Fairchild/ON Semiconductor FDP52N20

Name: FDP52N20
Brand: Fairchild/ON Semiconductor
SKU: 2482976-FDP52N20
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDP52N20

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2482976-FDP52N20

Description:: MOSFET N-CH 200V 52A TO-220

ECAD Model:

Datasheet:: FDP52N20, FDPF52N20T TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor FDP52N20 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDP52N20.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
UniFET™
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
49MOhm
Additional Feature
AVALANCHE ENERGY RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Current Rating
52A
Number of Elements
1
Power Dissipation-Max
357W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
357W
Turn On Delay Time
53 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
49m Ω @ 26A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
52A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
175ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
29 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
52A
Threshold Voltage
5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
208A
Avalanche Energy Rating (Eas)
2520 mJ
Height
9.4mm
Length
10.1mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDP52N20 Description
FDP52N20 is a type of N-channel enhancement-mode power field-effect transistor that is manufactured by ON Semiconductor based on proprietary, planar stripe, DMOS technology. On the basis of this technology, it is capable of minimizing on-state resistance, providing superior switching performance, and withstanding high energy pulse in the avalanche and commutation mode. As a result, FDP52N20 is ideally suitable for power supplies in the high efficient switching mode power supplies and active power factor correction (PFC). More information can be found in the FDP52N20 datasheet.

FDP52N20 Features
Low gate charge
Better dv/dt capability
Advanced switching performance
Planar stripe, DMOS technology
Available in the TO-220 package

FDP52N20 Applications
High efficient switching mode power supplies
Active power factor correction (PFC)

FDP52N20 More Descriptions

N-Channel Power MOSFET, UniFETTM, 200V, 52A, 49mΩ, TO-220
FDP52N20 Series 200 V 52 A 0.049 Ohm Through Hole N-Channel MOSFET - TO-220-3
Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FDP52N20.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDP52N20

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

4 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

UniFET™

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

49MOhm

AVALANCHE ENERGY RATED

FET General Purpose Power

200V

MOSFET (Metal Oxide)

52A

1

357W Tc

Single

ENHANCEMENT MODE

357W

53 ns

N-Channel

SWITCHING

49m Ω @ 26A, 10V

5V @ 250μA

2900pF @ 25V

52A Tc

63nC @ 10V

175ns

10V

±30V

29 ns

48 ns

52A

5V

TO-220AB

30V

200V

208A

2520 mJ

9.4mm

10.1mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDP5N60NZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

5 Weeks

-

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

UniFET-II™

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

1

100W Tc

Single

ENHANCEMENT MODE

100W

15 ns

N-Channel

SWITCHING

2 Ω @ 2.25A, 10V

5V @ 250μA

600pF @ 25V

4.5A Tc

13nC @ 10V

20ns

10V

±25V

20 ns

35 ns

4.5A

-

TO-220AB

25V

600V

-

-

16.3mm

10.67mm

4.7mm

-

-

ROHS3 Compliant

-

Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

2Ohm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP52N20 vs FDP5N60NZ
FDP5500_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220-3

Automotive, AEC-Q101, UltraFET™

7 mOhm @ 80A, 10V

375W (Tc)

Tube

TO-220-3

-55°C ~ 175°C (TJ)

Through Hole

3565pF @ 25V

269nC @ 20V

N-Channel

-

10V

55V

80A (Tc)

FDP52N20 vs FDP5500_F085
FDP55N06

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

5 Weeks

-

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

-55°C~150°C TJ

Tube

UniFET™

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

22mOhm

AVALANCHE RATED

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

1

114W Tc

Single

ENHANCEMENT MODE

114W

30 ns

N-Channel

SWITCHING

22m Ω @ 27.5A, 10V

4V @ 250μA

1510pF @ 25V

55A Tc

37nC @ 10V

130ns

10V

±25V

95 ns

70 ns

55A

2V

TO-220AB

25V

60V

220A

480 mJ

-

-

-

No SVHC

-

ROHS3 Compliant

Lead Free

Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDP52N20 vs FDP55N06