Fairchild/ON Semiconductor FDC6420C

Name: FDC6420C
Brand: Fairchild/ON Semiconductor
SKU: 2473844-FDC6420C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDC6420C

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473844-FDC6420C

Description:: MOSFET N/P-CH 20V 3A/2.2A SSOT-6

ECAD Model:

Datasheet:: FDC6420C

Specifications

Fairchild/ON Semiconductor FDC6420C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6420C.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
70MOhm
Terminal Finish
TIN (SN)
Subcategory
Other Transistors
Max Power Dissipation
700mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
960mW
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
70m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
324pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3A 2.2A
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 4.5V
Rise Time
12ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
12 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
3A
Threshold Voltage
900mV
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
3A
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Nominal Vgs
900 mV
Height
900μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The ON SEMICONDUCTOR FDC6420C is a dual MOSFET array that provides high performance and reliability in a small package. This device features N and P channel MOSFETs with a maximum current rating of 3A, a maximum voltage rating of 20V, and a low on-resistance of 0.05 ohms. The FDC6420C also features a low gate threshold voltage of 4.5V and a low gate-source voltage of 900mV. This device is ideal for applications such as power management, motor control, and switching applications. The FDC6420C is available in a small, surface mount package, making it ideal for space-constrained applications.

FDC6420C More Descriptions

ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV
Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin SuperSOT T/R
Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Product Comparison

The three parts on the right have similar specifications to FDC6420C.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

FET Technology

Max Junction Temperature (Tj)

FET Feature

Nominal Vgs

Height

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Power - Max

Drain to Source Voltage (Vdss)

Contact Plating

Turn On Delay Time

Length

Width

Voltage - Rated DC

View Compare
FDC6420C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

36mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

6

SMD/SMT

EAR99

70MOhm

TIN (SN)

Other Transistors

700mW

GULL WING

260

3A

30

2

2

Dual

ENHANCEMENT MODE

960mW

N and P-Channel

SWITCHING

70m Ω @ 3A, 4.5V

1.5V @ 250μA

324pF @ 10V

3A 2.2A

4.6nC @ 4.5V

12ns

N-CHANNEL AND P-CHANNEL

12 ns

10 ns

3A

900mV

12V

3A

20V

20V

METAL-OXIDE SEMICONDUCTOR

150°C

Logic Level Gate

900 mV

900μm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
FDC6036P_F077

Fairchild/ON Semiconductor

-

-

-

Surface Mount

6-SSOT Flat-lead, SuperSOT™-6 FLMP

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2 P-Channel (Dual)

-

44mOhm @ 5A, 4.5V

1.5V @ 250μA

992pF @ 10V

5A

14nC @ 4.5V

-

-

-

-

-

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

-

-

-

SuperSOT™-6

900mW

20V

-

-

-

-

-

FDC6420C vs FDC6036P_F077
FDC6333C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

36mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

6

-

EAR99

95MOhm

-

Other Transistors

960mW

GULL WING

-

2.5A

-

2

2

Dual

ENHANCEMENT MODE

960mW

N and P-Channel

SWITCHING

95m Ω @ 2.5A, 10V

3V @ 250μA

282pF @ 15V

2.5A 2A

6.6nC @ 10V

13ns

N-CHANNEL AND P-CHANNEL

13 ns

11 ns

2.5A

1.8V

25V

-

-30V

-

METAL-OXIDE SEMICONDUCTOR

150°C

Logic Level Gate

1.8 V

1mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

700mW

30V

Tin

4.5 ns

3mm

1.7mm

-

FDC6420C vs FDC6333C
FDC6318P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

36mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2001

e3

yes

Active

1 (Unlimited)

6

SMD/SMT

EAR99

90MOhm

Tin (Sn)

Other Transistors

960mW

GULL WING

-

-2.5A

-

2

2

Dual

ENHANCEMENT MODE

960mW

2 P-Channel (Dual)

SWITCHING

90m Ω @ 2.5A, 4.5V

1.5V @ 250μA

455pF @ 6V

2.5A

8nC @ 4.5V

14ns

-

14 ns

21 ns

-2.5A

-700mV

8V

-

-12V

12V

METAL-OXIDE SEMICONDUCTOR

150°C

Logic Level Gate

700 mV

1.1mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

700mW

-

-

9 ns

3mm

1.7mm

-12V

FDC6420C vs FDC6318P