Fairchild/ON Semiconductor FDD5810

Name: FDD5810
Brand: Fairchild/ON Semiconductor
SKU: 3586680-FDD5810
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD5810

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3586680-FDD5810

Description:: MOSFET N-CH 60V 37A DPAK

ECAD Model:

Datasheet:: FDD5810

Specifications

Fairchild/ON Semiconductor FDD5810 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD5810.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
72W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 32A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.89pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.4A Ta 37A Tc
Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
7.7A
Drain-source On Resistance-Max
0.027Ohm
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
45 mJ
RoHS Status
ROHS3 Compliant

Description

FDD5810 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.89pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [7.7A] according to its drain current.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

FDD5810 Features
the avalanche energy rating (Eas) is 45 mJ
a 60V drain to source voltage (Vdss)

FDD5810 Applications
There are a lot of Rochester Electronics, LLC
FDD5810 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

FDD5810 More Descriptions

TRANS MOSFET N-CH 60V 7.7A 3PIN DPAK - Bulk
MOSFET N-CH 60V 7.4A/37A DPAK
N-CHANNEL POWER MOSFET
OEMs, CMs ONLY (NO BROKERS)
MOSFETs LOW_VOLTAGE
MISCELLANEOUS MOSFETS;
MOSFET LOW VOLTAGE
Contact for details
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:7.4A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):43mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.6V; Power Dissipation, Pd:72W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to FDD5810.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Series

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

Lead Free

Supplier Device Package

View Compare
FDD5810

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

72W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

22m Ω @ 32A, 10V

2V @ 250μA

1.89pF @ 25V

7.4A Ta 37A Tc

34nC @ 10V

60V

5V 10V

±20V

TO-252AA

7.7A

0.027Ohm

60V

45 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDD5680

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

2

Tin (Sn)

MOSFET (Metal Oxide)

-

GULL WING

-

-

-

R-PSSO-G2

-

1

-

2.8W Ta 60W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

21m Ω @ 8.5A, 10V

4V @ 250μA

1835pF @ 30V

8.5A Ta

46nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 week ago)

8 Weeks

Surface Mount

3

260.37mg

PowerTrench®

EAR99

21mOhm

FET General Purpose Power

60V

38A

Single

60W

15 ns

9ns

16 ns

35 ns

8.5A

20V

60V

No

Lead Free

-

FDD5810 vs FDD5680
FDD5N50UTF_WS

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

40W Tc

-

-

N-Channel

-

2Ohm @ 1.5A, 10V

5V @ 250μA

650pF @ 25V

3A Tc

15nC @ 10V

500V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

FRFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D-Pak

FDD5810 vs FDD5N50UTF_WS
FDD5N50TF_WS

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

40W Tc

-

-

N-Channel

-

1.4Ohm @ 2A, 10V

5V @ 250μA

640pF @ 25V

4A Tc

15nC @ 10V

500V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

UniFET™

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D-Pak

FDD5810 vs FDD5N50TF_WS