Fairchild/ON Semiconductor FDPC5018SG
- Part Number:
- FDPC5018SG
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2474501-FDPC5018SG
- Description:
- MOSFET 2N-CH 30V PWRCLIP56
- Datasheet:
- FDPC5018SG
Fairchild/ON Semiconductor FDPC5018SG technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPC5018SG.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight207.7333mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation1.1W
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements2
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max1W 1.1W
- FET Type2 N-Channel (Dual) Asymmetrical
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5m Ω @ 17A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1715pF @ 15V
- Current - Continuous Drain (Id) @ 25°C17A 32A
- Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Continuous Drain Current (ID)32A
- Drain Current-Max (Abs) (ID)17A
- Drain-source On Resistance-Max0.005Ohm
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Feedback Cap-Max (Crss)60 pF
- RoHS StatusROHS3 Compliant
FDPC5018SG Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC5018SG Features Q1 N-Channel Max. RDS(on) = 5.0 m|? at VGS = 10 V, ID = 17 A Max. RDS(on) = 6.5 m|? at VGS = 10 V, ID = 17 A Q2 N-Channel Max. RDS(on) = 1.6 m|? at VGS = 10 V, ID = 32 A Max. RDS(on) = 2.0 m|? at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing RoHS Compliant
FDPC5018SG Applications Computing Communications General Purpose Point of Load
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC5018SG Features Q1 N-Channel Max. RDS(on) = 5.0 m|? at VGS = 10 V, ID = 17 A Max. RDS(on) = 6.5 m|? at VGS = 10 V, ID = 17 A Q2 N-Channel Max. RDS(on) = 1.6 m|? at VGS = 10 V, ID = 32 A Max. RDS(on) = 2.0 m|? at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing RoHS Compliant
FDPC5018SG Applications Computing Communications General Purpose Point of Load
FDPC5018SG More Descriptions
Transistor MOSFET Array Dual N-CH 30V 56A/109A 8-Pin PQFN T/R - Tape and Reel
Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 30V
Trans MOSFET N-CH 30V 17A/32A 8-Pin PQFN EP T/R
MOSFET, DUAL N-CH, 30V, 109A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 109A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET, 30V
Trans MOSFET N-CH 30V 17A/32A 8-Pin PQFN EP T/R
MOSFET, DUAL N-CH, 30V, 109A, 150DEG C; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 109A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
The three parts on the right have similar specifications to FDPC5018SG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationOperating ModePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyFET FeatureFeedback Cap-Max (Crss)RoHS StatusPublishedSubcategoryJESD-30 CodeElement ConfigurationPower DissipationCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningNumber of ChannelsDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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FDPC5018SGACTIVE (Last Updated: 3 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8207.7333mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)8EAR99Tin (Sn)1.1WNO LEAD260not_compliantNOT SPECIFIED2SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE1W 1.1W2 N-Channel (Dual) AsymmetricalSWITCHING5m Ω @ 17A, 10V3V @ 250μA1715pF @ 15V17A 32A24nC @ 10V30V32A17A0.005Ohm30VMETAL-OXIDE SEMICONDUCTORStandard60 pFROHS3 Compliant--------------------
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ACTIVE (Last Updated: 3 days ago)10 WeeksSurface MountSurface Mount8-PowerWDFN8123.733334mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)6EAR99Tin (Sn)2.7W----2-ENHANCEMENT MODE1W2 N-Channel (Dual) Common DrainSWITCHING4.3m Ω @ 27A, 10V3V @ 250μA3215pF @ 15V-49nC @ 10V30V27A---METAL-OXIDE SEMICONDUCTORLogic Level Gate95 pFROHS3 Compliant2010FET General Purpose PowerS-PDSO-N6Single2.7WSOURCE8.5 ns10ns10 ns32 ns20V750μm3.4mm3.4mmNo----
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ACTIVE (Last Updated: 3 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8207.7333mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)8EAR99Tin (Sn)42WNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIED2-ENHANCEMENT MODE2.1W 2.3W2 N-Channel (Dual) AsymmetricalSWITCHING3.8m Ω @ 20A, 10V2.5V @ 250μA2375pF @ 13V20A 35A35nC @ 10V-100A---METAL-OXIDE SEMICONDUCTORLogic Level Gate-ROHS3 Compliant-FET General Purpose Power-Dual-DRAIN13 ns4ns3 ns38 ns12V750μm5.1mm6.1mm-225V75A73 mJ
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ACTIVE (Last Updated: 3 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8207.7333mg--55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)-EAR99Tin (Sn)1.1W-260not_compliantNOT SPECIFIED---1W 1.1W2 N-Channel (Dual) Asymmetrical-5m Ω @ 17A, 10V3V @ 250μA1715pF @ 15V17A 25A24nC @ 10V30V25A----Standard-ROHS3 Compliant2017------------------
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