Fairchild/ON Semiconductor FDPF7N50U

Name: FDPF7N50U
Brand: Fairchild/ON Semiconductor
SKU: 2490068-FDPF7N50U
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDPF7N50U

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2490068-FDPF7N50U

Description:: MOSFET N-CH 500V 5A TO-220F

ECAD Model:

Datasheet:: FDPF7N50U

Specifications

Fairchild/ON Semiconductor FDPF7N50U technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF7N50U.

Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
UniFET™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
39W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
940pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5A Tc
Gate Charge (Qg) (Max) @ Vgs
16.6nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
RoHS Status
ROHS3 Compliant

Description

FDPF7N50U Overview
A device's maximal input capacitance is 940pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FDPF7N50U Features
a 500V drain to source voltage (Vdss)

FDPF7N50U Applications
There are a lot of Rochester Electronics, LLC
FDPF7N50U applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

FDPF7N50U More Descriptions

N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5Ω
MOSFET N-CH 500V 5A TO-220F - Bulk
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FDPF7N50U.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Transistor Element Material

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Resistance

Terminal Finish

HTS Code

Subcategory

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

Lead Free

Radiation Hardening

View Compare
FDPF7N50U

Fairchild/ON Semiconductor

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tube

UniFET™

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

39W Tc

N-Channel

1.5Ohm @ 2.5A, 10V

5V @ 250μA

940pF @ 25V

5A Tc

16.6nC @ 10V

500V

10V

±30V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDPF20N50FT

Fairchild/ON Semiconductor

Through Hole

TO-220-3 Full Pack

-

-55°C~150°C TJ

Tube

UniFET™

Active

1 (Unlimited)

MOSFET (Metal Oxide)

38.5W Tc

N-Channel

260m Ω @ 10A, 10V

5V @ 250μA

3390pF @ 25V

20A Tc

65nC @ 10V

-

10V

±30V

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

9 Weeks

Through Hole

3

2.27g

SILICON

2004

e3

yes

3

EAR99

260mOhm

Tin (Sn)

8541.29.00.95

FET General Purpose Power

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

1

Single

ENHANCEMENT MODE

38.5W

ISOLATED

45 ns

SWITCHING

120ns

60 ns

100 ns

20A

TO-220AB

30V

500V

80A

1110 mJ

16.07mm

10.36mm

4.9mm

Lead Free

-

FDPF7N50U vs FDPF20N50FT
FDPF4N60NZ

Fairchild/ON Semiconductor

Through Hole

TO-220-3 Full Pack

-

-55°C~150°C TJ

Tube

UniFET-II™

Active

1 (Unlimited)

MOSFET (Metal Oxide)

28W Tc

N-Channel

2.5 Ω @ 1.9A, 10V

5V @ 250μA

510pF @ 25V

3.8A Tc

10.8nC @ 10V

-

10V

±25V

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

7 Weeks

Through Hole

3

2.27g

SILICON

2013

e3

yes

3

EAR99

-

Tin (Sn)

-

FET General Purpose Power

-

-

-

-

1

Single

ENHANCEMENT MODE

28W

ISOLATED

12.7 ns

SWITCHING

15.1ns

12.8 ns

30.2 ns

3.8A

TO-220AB

25V

600V

-

-

16.07mm

10.36mm

4.9mm

-

No

FDPF7N50U vs FDPF4N60NZ
FDPF18N20FT

Fairchild/ON Semiconductor

Through Hole

TO-220-3 Full Pack

-

-55°C~150°C TJ

Tube

UniFET™

Active

1 (Unlimited)

MOSFET (Metal Oxide)

41W Tc

N-Channel

140m Ω @ 9A, 10V

5V @ 250μA

1180pF @ 25V

18A Tc

26nC @ 10V

-

10V

±30V

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

9 Weeks

Through Hole

3

2.27g

SILICON

2013

e3

yes

3

EAR99

-

Tin (Sn)

-

FET General Purpose Power

-

-

-

-

1

Single

ENHANCEMENT MODE

41W

ISOLATED

16 ns

SWITCHING

50ns

40 ns

50 ns

18A

TO-220AB

30V

200V

72A

-

16.07mm

10.36mm

4.9mm

-

No

FDPF7N50U vs FDPF18N20FT