Fairchild/ON Semiconductor FDS3572

Name: FDS3572
Brand: Fairchild/ON Semiconductor
SKU: 3070290-FDS3572
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDS3572

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070290-FDS3572

Description:: MOSFET N-CH 80V 8.9A 8SOIC

ECAD Model:

Datasheet:: FDS3572

Specifications

Fairchild/ON Semiconductor FDS3572 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS3572.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
130mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2003
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
16MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
FET General Purpose Power
Voltage - Rated DC
80V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
8.9A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1990pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8.9A Ta
Gate Charge (Qg) (Max) @ Vgs
41nC @ 10V
Rise Time
14ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
31 ns
Continuous Drain Current (ID)
8.9A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
80V
Nominal Vgs
4 V
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDS3572 Description
FDS3572 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 80V. The operating temperature of FDS3572 is -55°C~150°C TJ and its maximum power dissipation is 2.5W. FDS3572 has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of FDS3572 is 13 ns and its Turn-Off Delay Time is 31 ns.

FDS3572 Features
rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 8.9A
Qg(tot) = 31nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)

FDS3572 Applications
Primary switch for Isolated DC/DC converters
Distributed Power and Intermediate Bus Architectures
High Voltage Synchronous Rectifier for DC Bus Converters

FDS3572 More Descriptions

N-Channel 80 V 16 mOhm 2.5 W Surface Mount PowerTrench MosFet - SOIC-8
N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ
Trans MOSFET N-CH 80V 8.9A 8-Pin SOIC N T/R - Tape and Reel
ON SEMICONDUCTOR - FDS3572 - N CHANNEL MOSFET, 80V, 8.9A, SOIC
MOSFET,N CH,80V,8.9A,8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.9A; Drain Source Voltage Vds:80V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.9A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V

Product Comparison

The three parts on the right have similar specifications to FDS3572.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Reach Compliance Code

Pin Count

JESD-30 Code

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Case Connection

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
FDS3572

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

12 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

130mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2003

e4

yes

Active

1 (Unlimited)

8

EAR99

16MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

FET General Purpose Power

80V

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

8.9A

NOT SPECIFIED

Not Qualified

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

13 ns

N-Channel

SWITCHING

16m Ω @ 8.9A, 10V

4V @ 250μA

1990pF @ 25V

8.9A Ta

41nC @ 10V

14ns

6V 10V

±20V

13 ns

31 ns

8.9A

4V

20V

80V

4 V

1.5mm

5mm

4mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDS3680

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2000

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

2.5W Ta

-

-

-

-

N-Channel

-

46mOhm @ 5.2A, 10V

4V @ 250μA

1735pF @ 50V

5.2A Ta

53nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

8-SOIC

100V

-

-

-

-

-

-

-

-

-

-

-

FDS3572 vs FDS3680
FDS3612

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

8

-

-

MATTE TIN

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

NOT SPECIFIED

COMMERCIAL

1

2.5W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

120m Ω @ 3.4A, 10V

4V @ 250μA

632pF @ 50V

3.4A Ta

20nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

100V

YES

unknown

8

R-PDSO-G8

SINGLE WITH BUILT-IN DIODE

3.4A

0.12Ohm

100V

-

-

-

FDS3572 vs FDS3612
FDS3170N7

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Obsolete

1 (Unlimited)

8

-

-

NICKEL PALLADIUM GOLD

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

NOT SPECIFIED

COMMERCIAL

1

3W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

26m Ω @ 6.7A, 10V

4V @ 250μA

2.714pF @ 50V

6.7A Ta

77nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

100V

YES

unknown

8

R-PDSO-G8

SINGLE WITH BUILT-IN DIODE

6.7A

0.026Ohm

100V

DRAIN

60A

360 mJ

FDS3572 vs FDS3170N7