Fairchild/ON Semiconductor FDPF7N50

Name: FDPF7N50
Brand: Fairchild/ON Semiconductor
SKU: 2490121-FDPF7N50
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDPF7N50

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2490121-FDPF7N50

Description:: MOSFET N-CH 500V 7A TO-220F

ECAD Model:

Datasheet:: FDP7N50, FDPF7N50

Specifications

Fairchild/ON Semiconductor FDPF7N50 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF7N50.

Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
UniFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
39W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
900m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
940pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7A Tc
Gate Charge (Qg) (Max) @ Vgs
16.6nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
7A
Drain-source On Resistance-Max
0.9Ohm
Pulsed Drain Current-Max (IDM)
28A
DS Breakdown Voltage-Min
500V
Avalanche Energy Rating (Eas)
270 mJ
RoHS Status
ROHS3 Compliant

Description

FDPF7N50 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 270 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 940pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 7A.Peak drain current is 28A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FDPF7N50 Features
the avalanche energy rating (Eas) is 270 mJ
based on its rated peak drain current 28A.
a 500V drain to source voltage (Vdss)

FDPF7N50 Applications
There are a lot of Rochester Electronics, LLC
FDPF7N50 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

FDPF7N50 More Descriptions

N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM, 500V, 5A, 1.5Ω, TO-220F
N-Channel UniFETTM MOSFET 500V, 7A, 900mΩ
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:7A; Resistance, Rds On:0.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:28A; No. of Pins:3; Power Dissipation:31.3W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FDPF7N50.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Published

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

Supplier Device Package

View Compare
FDPF7N50

Fairchild/ON Semiconductor

Through Hole

TO-220-3 Full Pack

NO

SILICON

-55°C~150°C TJ

Tube

UniFET™

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

39W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

900m Ω @ 3.5A, 10V

5V @ 250μA

940pF @ 25V

7A Tc

16.6nC @ 10V

500V

10V

±30V

TO-220AB

7A

0.9Ohm

28A

500V

270 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDPF4N60NZ

Fairchild/ON Semiconductor

Through Hole

TO-220-3 Full Pack

-

SILICON

-55°C~150°C TJ

Tube

UniFET-II™

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

28W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

2.5 Ω @ 1.9A, 10V

5V @ 250μA

510pF @ 25V

3.8A Tc

10.8nC @ 10V

-

10V

±25V

TO-220AB

-

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

7 Weeks

Through Hole

3

2.27g

2013

EAR99

FET General Purpose Power

Single

28W

12.7 ns

15.1ns

12.8 ns

30.2 ns

3.8A

25V

600V

16.07mm

10.36mm

4.9mm

No

-

FDPF7N50 vs FDPF4N60NZ
FDPF7N50F

Fairchild/ON Semiconductor

Through Hole

TO-220-3 Full Pack

-

-

-55°C~150°C TJ

Tube

UniFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

38.5W Tc

-

-

N-Channel

-

1.15Ohm @ 3A, 10V

5V @ 250μA

960pF @ 25V

6A Tc

20nC @ 10V

500V

10V

±30V

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-220F

FDPF7N50 vs FDPF7N50F
FDPF18N20FT

Fairchild/ON Semiconductor

Through Hole

TO-220-3 Full Pack

-

SILICON

-55°C~150°C TJ

Tube

UniFET™

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

41W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

140m Ω @ 9A, 10V

5V @ 250μA

1180pF @ 25V

18A Tc

26nC @ 10V

-

10V

±30V

TO-220AB

-

-

72A

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

9 Weeks

Through Hole

3

2.27g

2013

EAR99

FET General Purpose Power

Single

41W

16 ns

50ns

40 ns

50 ns

18A

30V

200V

16.07mm

10.36mm

4.9mm

No

-

FDPF7N50 vs FDPF18N20FT