Fairchild/ON Semiconductor FDN5618P

Name: FDN5618P
Brand: Fairchild/ON Semiconductor
SKU: 2484600-FDN5618P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDN5618P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484600-FDN5618P

Description:: MOSFET P-CH 60V 1.25A SSOT3

ECAD Model:

Datasheet:: FDN5618P

Specifications

Fairchild/ON Semiconductor FDN5618P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDN5618P.

Lifecycle Status
ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
170mOhm
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-1.25A
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
6.5 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
170m Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
430pF @ 30V
Current - Continuous Drain (Id) @ 25°C
1.25A Ta
Gate Charge (Qg) (Max) @ Vgs
13.8nC @ 10V
Rise Time
8ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
16.5 ns
Continuous Drain Current (ID)
1.2A
Threshold Voltage
-1.6V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Dual Supply Voltage
-60V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
20 V
Height
1.22mm
Length
2.92mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDN5618P Description
The FDN5618P 60V P-Channel MOSFET uses ON Semiconductor's high voltage PowerTrench process. It has been optimized for power management applications.

FDN5618P Features
Fast switching speed
High performance trench technology for extremely low RDS(ON)
Power Dissipation: 500 mW
Turn-Off Delay Time: 16.5 ns
Nominal Vgs: 20 V
ROHS3 Compliant
No SVHC
Lead Free

FDN5618P Applications
DC-DC converters
Load switch
Power management
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid

FDN5618P More Descriptions

P-Channel PowerTrench® MOSFET, 60V, -1.25A, 170mΩ
P-Channel 60 V 0.170 Ohm Logic Level PowerTrench Mosfet SSOT-3
This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:1.2A; On Resistance, Rds(on):0.17ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1.25 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 16 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.25A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:20V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Current Temperature:25°C; Device Marking:618; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:618; Tape Width:8mm; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-3V

Certification