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    18.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    144nC @ 10V
  • Rise Time
    13ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    57 ns
  • Continuous Drain Current (ID)
    18.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0045Ohm
  • Drain to Source Breakdown Voltage
    40V
  • Feedback Cap-Max (Crss)
    670 pF
  • Height
    1.575mm
  • Length
    4.9mm
  • Width
    3.9mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDS8840NZ Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7535pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 57 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDS8840NZ Features
a continuous drain current (ID) of 18.6A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 57 ns


FDS8840NZ Applications
There are a lot of ON Semiconductor
FDS8840NZ applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDS8840NZ More Descriptions
N-Channel 40 V 4.5 mOhm Surface Mount PwerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 40V 18.6A 8-Pin SOIC N T/R - Tape and Reel
N-Channel PowerTrench® MOSFET 40V, 18.6A, 4.5mΩ
The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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