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FDS3672

Fairchild/ON Semiconductor FDS3672

Part Number:
FDS3672
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478161-FDS3672
Description:
MOSFET N-CH 100V 7.5A 8-SOIC
ECAD Model:
Datasheet:
FDS3672

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Part Pictures
  • FDS3672 Detail Images
Specifications
Fairchild/ON Semiconductor FDS3672 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS3672.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    19MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    7.5A
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 7.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2015pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    37nC @ 10V
  • Rise Time
    20ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    27 ns
  • Turn-Off Delay Time
    37 ns
  • Continuous Drain Current (ID)
    7.5A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Dual Supply Voltage
    100V
  • Nominal Vgs
    4 V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS3672 Description
FDS3672 is an N-Channel PowerTrench? MOSFET with a voltage of 100V from the manufacturer of ON Semiconductor. The operating temperature of FDS3672 is -55°C~150°C TJ and its maximum power dissipation are 2.5W Ta. It is available in 8-SOIC (0.154, 3.90mm Width) packaging way and it has 8 pins. 

FDS3672 Features
RDS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A
Qg(TOT) = 28nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)

FDS3672 Applications
This product is general usage and suitable for many different applications.
DC/DC Converters
Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
FDS3672 More Descriptions
MOSFET N-CH 100V 7.5A 8-SOIC / Trans MOSFET N-CH 100V 7.5A 8-Pin SOIC T/R
N-Channel PowerTrench® MOSFET, 100V, 7.5A, 22mΩ
N-Channel 100 V 22 mOhm PowerTrench Mosfet SOIC-8
Power Field-Effect Transistor, 7.5A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 7.5 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 23 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.5
FDS3672 Detail Images
Product Comparison
The three parts on the right have similar specifications to FDS3672.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Drain Current-Max (Abs) (ID)
    Surface Mount
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • FDS3672
    FDS3672
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2003
    e3
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    19MOhm
    Tin (Sn)
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    7.5A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    N-Channel
    SWITCHING
    23m Ω @ 7.5A, 10V
    4V @ 250μA
    2015pF @ 25V
    7.5A Ta
    37nC @ 10V
    20ns
    6V 10V
    ±20V
    27 ns
    37 ns
    7.5A
    4V
    20V
    100V
    100V
    4 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS3590
    FDS3590
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    9 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    8
    -
    EAR99
    39MOhm
    -
    FET General Purpose Power
    80V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    6.5A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    11 ns
    N-Channel
    SWITCHING
    39m Ω @ 6.5A, 10V
    4V @ 250μA
    1180pF @ 40V
    6.5A Ta
    35nC @ 10V
    8ns
    6V 10V
    ±20V
    12 ns
    26 ns
    6.5A
    4V
    20V
    80V
    -
    -
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    6.4A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDS3672 vs FDS3590
  • FDS3170N7
    FDS3170N7
    Fairchild/ON Semiconductor
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    NICKEL PALLADIUM GOLD
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    3W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    26m Ω @ 6.7A, 10V
    4V @ 250μA
    2.714pF @ 50V
    6.7A Ta
    77nC @ 10V
    -
    6V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    6.7A
    YES
    260
    unknown
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    100V
    0.026Ohm
    60A
    100V
    360 mJ
    FDS3672 vs FDS3170N7
  • FDS3512
    FDS3512
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    9 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    8
    -
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    80V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    4A
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    7 ns
    N-Channel
    SWITCHING
    70m Ω @ 4A, 10V
    4V @ 250μA
    634pF @ 40V
    4A Ta
    18nC @ 10V
    3ns
    6V 10V
    ±20V
    4 ns
    24 ns
    4A
    -
    20V
    80V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    4A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    0.07Ohm
    -
    -
    -
    FDS3672 vs FDS3512
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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