Fairchild/ON Semiconductor FDFS6N754
- Part Number:
- FDFS6N754
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481626-FDFS6N754
- Description:
- MOSFET N-CH 30V 4A 8-SOIC
- Datasheet:
- FDFS6N754
Fairchild/ON Semiconductor FDFS6N754 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDFS6N754.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight230.4mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance56mOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating4A
- Number of Elements1
- Power Dissipation-Max1.6W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs56m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds299pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4A Ta
- Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)2 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)4A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)4A
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)20A
- Dual Supply Voltage30V
- FET FeatureSchottky Diode (Isolated)
- Nominal Vgs1.7 V
- Height1.5mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDFS6N754 Description
The FDFS6N754 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
FDFS6N754 Features Max rDS(on) = 56m|? at VGS = 0V, ID= 4A Max rDS(on) = 75m|? at VGS= 4.5V, ID = 3.5A VF 0.45V @ 2A VF 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Low Gate Charge (Qg = 4nC) Low Miller Charge
FDFS6N754 Applications Inverter Synchronous Rectifier
FDFS6N754 Features Max rDS(on) = 56m|? at VGS = 0V, ID= 4A Max rDS(on) = 75m|? at VGS= 4.5V, ID = 3.5A VF 0.45V @ 2A VF 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Low Gate Charge (Qg = 4nC) Low Miller Charge
FDFS6N754 Applications Inverter Synchronous Rectifier
FDFS6N754 More Descriptions
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ
N-Channel 30 V 56 mOhm Integrated PowerTrench® Mosfet SOIC-8
Trans MOSFET N-CH 30V 4A 8-Pin SOIC N T/R
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:225pF; Current Id Max:4A; On State Resistance Max:56mohm; Package / Case:SOIC; Pin Configuration:A(1&2), S(3), G(4), C(7&8), D(6&5); Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
N-Channel 30 V 56 mOhm Integrated PowerTrench® Mosfet SOIC-8
Trans MOSFET N-CH 30V 4A 8-Pin SOIC N T/R
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:225pF; Current Id Max:4A; On State Resistance Max:56mohm; Package / Case:SOIC; Pin Configuration:A(1&2), S(3), G(4), C(7&8), D(6&5); Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
The three parts on the right have similar specifications to FDFS6N754.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageFET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFactory Lead TimePublishedForward CurrentForward VoltageView Compare
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FDFS6N754LAST SHIPMENTS (Last Updated: 1 week ago)Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8230.4mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)8SMD/SMTEAR9956mOhmTin (Sn)FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING4A11.6W TaSingleENHANCEMENT MODE2W6 nsN-ChannelSWITCHING56m Ω @ 4A, 10V2.5V @ 250μA299pF @ 15V4A Ta6nC @ 10V8ns4.5V 10V±20V2 ns20 ns4A1.7V20V4A30V20A30VSchottky Diode (Isolated)1.7 V1.5mm5mm4mmNo SVHCNoRoHS CompliantLead Free----------------
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--Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)8-EAR99-MATTE TIN--MOSFET (Metal Oxide)DUALGULL WING-1900mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING125m Ω @ 3.3A, 10V3V @ 250μA182pF @ 10V3.3A Ta3nC @ 5V-4.5V 10V±20V-----3.3A-10A-Schottky Diode (Isolated)------ROHS3 Compliant-YES8541.29.00.95260NOT SPECIFIED8R-PDSO-G8Not QualifiedSINGLE WITH BUILT-IN DIODE20V0.125Ohm20V----
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ACTIVE (Last Updated: 2 days ago)Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8230.4mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)8-EAR99-Tin (Sn)Other Transistors-60VMOSFET (Metal Oxide)DUALGULL WING-3A1900mW TaSingleENHANCEMENT MODE2W8 nsP-ChannelSWITCHING110m Ω @ 3A, 10V3V @ 250μA714pF @ 30V3A Ta21nC @ 10V11ns4.5V 10V±20V8.5 ns28 ns-3A-20V3A-60V--Schottky Diode (Isolated)-----NoROHS3 CompliantLead Free--------60V--7 Weeks---
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ACTIVE (Last Updated: 2 days ago)Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8187mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)8SMD/SMTEAR9923MOhmTin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)DUALGULL WING-11.6W TaSingleENHANCEMENT MODE2W6 nsN-ChannelSWITCHING23m Ω @ 7A, 10V2.5V @ 250μA700pF @ 15V7A Ta13nC @ 10V2ns4.5V 10V±20V2 ns14 ns7A-20V7A30V30A30VSchottky Diode (Isolated)1.8 V1.5mm5mm4mmNo SVHCNoROHS3 CompliantLead Free-----------18 Weeks20172mA450mV
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