Fairchild/ON Semiconductor FDD5670

Name: FDD5670
Brand: Fairchild/ON Semiconductor
SKU: 2482138-FDD5670
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD5670

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2482138-FDD5670

Description:: MOSFET N-CH 60V 52A D-PAK

ECAD Model:

Datasheet:: FDD5670

Specifications

Fairchild/ON Semiconductor FDD5670 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD5670.

Lifecycle Status
ACTIVE (Last Updated: 10 hours ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
52A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
3.8W Ta 83W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
83W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2739pF @ 15V
Current - Continuous Drain (Id) @ 25°C
52A Ta
Gate Charge (Qg) (Max) @ Vgs
73nC @ 10V
Rise Time
12ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
24 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
52A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
48A
Drain to Source Breakdown Voltage
60V
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDD5670 Description
FDD5670 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON), and fast switching speed. Extremely low RDS(ON) in a small package.

FDD5670 Features
Low gate charge
Fast switching
High-performance trench technology for extremely low RDS(ON)
52 A, 60 V

FDD5670 Applications
DC/DC converter
Motor drives

FDD5670 More Descriptions

N-Channel PowerTrench® MOSFET, 60V, 52A, 15mΩ
Power Field-Effect Transistor, 21A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. extremely low RDS(ON) in a small package.

Product Comparison

The three parts on the right have similar specifications to FDD5670.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDD5670

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 10 hours ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2011

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

52A

R-PSSO-G2

1

3.8W Ta 83W Tc

Single

ENHANCEMENT MODE

83W

DRAIN

20 ns

N-Channel

SWITCHING

15m Ω @ 10A, 10V

4V @ 250μA

2739pF @ 15V

52A Ta

73nC @ 10V

12ns

6V 10V

±20V

24 ns

60 ns

52A

2.5V

20V

48A

60V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDD5N50FTF_WS

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

40W Tc

-

-

-

-

-

N-Channel

-

1.55Ohm @ 1.75A, 10V

5V @ 250μA

650pF @ 25V

3.5A Tc

15nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D-Pak

500V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDD5670 vs FDD5N50FTF_WS
FDD5N53TM_WS

Fairchild/ON Semiconductor

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

-

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

1

40W Tc

Single

-

40W

-

-

N-Channel

-

1.5 Ω @ 2A, 10V

5V @ 250μA

640pF @ 25V

4A Tc

15nC @ 10V

22ns

10V

±30V

20 ns

28 ns

4A

-

30V

-

530V

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDD5670 vs FDD5N53TM_WS
FDD5N50UTM_WS

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

5V @ 250µA

±30V

MOSFET (Metal Oxide)

D-Pak

FRFET®

2 Ohm @ 1.5A, 10V

40W (Tc)

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 150°C (TJ)

Surface Mount

650pF @ 25V

15nC @ 10V

N-Channel

-

10V

500V

3A (Tc)

FDD5670 vs FDD5N50UTM_WS

Certification

Related parts for FDD5670

FDD5810

Fairchild/ON Semiconductor

MOSFET N-CH 60V 37A DPAK
FDD5N50NZTM

Fairchild/ON Semiconductor

MOSFET N-CH 500V DPAK
FDD5612

Fairchild/ON Semiconductor

MOSFET N-CH 60V 5.4A DPAK
FDD5680

Fairchild/ON Semiconductor

MOSFET N-CH 60V 8.5A D-PAK
FDD5N50FTF_WS

Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.5A DPAK
FDD5N50UTF_WS

Fairchild/ON Semiconductor

MOSFET N-CH 500V 3A DPAK
FDD5N50TF_WS

Fairchild/ON Semiconductor

MOSFET N-CH 500V 4A DPAK
FDD5N53TM_WS

Fairchild/ON Semiconductor

MOSFET N-CH 530V 4A DPAK
FDD5N50UTM_WS

Fairchild/ON Semiconductor

MOSFET N-CH 500V 3A DPAK
FDD5N50FTM_WS

Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.5A DPAK

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FDD5670 Specification

Part Number	Manufacturers	Description	Stock	Price
FDD5670 DISTI #V36:1790_06298613	ON Semiconductor	TO-252 DPAK NCH 60V	0	2500 $1.143
FDD5670 DISTI #FDD5670CT-ND	ON Semiconductor	MOSFET N-CH 60V 52A D-PAK RoHS: Compliant	2498	1 $2.16 10 $1.936 100 $1.5561 500 $1.27848 1000 $1.05931
FDD5670 DISTI #FDD5670DKR-ND	ON Semiconductor	MOSFET N-CH 60V 52A D-PAK RoHS: Compliant	2498	1 $2.16 10 $1.936 100 $1.5561 500 $1.27848 1000 $1.05931
FDD5670 DISTI #FDD5670TR-ND	ON Semiconductor	MOSFET N-CH 60V 52A D-PAK RoHS: Compliant	0	2500 $0.95752 5000 $0.92206
FDD5670 DISTI #FDD5670	ON Semiconductor	Trans MOSFET N-CH 60V 52A 3-Pin(2 Tab) TO-252AA T/ RoHS: Compliant	0	230 $1.39 460 $1.39 690 $1.29 1150 $1.29 2300 $1.29
FDD5670 DISTI #FDD5670	ON Semiconductor	Trans MOSFET N-CH 60V 52A 3-Pin(2 Tab) TO-252AA T/ RoHS: Compliant	0	2500 $1.0209 5000 $0.8509 10000 $0.7849 15000 $0.7289 25000 $0.6809
FDD5670 DISTI #FDD5670	ON Semiconductor	Trans MOSFET N-CH 60V 52A 3-Pin(2 Tab) TO-252AA T/ RoHS: Compliant	0	2500 $2.19 5000 $2.19 10000 $2.19 15000 $2.19 25000 $2.09
FDD5670 DISTI #512-FDD5670	ON Semiconductor	MOSFET 60V N-Ch PowerTrench RoHS: Compliant	970	1 $2.25 10 $1.91 100 $1.53 500 $1.34 1000 $1.11 2500 $1.03 5000 $0.997
FDD5670 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 21A I(D), 60V, 0.01 RoHS: Compliant	53231	1 $1.77 25 $1.64 100 $1.57 500 $1.51 1000 $1.43
FDD5670 DISTI #7599083P	ON Semiconductor	MOSFET N-CHANNEL 60V 52A TO252AA, RL	340	20 $1.055 40 $0.965 100 $0.905 200 $0.89
FDD5670 DISTI #	Fairchild Semiconductor Corporation	21 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFE	2740	1 $1.95 739 $0.7475 1339 $0.6825
FDD5670 DISTI #	N/A	21 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFE	188	1 $2.28 54 $1.254 121 $1.14
FDD5670 DISTI #	Fairchild Semiconductor Corporation	21 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFE	12557	1 $3.16 412 $1.3035 768 $1.185
FDD5670 DISTI #	Fairchild Semiconductor Corporation		747
FDD5670 DISTI #FDD5670	ON Semiconductor	Transistor: N-MOSFET, unipolar, 60V, 52A, 83W,	2426	1 $1.44 5 $1.24 25 $1 100 $0.9 500 $0.83

Fairchild/ON Semiconductor FDD5670

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