Fairchild/ON Semiconductor FDS4935BZ

Name: FDS4935BZ
Brand: Fairchild/ON Semiconductor
SKU: 2847543-FDS4935BZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS4935BZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2847543-FDS4935BZ

Description:: MOSFET 2P-CH 30V 6.9A 8-SOIC

ECAD Model:

Datasheet:: FDS4935BZ

Specifications

Fairchild/ON Semiconductor FDS4935BZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS4935BZ.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
22MOhm
Terminal Finish
Tin (Sn)
Additional Feature
ESD PROTECTION
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
1.6W
Terminal Form
GULL WING
Current Rating
-6.9A
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
12 ns
Power - Max
900mW
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1360pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6.9A
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Rise Time
13ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
68 ns
Continuous Drain Current (ID)
-6.9A
Threshold Voltage
-1.9V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
-30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Nominal Vgs
1.9 V
Height
1.75mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS4935BZ Description This P-channel MOSFET is designed to improve the overall efficiency of the DC/DC converter using synchronous or conventional switch PWM controllers and battery chargers.These MOSFET have faster switching speed and lower gate charge than other MOSFET with similar RDS specification.The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.
FDS4935BZ Features ¨C6.9 A, ¨C30 V RDS(ON) = 22 m|? @ VGS = ¨C10 V RDS(ON) = 35 m @ VGS = ¨C 4.5 V Extended VGSS range (¨C25V) for battery applications ESD protection diode (note 3) High performance trench technology for extremelylow RDS(ON) High power and current handling capability
FDS4935BZ Applications This product is general usage and suitable for many different applications.

FDS4935BZ More Descriptions

Transistor MOSFET Array Dual P-CH 30V 6.9A 8-Pin SOIC T/RAvnet Japan
Dual P-Channel 30 V 1.6 W 40 nC Silicon Surface Mount Mosfet - SOIC-8
Dual P-Channel PowerTrench® MOSFET, -30V, -6.9A 22mΩ
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Product Comparison

The three parts on the right have similar specifications to FDS4935BZ.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Current Rating

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Power - Max

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

FET Technology

Max Junction Temperature (Tj)

FET Feature

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Terminal Position

Polarity/Channel Type

Avalanche Energy Rating (Eas)

View Compare
FDS4935BZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

10 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

8

SMD/SMT

EAR99

22MOhm

Tin (Sn)

ESD PROTECTION

Other Transistors

-30V

1.6W

GULL WING

-6.9A

2

2

Dual

ENHANCEMENT MODE

1.6W

12 ns

900mW

2 P-Channel (Dual)

SWITCHING

22m Ω @ 6.9A, 10V

3V @ 250μA

1360pF @ 15V

6.9A

40nC @ 10V

13ns

30V

13 ns

68 ns

-6.9A

-1.9V

25V

-30V

-30V

METAL-OXIDE SEMICONDUCTOR

150°C

Logic Level Gate

1.9 V

1.75mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
FDS4897C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

12 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2005

e3

yes

Active

1 (Unlimited)

8

-

EAR99

29MOhm

-

-

Other Transistors

-

900mW

GULL WING

-

2

-

-

ENHANCEMENT MODE

2W

-

-

N and P-Channel

SWITCHING

29m Ω @ 6.2A, 10V

3V @ 250μA

760pF @ 20V

6.2A 4.4A

20nC @ 10V

15ns

-

18 ns

45 ns

4.4A

1.9V

20V

40V

-

METAL-OXIDE SEMICONDUCTOR

-

Logic Level Gate

-

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

DUAL

N-CHANNEL AND P-CHANNEL

-

FDS4935BZ vs FDS4897C
FDS4953

Fairchild/ON Semiconductor

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2002

-

-

Obsolete

1 (Unlimited)

-

SMD/SMT

-

-

-

-

-

-30V

900mW

-

-5A

2

-

Dual

-

2W

7 ns

-

2 P-Channel (Dual)

-

55m Ω @ 5A, 10V

3V @ 250μA

528pF @ 15V

5A

9nC @ 5V

13ns

30V

9 ns

14 ns

-5A

-1.7V

20V

-30V

-30V

-

-

Logic Level Gate

-1.7 V

1.5mm

5mm

4mm

No SVHC

-

RoHS Compliant

Lead Free

-

-

-

-

FDS4935BZ vs FDS4953
FDS4559

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2002

e3

yes

Active

1 (Unlimited)

8

SMD/SMT

EAR99

55MOhm

-

-

Other Transistors

-

2W

GULL WING

4.5A

2

2

Dual

ENHANCEMENT MODE

2W

-

1W

N and P-Channel

SWITCHING

55m Ω @ 4.5A, 10V

3V @ 250μA

650pF @ 25V

4.5A 3.5A

18nC @ 10V

10ns

-

12 ns

19 ns

4.5A

2.2V

20V

60V

60V

METAL-OXIDE SEMICONDUCTOR

175°C

Logic Level Gate

2.2 V

1.75mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

-

N-CHANNEL AND P-CHANNEL

90 mJ

FDS4935BZ vs FDS4559