Fairchild/ON Semiconductor FDH44N50

Name: FDH44N50
Brand: Fairchild/ON Semiconductor
SKU: 3070539-FDH44N50
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDH44N50

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3070539-FDH44N50

Description:: MOSFET N-CH 500V 44A TO-247

ECAD Model:

Datasheet:: FDH44N50

Specifications

Fairchild/ON Semiconductor FDH44N50 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDH44N50.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
120mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
44A
Number of Elements
1
Power Dissipation-Max
750W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
750W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
120m Ω @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5335pF @ 25V
Current - Continuous Drain (Id) @ 25°C
44A Tc
Gate Charge (Qg) (Max) @ Vgs
108nC @ 10V
Rise Time
84ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
79 ns
Turn-Off Delay Time
45 ns
Continuous Drain Current (ID)
44A
Threshold Voltage
3.15V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Dual Supply Voltage
500V
Nominal Vgs
3.15 V
Height
20.82mm
Length
15.87mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDH44N50 Description FDH44N50 MOSFET is based on established silicon processes that provide designers with an extensive range of devices. FDH44N50 datasheet available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing. ON Semiconductor FDH44N50 is used in power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. FDH44N50 Features Improved Gate, avalanche and high reapplied dv/dt ruggedness Low gate charge Qg results in simple drive requirement Reduced RDS(on) Improved switching speed with low EMI Reduced Miller capacitance and low Input capacitance FDH44N50 Applications Power factor correction Electronic lamp ballasts Flat panel display TV power ATX

FDH44N50 More Descriptions

N-Channel Power MOSFET, UniFETTM, 500 V, 44 A, 120 mΩ, TO-247
Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Coaxial Connectors (RF) Jack, Male Pin Snap-On 1 (Unlimited) 50 Ω 10 Weeks Bulk SSMB Through Hole, Right Angle Brass RF Connectors / Coaxial Connectors SSMB M RA NA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):0.12ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247 ;RoHS Compliant: Yes
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:500V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.15V; Power Dissipation Pd:750W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Id Max:44A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:750W; Power Dissipation Pd:750W; Power Dissipation Ptot Max:750W; Pulse Current Idm:176A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3.15V; Voltage Vgs Rds on Measurement:10V

Certification