FDFS6N754

Fairchild/ON Semiconductor FDFS6N754

Part Number:
FDFS6N754
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481626-FDFS6N754
Description:
MOSFET N-CH 30V 4A 8-SOIC
ECAD Model:
Datasheet:
FDFS6N754

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Specifications
Fairchild/ON Semiconductor FDFS6N754 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDFS6N754.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    230.4mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    56mOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    4A
  • Number of Elements
    1
  • Power Dissipation-Max
    1.6W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    56m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    299pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    6nC @ 10V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    4A
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    20A
  • Dual Supply Voltage
    30V
  • FET Feature
    Schottky Diode (Isolated)
  • Nominal Vgs
    1.7 V
  • Height
    1.5mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
FDFS6N754 Description The FDFS6N754 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

FDFS6N754 Features Max rDS(on) = 56m|? at VGS = 0V, ID= 4A Max rDS(on) = 75m|? at VGS= 4.5V, ID = 3.5A VF 0.45V @ 2A VF 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Low Gate Charge (Qg = 4nC) Low Miller Charge

FDFS6N754 Applications Inverter Synchronous Rectifier


FDFS6N754 More Descriptions
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ
N-Channel 30 V 56 mOhm Integrated PowerTrench® Mosfet SOIC-8
Trans MOSFET N-CH 30V 4A 8-Pin SOIC N T/R
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:225pF; Current Id Max:4A; On State Resistance Max:56mohm; Package / Case:SOIC; Pin Configuration:A(1&2), S(3), G(4), C(7&8), D(6&5); Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Product Comparison
The three parts on the right have similar specifications to FDFS6N754.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    FET Feature
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    HTS Code
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Factory Lead Time
    Published
    Forward Current
    Forward Voltage
    View Compare
  • FDFS6N754
    FDFS6N754
    LAST SHIPMENTS (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    230.4mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    56mOhm
    Tin (Sn)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    4A
    1
    1.6W Ta
    Single
    ENHANCEMENT MODE
    2W
    6 ns
    N-Channel
    SWITCHING
    56m Ω @ 4A, 10V
    2.5V @ 250μA
    299pF @ 15V
    4A Ta
    6nC @ 10V
    8ns
    4.5V 10V
    ±20V
    2 ns
    20 ns
    4A
    1.7V
    20V
    4A
    30V
    20A
    30V
    Schottky Diode (Isolated)
    1.7 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDFS2P102A
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    EAR99
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    900mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    125m Ω @ 3.3A, 10V
    3V @ 250μA
    182pF @ 10V
    3.3A Ta
    3nC @ 5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    3.3A
    -
    10A
    -
    Schottky Diode (Isolated)
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    8541.29.00.95
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    20V
    0.125Ohm
    20V
    -
    -
    -
    -
  • FDFS2P106A
    ACTIVE (Last Updated: 2 days ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    230.4mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    8
    -
    EAR99
    -
    Tin (Sn)
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -3A
    1
    900mW Ta
    Single
    ENHANCEMENT MODE
    2W
    8 ns
    P-Channel
    SWITCHING
    110m Ω @ 3A, 10V
    3V @ 250μA
    714pF @ 30V
    3A Ta
    21nC @ 10V
    11ns
    4.5V 10V
    ±20V
    8.5 ns
    28 ns
    -3A
    -
    20V
    3A
    -60V
    -
    -
    Schottky Diode (Isolated)
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    -
    -
    7 Weeks
    -
    -
    -
  • FDFS6N548
    ACTIVE (Last Updated: 2 days ago)
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    187mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    23MOhm
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    1.6W Ta
    Single
    ENHANCEMENT MODE
    2W
    6 ns
    N-Channel
    SWITCHING
    23m Ω @ 7A, 10V
    2.5V @ 250μA
    700pF @ 15V
    7A Ta
    13nC @ 10V
    2ns
    4.5V 10V
    ±20V
    2 ns
    14 ns
    7A
    -
    20V
    7A
    30V
    30A
    30V
    Schottky Diode (Isolated)
    1.8 V
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    18 Weeks
    2017
    2mA
    450mV
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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