Fairchild/ON Semiconductor FDD5353

Name: FDD5353
Brand: Fairchild/ON Semiconductor
SKU: 2478178-FDD5353
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD5353

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478178-FDD5353

Description:: MOSFET N-CH 60V 11.5A DPAK

ECAD Model:

Datasheet:: FDD5353

Specifications

Fairchild/ON Semiconductor FDD5353 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD5353.

Lifecycle Status
ACTIVE (Last Updated: 8 hours ago)
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
12.3MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
3.1W Ta 69W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.1W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12.3m Ω @ 10.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3215pF @ 30V
Current - Continuous Drain (Id) @ 25°C
11.5A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs
65nC @ 10V
Rise Time
6ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
11.5A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
54A
Drain to Source Breakdown Voltage
60V
Nominal Vgs
1.8 V
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDD5353 Description
FDD5353 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the FDD5353 is -55°C~150°C TJ and its maximum power dissipation is 69W Tc. This N-Channel MOSFET is produced using an advanced Power Trench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

FDD5353 Features
Max rDS(on) = 12.3mΩ at VGS = 10V, ID = 10.7A
Max rDS(on) = 15.4mΩat VGS= 4.5V, ID = 9.5A
100% UIL Tested
RoHS Compliant

FDD5353 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDD5353 More Descriptions

N-Channel 60 V 12.3 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Power Trench® MOSFET, N-Channel, 60V, 50A, 12.3mΩ
Power Field-Effect Transistor, 11.5A I(D), 60V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0101ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:69W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

Product Comparison

The three parts on the right have similar specifications to FDD5353.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Form

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Termination

Voltage - Rated DC

Current Rating

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
FDD5353

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 8 hours ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2007

e3

yes

Active

1 (Unlimited)

2

EAR99

12.3MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

R-PSSO-G2

1

3.1W Ta 69W Tc

Single

ENHANCEMENT MODE

3.1W

DRAIN

11 ns

N-Channel

SWITCHING

12.3m Ω @ 10.7A, 10V

3V @ 250μA

3215pF @ 30V

11.5A Ta 50A Tc

65nC @ 10V

6ns

4.5V 10V

±20V

4 ns

36 ns

11.5A

1.8V

20V

54A

60V

1.8 V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDD5612

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 9 hours ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2016

e3

yes

Active

1 (Unlimited)

2

EAR99

64MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

R-PSSO-G2

1

3.8W Ta 42W Tc

Single

ENHANCEMENT MODE

42W

DRAIN

8 ns

N-Channel

SWITCHING

55m Ω @ 5.4A, 10V

3V @ 250μA

660pF @ 30V

5.4A Ta

11nC @ 10V

4ns

6V 10V

±20V

4 ns

24 ns

18A

2.4V

20V

-

60V

2.4 V

2.39mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

SMD/SMT

60V

18A

60V

90 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDD5353 vs FDD5612
FDD5680

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

2

EAR99

21mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

R-PSSO-G2

1

2.8W Ta 60W Tc

Single

ENHANCEMENT MODE

60W

DRAIN

15 ns

N-Channel

SWITCHING

21m Ω @ 8.5A, 10V

4V @ 250μA

1835pF @ 30V

8.5A Ta

46nC @ 10V

9ns

6V 10V

±20V

16 ns

35 ns

8.5A

-

20V

-

60V

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

60V

38A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDD5353 vs FDD5680
FDD5N50UTM_WS

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

5V @ 250µA

±30V

MOSFET (Metal Oxide)

D-Pak

FRFET®

2 Ohm @ 1.5A, 10V

40W (Tc)

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 150°C (TJ)

Surface Mount

650pF @ 25V

15nC @ 10V

N-Channel

-

10V

500V

3A (Tc)

FDD5353 vs FDD5N50UTM_WS