FDS8690

Fairchild/ON Semiconductor FDS8690

Part Number:
FDS8690
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481730-FDS8690
Description:
MOSFET N-CH 30V 14A 8-SOIC
ECAD Model:
Datasheet:
FDS8690

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Specifications
Fairchild/ON Semiconductor FDS8690 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS8690.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.6m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1680pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    14A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Rise Time
    1.8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    26 ns
  • Continuous Drain Current (ID)
    14A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0076Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Nominal Vgs
    1.6 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS8690 Description
The FDS8690 MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. It was designed with a low gate charge, a low rDS(on), and a quick switching speed in mind.

FDS8690 Features
Vgs = 10V, I= 14A, Max Qs(o n) = 7.6mQ, Vgs = 10V
Vgs = 4.5V, I= 11.5A, Maxds(o n) = 114mQ
Exceptional performance Trench technology no logy for extremely low DS(on) and quick switching
The gate charge is really inexpensive.
High-capacity han dli ng and high-power capability
Rg was tested 100% of the time.
RoHS Complia nt is an acronym for "Restriction of Hazardous Substances" (RoHS).

FDS8690 Applications
a laptop's CPU power supply
Synchronous rectifier is a term that refers to a type of rectifier that is synchronized.

FDS8690 More Descriptions
N-Channel 30 V 7.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ
Trans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R - Tape and Reel
MOSFET, N CH, 30V, 14A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0063ohm; Rds; Available until stocks are exhausted Alternative available
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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