Fairchild/ON Semiconductor FDD4243
- Part Number:
- FDD4243
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3070073-FDD4243
- Description:
- MOSFET P-CH 40V 6.7A DPAK
- Datasheet:
- FDD4243
Fairchild/ON Semiconductor FDD4243 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD4243.
- Lifecycle StatusACTIVE (Last Updated: 6 hours ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight260.37mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance44MOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating-14A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-XSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max42W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation42W
- Turn On Delay Time6 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs44m Ω @ 6.7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1550pF @ 20V
- Current - Continuous Drain (Id) @ 25°C6.7A Ta 14A Tc
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Rise Time15ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)-6.7A
- Threshold Voltage-1.6V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-40V
- Pulsed Drain Current-Max (IDM)60A
- Dual Supply Voltage-40V
- Avalanche Energy Rating (Eas)84 mJ
- Nominal Vgs-1.6 V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDD4243 Description
The ON Semiconductor FDD4243 P-Channel MOSFET was designed with a proprietary PowerTrenchTM technology to deliver reduced RDS(on) and optimized Bvdss capabilities for enhanced application performance.
FDD4243 Features
High-performance trench technology for extremely low rDS(on)
Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A
Max rDS(on) = 64mΩ at VGS = 4.5V, ID = 5.5A
RoHS compliant
FDD4243 Applications
Inverter
Power Supplies
The ON Semiconductor FDD4243 P-Channel MOSFET was designed with a proprietary PowerTrenchTM technology to deliver reduced RDS(on) and optimized Bvdss capabilities for enhanced application performance.
FDD4243 Features
High-performance trench technology for extremely low rDS(on)
Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A
Max rDS(on) = 64mΩ at VGS = 4.5V, ID = 5.5A
RoHS compliant
FDD4243 Applications
Inverter
Power Supplies
FDD4243 More Descriptions
P-Channel owerTrench® MOSFET, -40V, -14A, 44mΩ
Trans MOSFET P-CH Si 40V 6.7A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 40V 6.7A DPAK
P-Channel 40 V 44 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -14 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42
Trans MOSFET P-CH Si 40V 6.7A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 40V 6.7A DPAK
P-Channel 40 V 44 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Power Field-Effect Transistor, 6.7A I(D), 40V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -14 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 42
The three parts on the right have similar specifications to FDD4243.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageContact PlatingNumber of ChannelsCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Max Junction Temperature (Tj)Radiation HardeningBase Part NumberView Compare
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FDD4243ACTIVE (Last Updated: 6 hours ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e3yesActive1 (Unlimited)2SMD/SMTEAR9944MOhmTin (Sn)Other Transistors-40VMOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDnot_compliant-14ANOT SPECIFIEDR-XSSO-G2Not Qualified142W TcSingleENHANCEMENT MODE42W6 nsP-Channel44m Ω @ 6.7A, 10V3V @ 250μA1550pF @ 20V6.7A Ta 14A Tc29nC @ 10V15ns40V4.5V 10V±20V7 ns22 ns-6.7A-1.6V20V-40V60A-40V84 mJ-1.6 V2.39mm6.73mm6.22mmNo SVHCROHS3 CompliantLead Free-----------
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)PowerTrench®2004--Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)--------55W Tc----N-Channel36mOhm @ 25A, 10V3V @ 250μA880pF @ 25V5.2A Ta 25A Tc11nC @ 5V-60V5V 10V±20V----------------TO-252AA---------
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ACTIVE (Last Updated: 6 hours ago)10 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e3yesActive1 (Unlimited)2-EAR9912.3MOhm---MOSFET (Metal Oxide)GULL WING----R-PSSO-G2-12.4W Ta 69W TcSingleENHANCEMENT MODE2.4W10 nsP-Channel12.3m Ω @ 12.7A, 10V3V @ 250μA2775pF @ 20V10.8A Ta 50A Tc50nC @ 10V7ns40V4.5V 10V±20V15 ns38 ns10.8A-1.8V20V-40V----1.8 V2.517mm6.73mm6.22mmNo SVHCROHS3 CompliantLead Free-Tin1DRAINSWITCHINGTO-252AA50A150°CNo-
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ACTIVE (Last Updated: 7 hours ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633260.37mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e3yesActive1 (Unlimited)2SMD/SMTEAR9927MOhm-Other Transistors-40VMOSFET (Metal Oxide)GULL WING---8.4A-R-PSSO-G2-169W TcSingleENHANCEMENT MODE69W8 nsP-Channel27m Ω @ 8.4A, 10V3V @ 250μA2380pF @ 20V8.4A Ta 32A Tc27nC @ 5V15ns40V4.5V 10V±20V14 ns34 ns8.4mA-1.6V20V-40V--40V--1.6 V2.39mm6.73mm6.22mmNo SVHCROHS3 CompliantLead Free-Tin-DRAIN--40A-NoFDD4685
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