Fairchild/ON Semiconductor FDC6506P
- Part Number:
- FDC6506P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069669-FDC6506P
- Description:
- MOSFET 2P-CH 30V 1.8A SSOT6
- Datasheet:
- FDC6506P
Fairchild/ON Semiconductor FDC6506P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6506P.
- Package / CaseTSOP-6
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
FDC6506P Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDC6506P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDC6506P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDC6506P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDC6506P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDC6506P More Descriptions
Dual P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.8A, 170mΩ
Transistor MOSFET Array Dual P-CH 30V 1.8A 6-Pin TSOT-23 T/R
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Transistor MOSFET Array Dual P-CH 30V 1.8A 6-Pin TSOT-23 T/R
These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
The three parts on the right have similar specifications to FDC6506P.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusMounting TypeSupplier Device PackageOperating TemperatureSeriesPart StatusMoisture Sensitivity Level (MSL)Power - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)FET FeatureLifecycle StatusFactory Lead TimeMountNumber of PinsWeightTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET TechnologyMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeAdditional FeatureView Compare
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FDC6506PTSOP-6Tape & Reel (TR)RoHS Compliant------------------------------------------------------------
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6-SSOT Flat-lead, SuperSOT™-6 FLMPTape & Reel (TR)-Surface MountSuperSOT™-6-55°C~150°C TJPowerTrench®Obsolete1 (Unlimited)900mW2 P-Channel (Dual)44mOhm @ 5A, 4.5V1.5V @ 250μA992pF @ 10V5A14nC @ 4.5V20VLogic Level Gate--------------------------------------------
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SOT-23-6 Thin, TSOT-23-6Tape & Reel (TR)ROHS3 CompliantSurface Mount--55°C~150°C TJPowerTrench®Active1 (Unlimited)700mW2 P-Channel (Dual)90m Ω @ 2.5A, 4.5V1.5V @ 250μA455pF @ 6V2.5A8nC @ 4.5V-Logic Level GateACTIVE (Last Updated: 2 days ago)10 WeeksSurface Mount636mgSILICON2001e3yes6SMD/SMTEAR9990MOhmTin (Sn)Other Transistors-12V960mWGULL WING-2.5A22DualENHANCEMENT MODE960mW9 nsSWITCHING14ns14 ns21 ns-2.5A-700mV8V-12V12VMETAL-OXIDE SEMICONDUCTOR150°C700 mV1.1mm3mm1.7mmNo SVHCNoLead Free-
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SOT-23-6 Thin, TSOT-23-6Tape & Reel (TR)ROHS3 CompliantSurface Mount--55°C~150°C TJ-Active1 (Unlimited)700mW2 N-Channel (Dual)450m Ω @ 500mA, 4.5V1.5V @ 250μA50pF @ 10V-2.3nC @ 4.5V-Logic Level GateACTIVE (Last Updated: 1 day ago)10 WeeksSurface Mount636mgSILICON1997e3yes6SMD/SMTEAR99450mOhmTin (Sn)FET General Purpose Power25V900mWGULL WING680mA22DualENHANCEMENT MODE900mW3 nsSWITCHING8.5ns13 ns17 ns680mA800mV8V25V25VMETAL-OXIDE SEMICONDUCTOR150°C800 mV1.1mm3mm1.7mmNo SVHCNoLead FreeLOGIC LEVEL COMPATIBLE
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