Fairchild/ON Semiconductor FDS4559

Name: FDS4559
Brand: Fairchild/ON Semiconductor
SKU: 2847564-FDS4559
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS4559

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2847564-FDS4559

Description:: MOSFET N/P-CH 60V 4.5A/3.5A 8-SO

ECAD Model:

Datasheet:: FDS4559

Specifications

Fairchild/ON Semiconductor FDS4559 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS4559.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
187mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
55MOhm
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Form
GULL WING
Current Rating
4.5A
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Power - Max
1W
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
55m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.5A 3.5A
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
10ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
12 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
4.5A
Threshold Voltage
2.2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Avalanche Energy Rating (Eas)
90 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
175°C
FET Feature
Logic Level Gate
Nominal Vgs
2.2 V
Height
1.75mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The ON SEMICONDUCTOR FDS4559 is a dual N/P channel MOSFET array in an 8-pin SOIC package. This device is designed to provide high-speed switching and low on-resistance in a wide range of applications. It features a maximum drain-source voltage of 60V, a maximum drain current of 4A, and a maximum gate-source voltage of ±20V. The FDS4559 is ideal for use in power management, motor control, and other high-speed switching applications. It is RoHS compliant and halogen-free, making it an environmentally friendly choice. The FDS4559 is a reliable and cost-effective solution for a variety of applications.

FDS4559 More Descriptions

MOSFET N/P-CH 60V 4.5A/3.5A 8-SO / Trans MOSFET N/P-CH 60V 4.5A/3.5A 8-Pin SOIC T/R
N/P-Channel 60 V 55/105 mO Complementary PowerTrench Mosfet - SOIC-8
ON SEMICONDUCTOR - FDS4559 - DUAL N/P CHANNEL MOSFET, 60V, SOIC
Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SMD, SO-8; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:4.5A; Current Id Max:4.5A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):55mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Rds on Measurement:10V
This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Product Comparison

The three parts on the right have similar specifications to FDS4559.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Max Power Dissipation

Terminal Form

Current Rating

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

Power - Max

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

FET Technology

Max Junction Temperature (Tj)

FET Feature

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Position

Voltage - Rated DC

Turn On Delay Time

Drain to Source Voltage (Vdss)

Terminal Finish

Additional Feature

View Compare
FDS4559

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2002

e3

yes

Active

1 (Unlimited)

8

SMD/SMT

EAR99

55MOhm

Other Transistors

2W

GULL WING

4.5A

2

2

Dual

ENHANCEMENT MODE

2W

1W

N and P-Channel

SWITCHING

55m Ω @ 4.5A, 10V

3V @ 250μA

650pF @ 25V

4.5A 3.5A

18nC @ 10V

10ns

N-CHANNEL AND P-CHANNEL

12 ns

19 ns

4.5A

2.2V

20V

60V

60V

90 mJ

METAL-OXIDE SEMICONDUCTOR

175°C

Logic Level Gate

2.2 V

1.75mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
FDS4897C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

12 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2005

e3

yes

Active

1 (Unlimited)

8

-

EAR99

29MOhm

Other Transistors

900mW

GULL WING

-

2

-

-

ENHANCEMENT MODE

2W

-

N and P-Channel

SWITCHING

29m Ω @ 6.2A, 10V

3V @ 250μA

760pF @ 20V

6.2A 4.4A

20nC @ 10V

15ns

N-CHANNEL AND P-CHANNEL

18 ns

45 ns

4.4A

1.9V

20V

40V

-

-

METAL-OXIDE SEMICONDUCTOR

-

Logic Level Gate

-

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

DUAL

-

-

-

-

-

FDS4559 vs FDS4897C
FDS4953

Fairchild/ON Semiconductor

-

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2002

-

-

Obsolete

1 (Unlimited)

-

SMD/SMT

-

-

-

900mW

-

-5A

2

-

Dual

-

2W

-

2 P-Channel (Dual)

-

55m Ω @ 5A, 10V

3V @ 250μA

528pF @ 15V

5A

9nC @ 5V

13ns

-

9 ns

14 ns

-5A

-1.7V

20V

-30V

-30V

-

-

-

Logic Level Gate

-1.7 V

1.5mm

5mm

4mm

No SVHC

-

RoHS Compliant

Lead Free

-

-30V

7 ns

30V

-

-

FDS4559 vs FDS4953
FDS4935BZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

10 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

187mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e3

yes

Active

1 (Unlimited)

8

SMD/SMT

EAR99

22MOhm

Other Transistors

1.6W

GULL WING

-6.9A

2

2

Dual

ENHANCEMENT MODE

1.6W

900mW

2 P-Channel (Dual)

SWITCHING

22m Ω @ 6.9A, 10V

3V @ 250μA

1360pF @ 15V

6.9A

40nC @ 10V

13ns

-

13 ns

68 ns

-6.9A

-1.9V

25V

-30V

-30V

-

METAL-OXIDE SEMICONDUCTOR

150°C

Logic Level Gate

1.9 V

1.75mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-30V

12 ns

30V

Tin (Sn)

ESD PROTECTION

FDS4559 vs FDS4935BZ