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FDPC5030SG

Fairchild/ON Semiconductor FDPC5030SG

Part Number:
FDPC5030SG
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2847699-FDPC5030SG
Description:
MOSFET 2N-CH 30V PWRCLIP56
ECAD Model:
Datasheet:
FDPC5030SG

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Specifications
Fairchild/ON Semiconductor FDPC5030SG technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPC5030SG.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    207.7333mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation
    1.1W
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power - Max
    1W 1.1W
  • FET Type
    2 N-Channel (Dual) Asymmetrical
  • Rds On (Max) @ Id, Vgs
    5m Ω @ 17A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1715pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    17A 25A
  • Gate Charge (Qg) (Max) @ Vgs
    24nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Continuous Drain Current (ID)
    25A
  • FET Feature
    Standard
  • RoHS Status
    ROHS3 Compliant
Description
FDPC5030SG         Description     The device includes two specialized N-channel MOSFET in the dual package. The switch node is connected internally to facilitate the placement and wiring of the synchronous step-down converter. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.  
FDPC5030SG      Features   Q1 N-Channel Max. RDS(on) = 5.0 m|? at VGS = 10 V, ID = 17 A Max. RDS(on) = 6.5 m|? at VGS = 4.5 V, ID = 14 A Q2 N-Channel Max. RDS(on) = 2.4 m|? at VGS = 10 V, ID = 25 A Max. RDS(on) = 3.0 m|? at VGS = 4.5 V, ID = 22 A Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing RoHS Compliant
FDPC5030SG             Applications
Computing Communications General Purpose Point of Load  



FDPC5030SG More Descriptions
Transistor MOSFET Array Dual N-CH 30V 56A/84A 8-Pin PQFN T/R - Tape and Reel
Pt8 N & Pt8 N Erclip 56/Reel Rohs Compliant: Yes |Onsemi FDPC5030SG
Small Signal Field-Effect Transistor, 17A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH DUAL 30V PWRCLIP56
FDPC5030SG - DUAL N-CHANNEL MOSFET
IC DUAL MONO MULTVIBRATR 16-SOIC
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Product Comparison
The three parts on the right have similar specifications to FDPC5030SG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    FET Feature
    RoHS Status
    Transistor Element Material
    Number of Terminations
    Subcategory
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    FET Technology
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Radiation Hardening
    Terminal Form
    Number of Channels
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    View Compare
  • FDPC5030SG
    FDPC5030SG
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    207.7333mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    1.1W
    260
    not_compliant
    NOT SPECIFIED
    1W 1.1W
    2 N-Channel (Dual) Asymmetrical
    5m Ω @ 17A, 10V
    3V @ 250μA
    1715pF @ 15V
    17A 25A
    24nC @ 10V
    30V
    25A
    Standard
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDPC4044
    FDPC4044
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    123.733334mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    2.7W
    -
    -
    -
    1W
    2 N-Channel (Dual) Common Drain
    4.3m Ω @ 27A, 10V
    3V @ 250μA
    3215pF @ 15V
    -
    49nC @ 10V
    30V
    27A
    Logic Level Gate
    ROHS3 Compliant
    SILICON
    6
    FET General Purpose Power
    S-PDSO-N6
    2
    Single
    ENHANCEMENT MODE
    2.7W
    SOURCE
    8.5 ns
    SWITCHING
    10ns
    10 ns
    32 ns
    20V
    METAL-OXIDE SEMICONDUCTOR
    95 pF
    750μm
    3.4mm
    3.4mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDPC5030SG vs FDPC4044
  • FDPC8016S
    FDPC8016S
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    207.7333mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    42W
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    2.1W 2.3W
    2 N-Channel (Dual) Asymmetrical
    3.8m Ω @ 20A, 10V
    2.5V @ 250μA
    2375pF @ 13V
    20A 35A
    35nC @ 10V
    -
    100A
    Logic Level Gate
    ROHS3 Compliant
    SILICON
    8
    FET General Purpose Power
    -
    2
    Dual
    ENHANCEMENT MODE
    -
    DRAIN
    13 ns
    SWITCHING
    4ns
    3 ns
    38 ns
    12V
    METAL-OXIDE SEMICONDUCTOR
    -
    750μm
    5.1mm
    6.1mm
    -
    NO LEAD
    2
    25V
    75A
    73 mJ
    -
    -
    -
    -
    FDPC5030SG vs FDPC8016S
  • FDPC8013S
    FDPC8013S
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    192mg
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    2W
    -
    -
    -
    800mW 900mW
    2 N-Channel (Dual)
    6.4m Ω @ 13A, 10V
    3V @ 250μA
    827pF @ 15V
    13A 26A
    13nC @ 10V
    -
    55A
    Logic Level Gate
    ROHS3 Compliant
    -
    -
    FET General Purpose Power
    -
    2
    Dual
    -
    2W
    -
    6 ns
    -
    5ns
    4 ns
    30 ns
    20V
    METAL-OXIDE SEMICONDUCTOR
    -
    750μm
    3.4mm
    3.4mm
    No
    -
    -
    30V
    -
    -
    1.7V
    1.7 V
    No SVHC
    Lead Free
    FDPC5030SG vs FDPC8013S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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