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FDFMA3N109

Fairchild/ON Semiconductor FDFMA3N109

Part Number:
FDFMA3N109
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3813702-FDFMA3N109
Description:
MOSFET N-CH 30V 2.9A MICRO2X2
ECAD Model:
Datasheet:
FDFMA3N109

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Specifications
Fairchild/ON Semiconductor FDFMA3N109 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDFMA3N109.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-VDFN Exposed Pad
  • Number of Pins
    6
  • Weight
    60mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    123MOhm
  • Terminal Finish
    Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Current Rating
    2.9A
  • Number of Elements
    1
  • Power Dissipation-Max
    1.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.5W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    123m Ω @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    220pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    2.9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    3nC @ 4.5V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    2.9A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    30V
  • FET Feature
    Schottky Diode (Isolated)
  • Feedback Cap-Max (Crss)
    30 pF
  • Height
    750μm
  • Length
    2mm
  • Width
    2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDFMA3N109 Description
The FDFMA3N109 is a single-package solution for boosting topologies in cellular handsets and other ultra-portable applications. To improve boost efficiency, it includes a MOSFET with low input capacitance, total gate charge, and on-state resistance, as well as an independently linked Schottky diode with low forward voltage and reverse leakage current. The MicroFET 2x2 package has excellent thermal performance for its physical size, making it ideal for switching and linear mode applications.

FDFMA3N109 Features
2.9 A, 30 V
RDS(ON) = 123 mΩ @ VGS = 4.5 V
RDS(ON) = 140 mΩ @ VGS = 3.0 V
RDS(ON) = 163 mΩ @ VGS = 2.5
VF < 0.46 V @ 500mA
Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm
HBM ESD protection level = 1.8kV typical (Note 3)
RoHS Compliant

FDFMA3N109 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FDFMA3N109 More Descriptions
Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ
MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Product Comparison
The three parts on the right have similar specifications to FDFMA3N109.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    FET Feature
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-609 Code
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Drain Current-Max (Abs) (ID)
    View Compare
  • FDFMA3N109
    FDFMA3N109
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    16 Weeks
    Surface Mount
    Surface Mount
    6-VDFN Exposed Pad
    6
    60mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    123MOhm
    Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    2.9A
    1
    1.5W Ta
    Single
    ENHANCEMENT MODE
    1.5W
    DRAIN
    6 ns
    N-Channel
    SWITCHING
    123m Ω @ 2.9A, 4.5V
    1.5V @ 250μA
    220pF @ 15V
    2.9A Tc
    3nC @ 4.5V
    8ns
    2.5V 4.5V
    ±12V
    8 ns
    12 ns
    2.9A
    1V
    12V
    30V
    Schottky Diode (Isolated)
    30 pF
    750μm
    2mm
    2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • FDFM2P110
    FDFM2P110
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    16 Weeks
    Surface Mount
    Surface Mount
    6-WDFN Exposed Pad
    6
    9mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    140MOhm
    Nickel/Palladium (Ni/Pd)
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    -3.5A
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    2W
    -
    8 ns
    P-Channel
    SWITCHING
    140m Ω @ 3.5A, 4.5V
    1.5V @ 250μA
    280pF @ 10V
    3.5A Ta
    4nC @ 4.5V
    12ns
    2.5V 4.5V
    ±12V
    3.2 ns
    11 ns
    3.5A
    -
    12V
    -20V
    Schottky Diode (Isolated)
    -
    750μm
    3mm
    3mm
    -
    No
    ROHS3 Compliant
    Lead Free
    e4
    MO-229WEEA
    20V
    -
    FDFMA3N109 vs FDFM2P110
  • FDFMA2P029Z
    FDFMA2P029Z
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    16 Weeks
    Surface Mount
    Surface Mount
    6-VDFN Exposed Pad
    6
    40mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    95MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    -3.1A
    1
    1.4W Tj
    Single
    ENHANCEMENT MODE
    1.4W
    DRAIN
    13 ns
    P-Channel
    SWITCHING
    95m Ω @ 3.1A, 4.5V
    1.5V @ 250μA
    720pF @ 10V
    3.1A Ta
    10nC @ 4.5V
    11ns
    2.5V 4.5V
    ±12V
    11 ns
    37 ns
    -3.1A
    -
    12V
    20V
    Schottky Diode (Isolated)
    -
    750μm
    2mm
    2mm
    -
    No
    ROHS3 Compliant
    Lead Free
    e4
    MO-229VCCC
    -
    -
    FDFMA3N109 vs FDFMA2P029Z
  • FDFM2N111
    FDFM2N111
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    16 Weeks
    Surface Mount
    Surface Mount
    6-WDFN Exposed Pad
    6
    165.33333mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    20V
    MOSFET (Metal Oxide)
    DUAL
    4A
    1
    1.7W Ta
    Single
    ENHANCEMENT MODE
    1.7W
    -
    6 ns
    N-Channel
    SWITCHING
    100m Ω @ 4A, 4.5V
    1.5V @ 250μA
    273pF @ 10V
    4A Ta
    3.8nC @ 4.5V
    7ns
    2.5V 4.5V
    ±12V
    7 ns
    11 ns
    4A
    -
    12V
    20V
    Schottky Diode (Isolated)
    -
    750μm
    3mm
    3mm
    -
    No
    ROHS3 Compliant
    Lead Free
    e4
    -
    2V
    4A
    FDFMA3N109 vs FDFM2N111
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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