FDPC8013S

Fairchild/ON Semiconductor FDPC8013S

Part Number:
FDPC8013S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2473565-FDPC8013S
Description:
MOSFET 2N-CH 30V 13A/26A 3.3MM
ECAD Model:
Datasheet:
FDPC8013S

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Specifications
Fairchild/ON Semiconductor FDPC8013S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPC8013S.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    192mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Digi-Reel®
  • Series
    PowerTrench®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    2W
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Power Dissipation
    2W
  • Turn On Delay Time
    6 ns
  • Power - Max
    800mW 900mW
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    6.4m Ω @ 13A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    827pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    13A 26A
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • Rise Time
    5ns
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    55A
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.7 V
  • Height
    750μm
  • Length
    3.4mm
  • Width
    3.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDPC8013S       Description
  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.
FDPC8013S      Features   Q1 N-Channel Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A Q2 N-Channel Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant
FDPC8013S             Applications
Distribution Other Wired Communications Computing Communications General Purpose Point of Load      



FDPC8013S More Descriptions
MOSFET, N-CH, DUAL, 30V/12V, 8PQFN; Transistor Polarity:Dual N Channel; Continuo
Transistor MOSFET Array Dual N-CH 30V 20A/55A 8-Pin Power Clip 33 T/R - Tape and Reel
Small Signal Field-Effect Transistor, 55A I(D), N-Channel, Metal-oxide Semiconductor FET
Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 30V
FDPC8013S Series 30 V 13 A 26 A Asymmetric Dual N-Channel Mosfet - Power Clip 33
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal powerefficiency.
MOSFET, N-CH, DUAL, 30V/12V, 8PQFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to FDPC8013S.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    Number of Terminations
    JESD-30 Code
    Operating Mode
    Case Connection
    Transistor Application
    Drain to Source Voltage (Vdss)
    Feedback Cap-Max (Crss)
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Terminal Form
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • FDPC8013S
    FDPC8013S
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    192mg
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    2W
    2
    Dual
    2W
    6 ns
    800mW 900mW
    2 N-Channel (Dual)
    6.4m Ω @ 13A, 10V
    3V @ 250μA
    827pF @ 15V
    13A 26A
    13nC @ 10V
    5ns
    4 ns
    30 ns
    55A
    1.7V
    20V
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.7 V
    750μm
    3.4mm
    3.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDPC4044
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    123.733334mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    2.7W
    2
    Single
    2.7W
    8.5 ns
    1W
    2 N-Channel (Dual) Common Drain
    4.3m Ω @ 27A, 10V
    3V @ 250μA
    3215pF @ 15V
    -
    49nC @ 10V
    10ns
    10 ns
    32 ns
    27A
    -
    20V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    750μm
    3.4mm
    3.4mm
    -
    No
    ROHS3 Compliant
    -
    SILICON
    6
    S-PDSO-N6
    ENHANCEMENT MODE
    SOURCE
    SWITCHING
    30V
    95 pF
    -
    -
    -
    -
    -
    -
    -
    -
  • FDPC5030SG
    ACTIVE (Last Updated: 3 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    207.7333mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    -
    1.1W
    -
    -
    -
    -
    1W 1.1W
    2 N-Channel (Dual) Asymmetrical
    5m Ω @ 17A, 10V
    3V @ 250μA
    1715pF @ 15V
    17A 25A
    24nC @ 10V
    -
    -
    -
    25A
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    30V
    -
    260
    not_compliant
    NOT SPECIFIED
    -
    -
    -
    -
    -
  • FDPC5018SG
    ACTIVE (Last Updated: 3 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    207.7333mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    -
    1.1W
    2
    -
    -
    -
    1W 1.1W
    2 N-Channel (Dual) Asymmetrical
    5m Ω @ 17A, 10V
    3V @ 250μA
    1715pF @ 15V
    17A 32A
    24nC @ 10V
    -
    -
    -
    32A
    -
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    Standard
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SILICON
    8
    -
    ENHANCEMENT MODE
    -
    SWITCHING
    30V
    60 pF
    260
    not_compliant
    NOT SPECIFIED
    NO LEAD
    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
    17A
    0.005Ohm
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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