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FDPF3860T

Fairchild/ON Semiconductor FDPF3860T

Part Number:
FDPF3860T
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2480109-FDPF3860T
Description:
MOSFET N-CH 100V 20A TO-220F
ECAD Model:
Datasheet:
FDPF3860T

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Specifications
Fairchild/ON Semiconductor FDPF3860T technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF3860T.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    2.27g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerTrench®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    3.802GOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    33.8W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    33.8W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    38.2m Ω @ 5.9A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1800pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • Rise Time
    17ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    2.5V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    80A
  • Avalanche Energy Rating (Eas)
    278 mJ
  • Height
    16.07mm
  • Length
    10.36mm
  • Width
    4.9mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDPF3860T Description
The FDPF3860T is a 100V N-channel PowerTrench? MOSFET ha ing been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDPF3860T is an optimized power switch combining small gate charge (QG), small reverse recovery charge (Qrr), and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. 

FDPF3860T Features
RDS(on) = 29.1m? ( Typ.) @ VGS = 10V, ID = 5.9A
Fast switching speed
Low Gate Charge
High-performance trench technology for extremely low RDS(on)
High power and current handling capability
RoHS compliant

FDPF3860T Applications
Consumer Appliances
Synchronous Rectification
LCD / LED / PDP TV
Micro Solar Inverters
Uninterruptible Power Supplies
FDPF3860T More Descriptions
In a Pack of 10, N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F ON Semiconductor FDPF3860T
N-Channel PowerTrench® MOSFET 100V, 20A, 38.2mΩ
Trans MOSFET N-CH 100V 20A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Field-Effect Transistor, 20A I(D), 100V, 0.0382ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 100V, 20A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0291ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:33.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Product Comparison
The three parts on the right have similar specifications to FDPF3860T.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Radiation Hardening
    View Compare
  • FDPF3860T
    FDPF3860T
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    PowerTrench®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    3.802GOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    1
    33.8W Tc
    Single
    ENHANCEMENT MODE
    33.8W
    ISOLATED
    15 ns
    N-Channel
    SWITCHING
    38.2m Ω @ 5.9A, 10V
    4.5V @ 250μA
    1800pF @ 25V
    20A Tc
    35nC @ 10V
    17ns
    10V
    ±20V
    7 ns
    24 ns
    20A
    2.5V
    TO-220AB
    20V
    100V
    80A
    278 mJ
    16.07mm
    10.36mm
    4.9mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • FDPF7N50F
    FDPF7N50F
    Fairchild/ON Semiconductor
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -55°C~150°C TJ
    Tube
    UniFET™
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    38.5W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    1.15Ohm @ 3A, 10V
    5V @ 250μA
    960pF @ 25V
    6A Tc
    20nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    TO-220F
    500V
    -
    FDPF3860T vs FDPF7N50F
  • FDPF14N30T
    FDPF14N30T
    Fairchild/ON Semiconductor
    -
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -55°C~150°C TJ
    Tube
    UniFET™
    2013
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    35W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    290m Ω @ 7A, 10V
    5V @ 250μA
    1060pF @ 25V
    14A Tc
    25nC @ 10V
    -
    10V
    ±30V
    -
    -
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    300V
    -
    FDPF3860T vs FDPF14N30T
  • FDPF18N20FT
    FDPF18N20FT
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET™
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    41W Tc
    Single
    ENHANCEMENT MODE
    41W
    ISOLATED
    16 ns
    N-Channel
    SWITCHING
    140m Ω @ 9A, 10V
    5V @ 250μA
    1180pF @ 25V
    18A Tc
    26nC @ 10V
    50ns
    10V
    ±30V
    40 ns
    50 ns
    18A
    -
    TO-220AB
    30V
    200V
    72A
    -
    16.07mm
    10.36mm
    4.9mm
    -
    ROHS3 Compliant
    -
    -
    -
    No
    FDPF3860T vs FDPF18N20FT
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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