Fairchild/ON Semiconductor FDP7030L
- Part Number:
- FDP7030L
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586658-FDP7030L
- Description:
- MOSFET N-CH 30V 80A TO-220
- ECAD Model:
-
- Datasheet:
- FDB7030L, FDP7030L TO220B03 Pkg Drawing
Fairchild/ON Semiconductor FDP7030L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP7030L.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~175°C TJ
- PackagingTube
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max68W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.44pF @ 15V
- Current - Continuous Drain (Id) @ 25°C80A Ta
- Gate Charge (Qg) (Max) @ Vgs33nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)80A
- Drain-source On Resistance-Max0.007Ohm
- Pulsed Drain Current-Max (IDM)240A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)114 mJ
- RoHS StatusROHS3 Compliant
FDP7030L Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 114 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.44pF @ 15V.80A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 240A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDP7030L Features
the avalanche energy rating (Eas) is 114 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
FDP7030L Applications
There are a lot of Rochester Electronics, LLC
FDP7030L applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 114 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.44pF @ 15V.80A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 240A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDP7030L Features
the avalanche energy rating (Eas) is 114 mJ
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
FDP7030L Applications
There are a lot of Rochester Electronics, LLC
FDP7030L applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
FDP7030L More Descriptions
MOSFET N-CH 30V 80A TO-220
MOSFET; Continuous Drain Current, Id:100A; On-Resistance, Rds(on):0.007ohm; Package/Case:3-TO-220; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:3V; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Power Dissipation Pd:125W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:TO-220 (SOT-78B); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:300A; Voltage Vds:30V; Voltage Vgs th Max:2V
MOSFET; Continuous Drain Current, Id:100A; On-Resistance, Rds(on):0.007ohm; Package/Case:3-TO-220; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:3V; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Power Dissipation Pd:125W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:TO-220 (SOT-78B); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:300A; Voltage Vds:30V; Voltage Vgs th Max:2V
The three parts on the right have similar specifications to FDP7030L.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedECCN CodeResistanceSubcategoryNumber of ChannelsElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningLead FreeVoltage - Rated DCCurrent RatingVoltageCurrentView Compare
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FDP7030LThrough HoleTO-220-3NOSILICON-65°C~175°C TJTubePowerTrench®e3yesObsolete1 (Unlimited)3TINLOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE68W TcENHANCEMENT MODEN-ChannelSWITCHING7m Ω @ 40A, 10V3V @ 250μA2.44pF @ 15V80A Ta33nC @ 5V30V4.5V 10V±20VTO-220AB80A0.007Ohm240A30V114 mJROHS3 Compliant-------------------------------- -
Through HoleTO-220-3NOSILICON-55°C~150°C TJTubeUniFET™e3yesObsolete1 (Unlimited)3MATTE TINAVALANCHE ENERGY RATEDMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE131W TcENHANCEMENT MODEN-ChannelSWITCHING11m Ω @ 37.5A, 10V4V @ 250μA4.468pF @ 25V75A Tc104nC @ 10V75V10V±20VTO-220AB75A0.011Ohm300A75V1164 mJROHS3 Compliant-------------------------------
-
Through HoleTO-220-3-SILICON-55°C~150°C TJTubeUniFET-II™e3yesActive1 (Unlimited)3Tin (Sn)-MOSFET (Metal Oxide)-------1-147W TcENHANCEMENT MODEN-ChannelSWITCHING1.25 Ω @ 3.25A, 10V5V @ 250μA730pF @ 25V6.5A Tc17nC @ 10V-10V±30VTO-220AB--26A-275 mJROHS3 CompliantACTIVE (Last Updated: 3 days ago)5 WeeksThrough Hole31.8g2010EAR991.25MOhmFET General Purpose Power1Single147W17.5 ns30ns25 ns40 ns6.5A3V30V600V150°C20.4mm10.67mm4.83mmNo SVHCNoLead Free----
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Through HoleTO-220-3-SILICON-55°C~150°C TJTubeUniFET™e3yesActive1 (Unlimited)3Tin (Sn)FAST SWITCHINGMOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIED--Not Qualified1-137W TcENHANCEMENT MODEN-ChannelSWITCHING11m Ω @ 37.5A, 10V4V @ 250μA4468pF @ 25V75A Tc104nC @ 10V-10V±20VTO-220AB-----ROHS3 CompliantACTIVE (Last Updated: 3 days ago)5 WeeksThrough Hole3-2006EAR9911MOhmFET General Purpose Power-Single137W43 ns212ns147 ns273 ns75A4V20V75V-9.4mm10.67mm4.83mmNo SVHC-Lead Free75V75A75V75A
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