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FDPC8012S

Fairchild/ON Semiconductor FDPC8012S

Part Number:
FDPC8012S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3813502-FDPC8012S
Description:
MOSFET 2N-CH 25V 13A/26A PWR CLP
ECAD Model:
Datasheet:
FDPC8012S

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Specifications
Fairchild/ON Semiconductor FDPC8012S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPC8012S.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    192mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    2W
  • Number of Elements
    2
  • Configuration
    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power - Max
    800mW 900mW
  • FET Type
    2 N-Channel (Dual) Asymmetrical
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 12A, 4.5V
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1075pF @ 13V
  • Current - Continuous Drain (Id) @ 25°C
    13A 26A
  • Gate Charge (Qg) (Max) @ Vgs
    8nC @ 4.5V
  • Rise Time
    3ns
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    34 ns
  • Continuous Drain Current (ID)
    88A
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    13A
  • Drain-source On Resistance-Max
    0.007Ohm
  • Drain to Source Breakdown Voltage
    25V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    725μm
  • Length
    3.3mm
  • Width
    3.3mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDPC8012S         Description
 The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.   FDPC8012S       Features   Q1 N-Channel Max. RDS(on) = 7.0 m|? at VGS = 4.5 V, ID = 12 A Q2 N-Channel Max. RDS(on) = 2.2 m|? at VGS = 4.5 V, ID = 23 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant
FDPC8012S        Applications
Server Computing Communications General Purpose Point of Load

FDPC8012S More Descriptions
Transistor MOSFET Array Dual N-CH 25V 35A/88A 10-Pin Power Clip 33 T/R - Tape and Reel
Dual N-Channel 25 V 10.5/3.2 mOhm 8/25 nC 1.6/2 W PowerTrench SMT Mosfet PQFN-8
Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 25V
Small Signal Field-Effect Transistor, 13A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Product Comparison
The three parts on the right have similar specifications to FDPC8012S.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Terminal Form
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    View Compare
  • FDPC8012S
    FDPC8012S
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    192mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Tin (Sn)
    FET General Purpose Power
    2W
    2
    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    800mW 900mW
    2 N-Channel (Dual) Asymmetrical
    SWITCHING
    7m Ω @ 12A, 4.5V
    2.2V @ 250μA
    1075pF @ 13V
    13A 26A
    8nC @ 4.5V
    3ns
    3 ns
    34 ns
    88A
    MO-240BA
    12V
    13A
    0.007Ohm
    25V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    725μm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDPC5030SG
    FDPC5030SG
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    207.7333mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    1.1W
    -
    -
    -
    1W 1.1W
    2 N-Channel (Dual) Asymmetrical
    -
    5m Ω @ 17A, 10V
    3V @ 250μA
    1715pF @ 15V
    17A 25A
    24nC @ 10V
    -
    -
    -
    25A
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    -
    ROHS3 Compliant
    260
    not_compliant
    NOT SPECIFIED
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDPC8012S vs FDPC5030SG
  • FDPC5018SG
    FDPC5018SG
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    207.7333mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Tin (Sn)
    -
    1.1W
    2
    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    1W 1.1W
    2 N-Channel (Dual) Asymmetrical
    SWITCHING
    5m Ω @ 17A, 10V
    3V @ 250μA
    1715pF @ 15V
    17A 32A
    24nC @ 10V
    -
    -
    -
    32A
    -
    -
    17A
    0.005Ohm
    -
    METAL-OXIDE SEMICONDUCTOR
    Standard
    -
    -
    -
    -
    ROHS3 Compliant
    260
    not_compliant
    NOT SPECIFIED
    30V
    NO LEAD
    30V
    60 pF
    -
    -
    -
    -
    -
    -
    -
    FDPC8012S vs FDPC5018SG
  • FDPC8013S
    FDPC8013S
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    192mg
    -
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    FET General Purpose Power
    2W
    2
    -
    -
    800mW 900mW
    2 N-Channel (Dual)
    -
    6.4m Ω @ 13A, 10V
    3V @ 250μA
    827pF @ 15V
    13A 26A
    13nC @ 10V
    5ns
    4 ns
    30 ns
    55A
    -
    20V
    -
    -
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    750μm
    3.4mm
    3.4mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    Dual
    2W
    6 ns
    1.7V
    1.7 V
    No SVHC
    Lead Free
    FDPC8012S vs FDPC8013S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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