Fairchild/ON Semiconductor FDS8840NZ
- Part Number:
- FDS8840NZ
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2484281-FDS8840NZ
- Description:
- MOSFET N-CH 40V 18.6A 8-SOIC
- Datasheet:
- FDS8840NZ
Fairchild/ON Semiconductor FDS8840NZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8840NZ.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2009
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.5m Ω @ 18.6A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7535pF @ 20V
- Current - Continuous Drain (Id) @ 25°C18.6A Ta
- Gate Charge (Qg) (Max) @ Vgs144nC @ 10V
- Rise Time13ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time57 ns
- Continuous Drain Current (ID)18.6A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0045Ohm
- Drain to Source Breakdown Voltage40V
- Feedback Cap-Max (Crss)670 pF
- Height1.575mm
- Length4.9mm
- Width3.9mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDS8840NZ Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7535pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 57 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDS8840NZ Features
a continuous drain current (ID) of 18.6A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 57 ns
FDS8840NZ Applications
There are a lot of ON Semiconductor
FDS8840NZ applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7535pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 57 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDS8840NZ Features
a continuous drain current (ID) of 18.6A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 57 ns
FDS8840NZ Applications
There are a lot of ON Semiconductor
FDS8840NZ applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDS8840NZ More Descriptions
N-Channel 40 V 4.5 mOhm Surface Mount PwerTrench Mosfet - SOIC-8
Trans MOSFET N-CH 40V 18.6A 8-Pin SOIC N T/R - Tape and Reel
N-Channel PowerTrench® MOSFET 40V, 18.6A, 4.5mΩ
The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Trans MOSFET N-CH 40V 18.6A 8-Pin SOIC N T/R - Tape and Reel
N-Channel PowerTrench® MOSFET 40V, 18.6A, 4.5mΩ
The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
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