FDS4953

Fairchild/ON Semiconductor FDS4953

Part Number:
FDS4953
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848485-FDS4953
Description:
MOSFET 2P-CH 30V 5A 8SOIC
ECAD Model:
Datasheet:
FDS4953

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Specifications
Fairchild/ON Semiconductor FDS4953 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS4953.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    187mg
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2002
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    SMD/SMT
  • Voltage - Rated DC
    -30V
  • Max Power Dissipation
    900mW
  • Current Rating
    -5A
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Power Dissipation
    2W
  • Turn On Delay Time
    7 ns
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    55m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    528pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5A
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 5V
  • Rise Time
    13ns
  • Drain to Source Voltage (Vdss)
    30V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    -5A
  • Threshold Voltage
    -1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Dual Supply Voltage
    -30V
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    -1.7 V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
FDS4953   Description
  This P-Channel MOSFET is a rugged gate version of Xiantong Semiconductor's advanced power grooving process. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS4953   Features
·-5A-30V RosoN)=55mΩ@Vas=-10V RosON)=95mΩ@VGs=-4.5V ·Low gate charge(6nC typical) Fast switching speed .High performance trench technology for extremely low Ros(ON) ·High power and current handling capability   FDS4953   Applications
Power management Load switch Battery protection  


FDS4953 More Descriptions
Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:-30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:-5A ;RoHS Compliant: Yes
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
MOSFET, DUAL, P, SMD, 8-SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -5A; Current Id Max: -5A; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.046ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -1.7V; Voltage Vgs Rds on Measurement: -10V
Product Comparison
The three parts on the right have similar specifications to FDS4953.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    FET Feature
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Terminal Position
    Terminal Form
    Operating Mode
    Transistor Application
    Polarity/Channel Type
    FET Technology
    Radiation Hardening
    Number of Channels
    Power - Max
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Terminal Finish
    Additional Feature
    View Compare
  • FDS4953
    FDS4953
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2002
    Obsolete
    1 (Unlimited)
    SMD/SMT
    -30V
    900mW
    -5A
    2
    Dual
    2W
    7 ns
    2 P-Channel (Dual)
    55m Ω @ 5A, 10V
    3V @ 250μA
    528pF @ 15V
    5A
    9nC @ 5V
    13ns
    30V
    9 ns
    14 ns
    -5A
    -1.7V
    20V
    -30V
    -30V
    Logic Level Gate
    -1.7 V
    1.5mm
    5mm
    4mm
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS4897C
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2005
    Active
    1 (Unlimited)
    -
    -
    900mW
    -
    2
    -
    2W
    -
    N and P-Channel
    29m Ω @ 6.2A, 10V
    3V @ 250μA
    760pF @ 20V
    6.2A 4.4A
    20nC @ 10V
    15ns
    -
    18 ns
    45 ns
    4.4A
    1.9V
    20V
    40V
    -
    Logic Level Gate
    -
    1.5mm
    5mm
    4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Tin
    SILICON
    e3
    yes
    8
    EAR99
    29MOhm
    Other Transistors
    DUAL
    GULL WING
    ENHANCEMENT MODE
    SWITCHING
    N-CHANNEL AND P-CHANNEL
    METAL-OXIDE SEMICONDUCTOR
    No
    -
    -
    -
    -
    -
    -
  • FDS4559
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2002
    Active
    1 (Unlimited)
    SMD/SMT
    -
    2W
    4.5A
    2
    Dual
    2W
    -
    N and P-Channel
    55m Ω @ 4.5A, 10V
    3V @ 250μA
    650pF @ 25V
    4.5A 3.5A
    18nC @ 10V
    10ns
    -
    12 ns
    19 ns
    4.5A
    2.2V
    20V
    60V
    60V
    Logic Level Gate
    2.2 V
    1.75mm
    5mm
    4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    SILICON
    e3
    yes
    8
    EAR99
    55MOhm
    Other Transistors
    -
    GULL WING
    ENHANCEMENT MODE
    SWITCHING
    N-CHANNEL AND P-CHANNEL
    METAL-OXIDE SEMICONDUCTOR
    No
    2
    1W
    90 mJ
    175°C
    -
    -
  • FDS4935BZ
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    Active
    1 (Unlimited)
    SMD/SMT
    -30V
    1.6W
    -6.9A
    2
    Dual
    1.6W
    12 ns
    2 P-Channel (Dual)
    22m Ω @ 6.9A, 10V
    3V @ 250μA
    1360pF @ 15V
    6.9A
    40nC @ 10V
    13ns
    30V
    13 ns
    68 ns
    -6.9A
    -1.9V
    25V
    -30V
    -30V
    Logic Level Gate
    1.9 V
    1.75mm
    5mm
    4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 1 day ago)
    10 Weeks
    -
    SILICON
    e3
    yes
    8
    EAR99
    22MOhm
    Other Transistors
    -
    GULL WING
    ENHANCEMENT MODE
    SWITCHING
    -
    METAL-OXIDE SEMICONDUCTOR
    No
    2
    900mW
    -
    150°C
    Tin (Sn)
    ESD PROTECTION
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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