Fairchild/ON Semiconductor FDPC8013S
- Part Number:
- FDPC8013S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473565-FDPC8013S
- Description:
- MOSFET 2N-CH 30V 13A/26A 3.3MM
- Datasheet:
- FDPC8013S
Fairchild/ON Semiconductor FDPC8013S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPC8013S.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight192mg
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- SeriesPowerTrench®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Max Power Dissipation2W
- Number of Elements2
- Element ConfigurationDual
- Power Dissipation2W
- Turn On Delay Time6 ns
- Power - Max800mW 900mW
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs6.4m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds827pF @ 15V
- Current - Continuous Drain (Id) @ 25°C13A 26A
- Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
- Rise Time5ns
- Fall Time (Typ)4 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)55A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs1.7 V
- Height750μm
- Length3.4mm
- Width3.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDPC8013S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.
FDPC8013S Features Q1 N-Channel Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A Q2 N-Channel Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant
FDPC8013S Applications
Distribution Other Wired Communications Computing Communications General Purpose Point of Load
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.
FDPC8013S Features Q1 N-Channel Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A Q2 N-Channel Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant
FDPC8013S Applications
Distribution Other Wired Communications Computing Communications General Purpose Point of Load
FDPC8013S More Descriptions
MOSFET, N-CH, DUAL, 30V/12V, 8PQFN; Transistor Polarity:Dual N Channel; Continuo
Transistor MOSFET Array Dual N-CH 30V 20A/55A 8-Pin Power Clip 33 T/R - Tape and Reel
Small Signal Field-Effect Transistor, 55A I(D), N-Channel, Metal-oxide Semiconductor FET
Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 30V
FDPC8013S Series 30 V 13 A 26 A Asymmetric Dual N-Channel Mosfet - Power Clip 33
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal powerefficiency.
MOSFET, N-CH, DUAL, 30V/12V, 8PQFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to 150°C
Transistor MOSFET Array Dual N-CH 30V 20A/55A 8-Pin Power Clip 33 T/R - Tape and Reel
Small Signal Field-Effect Transistor, 55A I(D), N-Channel, Metal-oxide Semiconductor FET
Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 30V
FDPC8013S Series 30 V 13 A 26 A Asymmetric Dual N-Channel Mosfet - Power Clip 33
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal powerefficiency.
MOSFET, N-CH, DUAL, 30V/12V, 8PQFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to 150°C
The three parts on the right have similar specifications to FDPC8013S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryMax Power DissipationNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyFET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsJESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationDrain to Source Voltage (Vdss)Feedback Cap-Max (Crss)Peak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Terminal FormConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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FDPC8013SACTIVE (Last Updated: 3 days ago)12 WeeksSurface MountSurface Mount8-PowerWDFN8192mg-55°C~150°C TJDigi-Reel®PowerTrench®2009e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose Power2W2Dual2W6 ns800mW 900mW2 N-Channel (Dual)6.4m Ω @ 13A, 10V3V @ 250μA827pF @ 15V13A 26A13nC @ 10V5ns4 ns30 ns55A1.7V20V30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.7 V750μm3.4mm3.4mmNo SVHCNoROHS3 CompliantLead Free-----------------
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ACTIVE (Last Updated: 3 days ago)10 WeeksSurface MountSurface Mount8-PowerWDFN8123.733334mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose Power2.7W2Single2.7W8.5 ns1W2 N-Channel (Dual) Common Drain4.3m Ω @ 27A, 10V3V @ 250μA3215pF @ 15V-49nC @ 10V10ns10 ns32 ns27A-20V-METAL-OXIDE SEMICONDUCTORLogic Level Gate-750μm3.4mm3.4mm-NoROHS3 Compliant-SILICON6S-PDSO-N6ENHANCEMENT MODESOURCESWITCHING30V95 pF--------
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ACTIVE (Last Updated: 3 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8207.7333mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)EAR99Tin (Sn)-1.1W----1W 1.1W2 N-Channel (Dual) Asymmetrical5m Ω @ 17A, 10V3V @ 250μA1715pF @ 15V17A 25A24nC @ 10V---25A----Standard------ROHS3 Compliant-------30V-260not_compliantNOT SPECIFIED-----
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ACTIVE (Last Updated: 3 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8207.7333mg-55°C~150°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)EAR99Tin (Sn)-1.1W2---1W 1.1W2 N-Channel (Dual) Asymmetrical5m Ω @ 17A, 10V3V @ 250μA1715pF @ 15V17A 32A24nC @ 10V---32A---METAL-OXIDE SEMICONDUCTORStandard------ROHS3 Compliant-SILICON8-ENHANCEMENT MODE-SWITCHING30V60 pF260not_compliantNOT SPECIFIEDNO LEADSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE17A0.005Ohm30V
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