Fairchild/ON Semiconductor FDS4953
- Part Number:
- FDS4953
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848485-FDS4953
- Description:
- MOSFET 2P-CH 30V 5A 8SOIC
- Datasheet:
- FDS4953
Fairchild/ON Semiconductor FDS4953 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS4953.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight187mg
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2002
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- Voltage - Rated DC-30V
- Max Power Dissipation900mW
- Current Rating-5A
- Number of Elements2
- Element ConfigurationDual
- Power Dissipation2W
- Turn On Delay Time7 ns
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs55m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds528pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5A
- Gate Charge (Qg) (Max) @ Vgs9nC @ 5V
- Rise Time13ns
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)-5A
- Threshold Voltage-1.7V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Dual Supply Voltage-30V
- FET FeatureLogic Level Gate
- Nominal Vgs-1.7 V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDS4953 Description
This P-Channel MOSFET is a rugged gate version of Xiantong Semiconductor's advanced power grooving process. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS4953 Features
·-5A-30V RosoN)=55mΩ@Vas=-10V RosON)=95mΩ@VGs=-4.5V ·Low gate charge(6nC typical) Fast switching speed .High performance trench technology for extremely low Ros(ON) ·High power and current handling capability FDS4953 Applications
Power management Load switch Battery protection
This P-Channel MOSFET is a rugged gate version of Xiantong Semiconductor's advanced power grooving process. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS4953 Features
·-5A-30V RosoN)=55mΩ@Vas=-10V RosON)=95mΩ@VGs=-4.5V ·Low gate charge(6nC typical) Fast switching speed .High performance trench technology for extremely low Ros(ON) ·High power and current handling capability FDS4953 Applications
Power management Load switch Battery protection
FDS4953 More Descriptions
Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:-30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:-5A ;RoHS Compliant: Yes
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
MOSFET, DUAL, P, SMD, 8-SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -5A; Current Id Max: -5A; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.046ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -1.7V; Voltage Vgs Rds on Measurement: -10V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:-30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:-5A ;RoHS Compliant: Yes
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
MOSFET, DUAL, P, SMD, 8-SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -5A; Current Id Max: -5A; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.046ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -1.7V; Voltage Vgs Rds on Measurement: -10V
The three parts on the right have similar specifications to FDS4953.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET FeatureNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeLifecycle StatusFactory Lead TimeContact PlatingTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceSubcategoryTerminal PositionTerminal FormOperating ModeTransistor ApplicationPolarity/Channel TypeFET TechnologyRadiation HardeningNumber of ChannelsPower - MaxAvalanche Energy Rating (Eas)Max Junction Temperature (Tj)Terminal FinishAdditional FeatureView Compare
-
FDS4953Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~175°C TJTape & Reel (TR)PowerTrench®2002Obsolete1 (Unlimited)SMD/SMT-30V900mW-5A2Dual2W7 ns2 P-Channel (Dual)55m Ω @ 5A, 10V3V @ 250μA528pF @ 15V5A9nC @ 5V13ns30V9 ns14 ns-5A-1.7V20V-30V-30VLogic Level Gate-1.7 V1.5mm5mm4mmNo SVHCRoHS CompliantLead Free------------------------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2005Active1 (Unlimited)--900mW-2-2W-N and P-Channel29m Ω @ 6.2A, 10V3V @ 250μA760pF @ 20V6.2A 4.4A20nC @ 10V15ns-18 ns45 ns4.4A1.9V20V40V-Logic Level Gate-1.5mm5mm4mmNo SVHCROHS3 CompliantLead FreeACTIVE (Last Updated: 1 day ago)12 WeeksTinSILICONe3yes8EAR9929MOhmOther TransistorsDUALGULL WINGENHANCEMENT MODESWITCHINGN-CHANNEL AND P-CHANNELMETAL-OXIDE SEMICONDUCTORNo------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~175°C TJTape & Reel (TR)PowerTrench®2002Active1 (Unlimited)SMD/SMT-2W4.5A2Dual2W-N and P-Channel55m Ω @ 4.5A, 10V3V @ 250μA650pF @ 25V4.5A 3.5A18nC @ 10V10ns-12 ns19 ns4.5A2.2V20V60V60VLogic Level Gate2.2 V1.75mm5mm4mmNo SVHCROHS3 CompliantLead FreeACTIVE (Last Updated: 1 day ago)8 WeeksTinSILICONe3yes8EAR9955MOhmOther Transistors-GULL WINGENHANCEMENT MODESWITCHINGN-CHANNEL AND P-CHANNELMETAL-OXIDE SEMICONDUCTORNo21W90 mJ175°C--
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2006Active1 (Unlimited)SMD/SMT-30V1.6W-6.9A2Dual1.6W12 ns2 P-Channel (Dual)22m Ω @ 6.9A, 10V3V @ 250μA1360pF @ 15V6.9A40nC @ 10V13ns30V13 ns68 ns-6.9A-1.9V25V-30V-30VLogic Level Gate1.9 V1.75mm5mm4mmNo SVHCROHS3 CompliantLead FreeACTIVE (Last Updated: 1 day ago)10 Weeks-SILICONe3yes8EAR9922MOhmOther Transistors-GULL WINGENHANCEMENT MODESWITCHING-METAL-OXIDE SEMICONDUCTORNo2900mW-150°CTin (Sn)ESD PROTECTION
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 September 2023
Introduction to the BTS7960B Motor Drive Module
Ⅰ. What is BTS7960B?Ⅱ. BTS7960B symbol, footprint and pin configurationⅢ. Technical parametersⅣ. Features of BTS7960BⅤ. What are the advantages and disadvantages of BTS7960B?Ⅵ. How to optimize the BTS7960B... -
28 September 2023
MPSA56 PNP General Purpose Transistor: Features, Working Principle and Application
Ⅰ. Overview of MPSA56Ⅱ. Symbol and footprint of MPSA56Ⅲ. Technical parametersⅣ. Features of MPSA56Ⅴ. Pinout and package of MPSA56Ⅵ. How does MPSA56 work?Ⅶ. How does the MPSA56 transistor... -
28 September 2023
TIP35C Footprint, Package, Application and Other Details
Ⅰ. Overview of TIP35CⅡ. Symbol and footprint of TIP35CⅢ. Technical parametersⅣ. Features of TIP35CⅤ. Pinout and package of TIP35CⅥ. Working principle of TIP35C audio power amplifierⅦ. Application of... -
07 October 2023
An Introduction to TDA7266SA Dual Bridge Amplifier
Ⅰ. What is TDA7266SA?Ⅱ. Symbol, footprint and pin connection of TDA7266SAⅢ. Technical parametersⅣ. Features of TDA7266SAⅤ. How to configure the gain of TDA7266SA?Ⅵ. How is the short circuit...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.